The peculiar photoconduction in semi insulating GaAs photoconductive switch being triggered by 1064nm laser pulse is reported.The gap between two electrodes of the switch is 4mm.When it is triggered by laser pulse wi...The peculiar photoconduction in semi insulating GaAs photoconductive switch being triggered by 1064nm laser pulse is reported.The gap between two electrodes of the switch is 4mm.When it is triggered by laser pulse with energy of 0 8mJ and the pulse width of 5ns,and operated at biased electric field of 2 0 and 6 0kV/cm,both linear and nonlinear modes of the switch are observed respectively.Whereas the biased electric field adds to 9 5kV/cm,and the triggered laser is in range of 0 5～1 0mJ,the peculiar performed characteristic is observed:the switch gives a linear waveform firstly,and then after a delay time of about 20～250ns,it outputs a nonlinear waveform again.The physical mechanism of this specific phenomenon is associated with the anti site defects of semi insulating GaAs and two step single photon absorption.The delay time between linear waveform and nonlinear waveform is calculated,and the result matches the experiments.展开更多
Effect of electrode insulation on the electric field and the flow field of the machining gap during electrochemical drilling（ECD） is numerically studied. Electric field simulation shows that the current density alon...Effect of electrode insulation on the electric field and the flow field of the machining gap during electrochemical drilling（ECD） is numerically studied. Electric field simulation shows that the current density along the side gap decreases with increasing the thickness of electrode insulation. And the analysis of the electrolyte flow in the frontal gap shows that the insulation thickness has a remarkable influence on the pressure distributions. Ex- periments investigate the influence of the insulation thickness on the main characteristics of the machined hole, i.e. , radial overcut, entrance conicity, and current stability. The poor hole is observed and identified as most likely to occur with a combination of the low tool feed rate and the low insulation thickness. The appropriate thickness of the insulating layer leads to an improvement on hole accuracy and machining stability.展开更多
Both the ceramic and the composite insulators have their own advantages and disadvantages when compared with each other. It is a reasonable idea to combine their merits together to design a novel insulator. The key me...Both the ceramic and the composite insulators have their own advantages and disadvantages when compared with each other. It is a reasonable idea to combine their merits together to design a novel insulator. The key measure of the novel insulator suggested in this paper is to add an annular metal sheet coated with high temperature vulcanisation (HTV) silicone rubber (SIR) at the base of the traditional ceramic insulator cap. The HTVSIR covering on the exterior of the metal sheet can lengthen the creepage distance. The metal sheet can uniform the electric stress, reduce its maximum value and modify its direction on one insulator unit and acts as equalizing ring on an insulator string. The factors stated above are the main reasons why the novel insulator has better insulating performance, including lower leakage current and flashover voltage, especially under polluted conditions. Simultaneously, the novel insulator can overcome the disadvantages of the ordinary remedies which have been widely used to improve the performance of ceramic insulators against pollution. The experimental results obtained in the laboratory were in good agreement with the theoretical analysis and demonstrated the novel insulator's effectiveness.展开更多
A new tapered multimode interference （MMl）-based coherent lightwave combiner is reported. A comprehensive theoretical analysis of mode behaviors in the tapered MMI waveguide is presented, and the output characterist...A new tapered multimode interference （MMl）-based coherent lightwave combiner is reported. A comprehensive theoretical analysis of mode behaviors in the tapered MMI waveguide is presented, and the output characteristics of the tapered MMI combiners with various structures are demonstrated. The combiner is fabricated on a silicon-on-insulator （SO1） substrate. Due to its advantages of having no end-facet reflection,easy extension to a multi-port configuration, high tolerance for fabrication errors, and compact size, the tapered MMI is a good candidate for a coherent lightwave combiner to be used in large-scale photonic integrated circuits.展开更多
An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measu...An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.展开更多
Aim To analyze the transient speciality of nonlinear, anisotropic, AC+DC coupling electric field, and to compare the withstand voltage strength of different insulation structures. Methods The transient process o...Aim To analyze the transient speciality of nonlinear, anisotropic, AC+DC coupling electric field, and to compare the withstand voltage strength of different insulation structures. Methods The transient process of polarity reversal is analyzed, considering the anisotropic property of oil immersed press board, a new finite element model based on Galerkin method is presented and verified. The model developed is applied to calculate the electric field distribution in four typical winding end structures of the converter transformer. Results\ The whole ring structure possesses the best insulation characteristics. Conclusion\ By introducing reasonable insulation components, insulation strength with the same surrounding sizes can be improved more than 30%.展开更多
A mode for the periodicity and weakening surge in semi-insulating GaAs photoconductive semiconductor switches is proposed based on the transferred-electron effect. It is shown that the periodicity and weakening surge ...A mode for the periodicity and weakening surge in semi-insulating GaAs photoconductive semiconductor switches is proposed based on the transferred-electron effect. It is shown that the periodicity and weakening surge is caused by the interaction between the self-excitation of the resonant circuit and transferred electron oscillation of the switch. The bias electric field （larger than Gunn threshold） across the switch is modulated by the AC elec-tric field,when the instantaneous bias electric field E is swinging below Gunn electric field threshold ET but grea-ter than the sustaining field Es （the minimum electric field required to support the domain） at the time of the do-main reaching the anode, and then the delayed-dipole domain mode of switch is obtained. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length prod-uct of 10^12 cm^-2,and the semi-insulating GaAs photoconductive semiconductor switch is essentially a type of pho-ton-activated charge domain device.展开更多
Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experim...Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.展开更多
Modeling analysis of thin fully depleted SOICMOS technology has been done. Using ISETCAD software,the high temperature characteristics of an SOICMOS transistor were simulated in the temperature range of from 300 to 60...Modeling analysis of thin fully depleted SOICMOS technology has been done. Using ISETCAD software,the high temperature characteristics of an SOICMOS transistor were simulated in the temperature range of from 300 to 600K, and the whole circuit of a laser range finder was simulated with Verilog software. By wafer pro- cessing,a circuit of a laser range finder with complete function and parameters working at high temperatures has been developed. The simulated results agree with the test results. The test of the circuit function and parameters at normal and high temperature shows the realization of an SOICMOS integrated circuit with low power dissipation and high speed, which can be applied in laser range finding. By manufacturing this device, further study on high temperature characteristics of shorter channel SOICMOS integrated circuits can be conducted.展开更多
Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect,current-voltage ( I-V ),photoluminescence spectroscopy (PL) and photocurrent spectroscopy(PC)measurem...Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect,current-voltage ( I-V ),photoluminescence spectroscopy (PL) and photocurrent spectroscopy(PC)measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration.Fe doping concentration also influences optical properties and defective formation in as-grown SI InP.Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PL and PC.展开更多
Semi insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930℃ for 80h.The annealing ambient can be pure phosphorus (PP) or iron ...Semi insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930℃ for 80h.The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP).The IP SI InP wafers have good electrical parameters and uniformity of whole wafer.However,PP SI InP wafers exhibit poor uniformity and electrical parameters.Photoluminescence which is subtle to deep defect appears in IP annealed semi insulating InP.Traps in annealed SI InP are detected by the spectroscopy of photo induced current transient.The results indicate that there are fewer traps in IP annealed undoped SI InP than those in as grown Fe doped and PP undoped SI InP.The formation mechanism of deep defects in annealed undoped InP is discussed.展开更多
An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 l...An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.展开更多
The fabrication of Bragg gratings on silicon-on-insulator （SOI） rib waveguides using electron-beam lithography is presented. The grating waveguide is optimally designed for actual photonic integration. Experimental ...The fabrication of Bragg gratings on silicon-on-insulator （SOI） rib waveguides using electron-beam lithography is presented. The grating waveguide is optimally designed for actual photonic integration. Experimental and theoretical evaluations of the Bragg grating are demonstrated. By thinning the SOl device layer and deeply etching the Bragg grating, a large grating coupling coefficient of 30cm^-1 is obtained.展开更多
The free electron concentration of as-grown liquid encapsulated Czochralski (LE C) InP measured by Hall effect is much higher than the concentration of net dono r impurity determined by glow discharge mass spectroscop...The free electron concentration of as-grown liquid encapsulated Czochralski (LE C) InP measured by Hall effect is much higher than the concentration of net dono r impurity determined by glow discharge mass spectroscopy.Evidence of the existe nce of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-do ped InP materials can be obseved with infrared absorption spectra.The concentra tion increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe concentration in Fe-doped semi-insulating (S I) InP.These results indicate that the hydrogen-indium vacancy complex is an im portant donor defect in as-grown LEC InP,and that it has significant influence on the compensation in Fe-doped SI InP展开更多
Gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) with a 1.55mm gap spacing trigged by 1553nm femtosecond fiber laser pulse is presented.The switches are biased with 3.33～10.3kV/cm and irrad...Gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) with a 1.55mm gap spacing trigged by 1553nm femtosecond fiber laser pulse is presented.The switches are biased with 3.33～10.3kV/cm and irradiated by femtosecond fiber laser operated at a wavelength of 1553nm with pulse width of 200fs and pulse energy of 0.2nJ.The experiments show that,even if the semi-insulating GaAs photoconductive switch operates under the electrical field of 10.3kV/cm,it will be still linear response,and a clear corresponding output electric pulse with the peak voltage of 0.8mV is captured.From the weak photoconductivity on laser intensity,photoabsorption mediated by EL2 deep level defects is suggested,as the primary process for the photoconductivity.展开更多
A novel planar DGDT FDSOI nMOSFET is presented, and the operation mechanism is discussed. The device fabrication processes and characteristics are simulated with Tsuprem 4 and Medici. The back-gate n-well is formed by...A novel planar DGDT FDSOI nMOSFET is presented, and the operation mechanism is discussed. The device fabrication processes and characteristics are simulated with Tsuprem 4 and Medici. The back-gate n-well is formed by implantation of phosphorus at a dosage of 3 × 10^13 cm^-2 and an energy of 250keV and connected directly to a front-gate n^＋ polysilicon. This method is completely compatible with the conventional bulk silicon process. Simulation results show that a DGDT FDSOI nMOSFET not only retains the advantages of a conventional FDSOI nMOSFET over a partially depleted （PD） SOI nMOSFET--that is the avoidance of anomalous subthreshold slope and kink effects but also shows a better drivability than a conventional FDSOI nMOSFET.展开更多
文摘The peculiar photoconduction in semi insulating GaAs photoconductive switch being triggered by 1064nm laser pulse is reported.The gap between two electrodes of the switch is 4mm.When it is triggered by laser pulse with energy of 0 8mJ and the pulse width of 5ns,and operated at biased electric field of 2 0 and 6 0kV/cm,both linear and nonlinear modes of the switch are observed respectively.Whereas the biased electric field adds to 9 5kV/cm,and the triggered laser is in range of 0 5～1 0mJ,the peculiar performed characteristic is observed:the switch gives a linear waveform firstly,and then after a delay time of about 20～250ns,it outputs a nonlinear waveform again.The physical mechanism of this specific phenomenon is associated with the anti site defects of semi insulating GaAs and two step single photon absorption.The delay time between linear waveform and nonlinear waveform is calculated,and the result matches the experiments.
基金Supported by the National Natural Science Foundation of China(50635040)the National High Technology Research and Development Program of China("863"Program)(2006AA04Z321)the Natural Science Foundation of Jiangsu Province(BK2008043)~~
文摘Effect of electrode insulation on the electric field and the flow field of the machining gap during electrochemical drilling（ECD） is numerically studied. Electric field simulation shows that the current density along the side gap decreases with increasing the thickness of electrode insulation. And the analysis of the electrolyte flow in the frontal gap shows that the insulation thickness has a remarkable influence on the pressure distributions. Ex- periments investigate the influence of the insulation thickness on the main characteristics of the machined hole, i.e. , radial overcut, entrance conicity, and current stability. The poor hole is observed and identified as most likely to occur with a combination of the low tool feed rate and the low insulation thickness. The appropriate thickness of the insulating layer leads to an improvement on hole accuracy and machining stability.
文摘Both the ceramic and the composite insulators have their own advantages and disadvantages when compared with each other. It is a reasonable idea to combine their merits together to design a novel insulator. The key measure of the novel insulator suggested in this paper is to add an annular metal sheet coated with high temperature vulcanisation (HTV) silicone rubber (SIR) at the base of the traditional ceramic insulator cap. The HTVSIR covering on the exterior of the metal sheet can lengthen the creepage distance. The metal sheet can uniform the electric stress, reduce its maximum value and modify its direction on one insulator unit and acts as equalizing ring on an insulator string. The factors stated above are the main reasons why the novel insulator has better insulating performance, including lower leakage current and flashover voltage, especially under polluted conditions. Simultaneously, the novel insulator can overcome the disadvantages of the ordinary remedies which have been widely used to improve the performance of ceramic insulators against pollution. The experimental results obtained in the laboratory were in good agreement with the theoretical analysis and demonstrated the novel insulator's effectiveness.
文摘A new tapered multimode interference （MMl）-based coherent lightwave combiner is reported. A comprehensive theoretical analysis of mode behaviors in the tapered MMI waveguide is presented, and the output characteristics of the tapered MMI combiners with various structures are demonstrated. The combiner is fabricated on a silicon-on-insulator （SO1） substrate. Due to its advantages of having no end-facet reflection,easy extension to a multi-port configuration, high tolerance for fabrication errors, and compact size, the tapered MMI is a good candidate for a coherent lightwave combiner to be used in large-scale photonic integrated circuits.
文摘An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.
文摘Aim To analyze the transient speciality of nonlinear, anisotropic, AC+DC coupling electric field, and to compare the withstand voltage strength of different insulation structures. Methods The transient process of polarity reversal is analyzed, considering the anisotropic property of oil immersed press board, a new finite element model based on Galerkin method is presented and verified. The model developed is applied to calculate the electric field distribution in four typical winding end structures of the converter transformer. Results\ The whole ring structure possesses the best insulation characteristics. Conclusion\ By introducing reasonable insulation components, insulation strength with the same surrounding sizes can be improved more than 30%.
文摘A mode for the periodicity and weakening surge in semi-insulating GaAs photoconductive semiconductor switches is proposed based on the transferred-electron effect. It is shown that the periodicity and weakening surge is caused by the interaction between the self-excitation of the resonant circuit and transferred electron oscillation of the switch. The bias electric field （larger than Gunn threshold） across the switch is modulated by the AC elec-tric field,when the instantaneous bias electric field E is swinging below Gunn electric field threshold ET but grea-ter than the sustaining field Es （the minimum electric field required to support the domain） at the time of the do-main reaching the anode, and then the delayed-dipole domain mode of switch is obtained. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length prod-uct of 10^12 cm^-2,and the semi-insulating GaAs photoconductive semiconductor switch is essentially a type of pho-ton-activated charge domain device.
文摘Two kinds of thin-film SOI high voltage MOSFETs are developed.One is general structure,the other is novel two-drift-region structure.The gate width is 760μm,and the active area is 8.58×10 -2 mm 2.The experiments show that the breakdown voltages of the two-drift-region and general structures are 26V and 17V,respectively,and the on resistances are 65Ω and 80Ω,respectively.
文摘Modeling analysis of thin fully depleted SOICMOS technology has been done. Using ISETCAD software,the high temperature characteristics of an SOICMOS transistor were simulated in the temperature range of from 300 to 600K, and the whole circuit of a laser range finder was simulated with Verilog software. By wafer pro- cessing,a circuit of a laser range finder with complete function and parameters working at high temperatures has been developed. The simulated results agree with the test results. The test of the circuit function and parameters at normal and high temperature shows the realization of an SOICMOS integrated circuit with low power dissipation and high speed, which can be applied in laser range finding. By manufacturing this device, further study on high temperature characteristics of shorter channel SOICMOS integrated circuits can be conducted.
文摘Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect,current-voltage ( I-V ),photoluminescence spectroscopy (PL) and photocurrent spectroscopy(PC)measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration.Fe doping concentration also influences optical properties and defective formation in as-grown SI InP.Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PL and PC.
文摘Semi insulating (SI) InP wafers of 50 and 75mm in diameter can be obtained by annealing of undoped liquid encapsulated Czochralski (LEC) InP at 930℃ for 80h.The annealing ambient can be pure phosphorus (PP) or iron phosphide (IP).The IP SI InP wafers have good electrical parameters and uniformity of whole wafer.However,PP SI InP wafers exhibit poor uniformity and electrical parameters.Photoluminescence which is subtle to deep defect appears in IP annealed semi insulating InP.Traps in annealed SI InP are detected by the spectroscopy of photo induced current transient.The results indicate that there are fewer traps in IP annealed undoped SI InP than those in as grown Fe doped and PP undoped SI InP.The formation mechanism of deep defects in annealed undoped InP is discussed.
文摘An organic thin-film transistor （OTFT） with an OTS/SiO2 bilayer gate insulator and a MoO3/AI electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine（CuPc） is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.
文摘The fabrication of Bragg gratings on silicon-on-insulator （SOI） rib waveguides using electron-beam lithography is presented. The grating waveguide is optimally designed for actual photonic integration. Experimental and theoretical evaluations of the Bragg grating are demonstrated. By thinning the SOl device layer and deeply etching the Bragg grating, a large grating coupling coefficient of 30cm^-1 is obtained.
文摘The free electron concentration of as-grown liquid encapsulated Czochralski (LE C) InP measured by Hall effect is much higher than the concentration of net dono r impurity determined by glow discharge mass spectroscopy.Evidence of the existe nce of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-do ped InP materials can be obseved with infrared absorption spectra.The concentra tion increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe concentration in Fe-doped semi-insulating (S I) InP.These results indicate that the hydrogen-indium vacancy complex is an im portant donor defect in as-grown LEC InP,and that it has significant influence on the compensation in Fe-doped SI InP
文摘Gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) with a 1.55mm gap spacing trigged by 1553nm femtosecond fiber laser pulse is presented.The switches are biased with 3.33～10.3kV/cm and irradiated by femtosecond fiber laser operated at a wavelength of 1553nm with pulse width of 200fs and pulse energy of 0.2nJ.The experiments show that,even if the semi-insulating GaAs photoconductive switch operates under the electrical field of 10.3kV/cm,it will be still linear response,and a clear corresponding output electric pulse with the peak voltage of 0.8mV is captured.From the weak photoconductivity on laser intensity,photoabsorption mediated by EL2 deep level defects is suggested,as the primary process for the photoconductivity.
文摘A novel planar DGDT FDSOI nMOSFET is presented, and the operation mechanism is discussed. The device fabrication processes and characteristics are simulated with Tsuprem 4 and Medici. The back-gate n-well is formed by implantation of phosphorus at a dosage of 3 × 10^13 cm^-2 and an energy of 250keV and connected directly to a front-gate n^＋ polysilicon. This method is completely compatible with the conventional bulk silicon process. Simulation results show that a DGDT FDSOI nMOSFET not only retains the advantages of a conventional FDSOI nMOSFET over a partially depleted （PD） SOI nMOSFET--that is the avoidance of anomalous subthreshold slope and kink effects but also shows a better drivability than a conventional FDSOI nMOSFET.
