The methods for protecting InP surface against degradation during annealing,including encapsulant and encapsulant-free techniques;rapid thermal annealing of InP implanted layers;implanted ion species and some profiles...The methods for protecting InP surface against degradation during annealing,including encapsulant and encapsulant-free techniques;rapid thermal annealing of InP implanted layers;implanted ion species and some profiles of typical dopants,etc.,they are all the key techniques concerning ion implantation into semi-insulating InP,and have been reviewed synthetically as well.展开更多
The thermal boundary conductance of Al/SiO2, Al/Si, Au/SiO2, and Au/Si are measured by a femtosecond laser transient thermoreflectance technique. The distinct differences of the interfacial thermal conductance between...The thermal boundary conductance of Al/SiO2, Al/Si, Au/SiO2, and Au/Si are measured by a femtosecond laser transient thermoreflectance technique. The distinct differences of the interfacial thermal conductance between these samples are observed. For the same metal film, the thermal boundary conductance between metal and substrate decreases with the thermal conductivity of the substrate. The measured results are explained with the phonon diffusion mismatch model by introducing a phonon transmission coefficient across the interface.展开更多
There has not been an effective method to measure the resistivity of small-size sample of mineral and solid insulating material until now.According to the Chinese National Standard(GB/T1410-2006) and features of digit...There has not been an effective method to measure the resistivity of small-size sample of mineral and solid insulating material until now.According to the Chinese National Standard(GB/T1410-2006) and features of digital high resistance meter,a small electrode experimental installation was developed;it can work with current high resistance meter;the sample decreases to 18 mm from standard size 100 mm in diameter and reduces by 30.86 times in area.A three-electrode system is supported and precisely positioned by two insulating bases whose diameter is 60 mm and height is 20 mm,which ensures accuracy of device structure and reliability of measuring results.The key technological parameters are as follows:diameter of high voltage electrode is 18mm;diameter of measuring electrode is 14.6 mm;internal diameter and external diameter of guard electrode are 16 and 18 mm,respectively;the gap between guard electrode and measuring electrode is set at 0.6 mm.These parameters are adequate for the measurement of flat specimen of mineral and solid insulating material whose diameter is 18 mm.According to the confirmatory experiment on the volume resistivity and surface resistivity,the measuring results are almost the same,using a small electrode experimental installation and a standard electrode.展开更多
文摘The methods for protecting InP surface against degradation during annealing,including encapsulant and encapsulant-free techniques;rapid thermal annealing of InP implanted layers;implanted ion species and some profiles of typical dopants,etc.,they are all the key techniques concerning ion implantation into semi-insulating InP,and have been reviewed synthetically as well.
基金supported by the National Basic Research Program of China ("973" Project) (Grant No. 2011CB707605)the National Nature Science Foundation of China (Grant Nos. 50875047, 50776017, 50925519, 51106029)
文摘The thermal boundary conductance of Al/SiO2, Al/Si, Au/SiO2, and Au/Si are measured by a femtosecond laser transient thermoreflectance technique. The distinct differences of the interfacial thermal conductance between these samples are observed. For the same metal film, the thermal boundary conductance between metal and substrate decreases with the thermal conductivity of the substrate. The measured results are explained with the phonon diffusion mismatch model by introducing a phonon transmission coefficient across the interface.
基金supported by the National Natural Science Foundation of China (Grant No. 50974025)the National Key Technologies R & D Program of China (Grant No. 2004BA810B02)+2 种基金the Applied Foundation of Basic Research in Sichuan Province (Grant No. 07JY029-029)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20095122110015)the Scientific Research Foundation of the Education Ministry for Returned Chinese Scholars, China (Grant No. 2010-32)
文摘There has not been an effective method to measure the resistivity of small-size sample of mineral and solid insulating material until now.According to the Chinese National Standard(GB/T1410-2006) and features of digital high resistance meter,a small electrode experimental installation was developed;it can work with current high resistance meter;the sample decreases to 18 mm from standard size 100 mm in diameter and reduces by 30.86 times in area.A three-electrode system is supported and precisely positioned by two insulating bases whose diameter is 60 mm and height is 20 mm,which ensures accuracy of device structure and reliability of measuring results.The key technological parameters are as follows:diameter of high voltage electrode is 18mm;diameter of measuring electrode is 14.6 mm;internal diameter and external diameter of guard electrode are 16 and 18 mm,respectively;the gap between guard electrode and measuring electrode is set at 0.6 mm.These parameters are adequate for the measurement of flat specimen of mineral and solid insulating material whose diameter is 18 mm.According to the confirmatory experiment on the volume resistivity and surface resistivity,the measuring results are almost the same,using a small electrode experimental installation and a standard electrode.
