基于Feng Y T提出的精确缩尺方法,即根据几何相似、静力相似、动力相似3个相似原理建立一套缩尺准则,使得缩尺前后模型的力学响应保持一致。首次将该理论应用于颗粒材料的流变分析当中,采用Burgers黏塑性蠕变模型,引入流变参数,在原缩...基于Feng Y T提出的精确缩尺方法,即根据几何相似、静力相似、动力相似3个相似原理建立一套缩尺准则,使得缩尺前后模型的力学响应保持一致。首次将该理论应用于颗粒材料的流变分析当中,采用Burgers黏塑性蠕变模型,引入流变参数,在原缩尺准则上进行理论推导,得到在二维和三维条件下的缩尺准则;其次在理论推导的基础上进行数值仿真验证。研究结果表明:严格按照拟定的缩尺准则选取参数后,缩尺后模型的力学响应能够保证和原尺寸模型完全一致,计算误差在3%以内,同时简要探讨了时间步长、黏性系数、颗粒数目、比尺数对数值试验的影响,为数值试验中相关参数的选取以及如何让数值模型反映材料真实的力学行为提供了有效参考。另外,由于缩尺模型采用与原模型相同的颗粒数目、颗粒形状、颗粒压实状态和比尺数,揭示了等比例缩尺对材料流变行为的影响。展开更多
With the decrease of the device size,soft error induced by various particles becomes a serious problem for advanced CMOS technologies.In this paper,we review the evolution of two main aspects of soft error-SEU and SET...With the decrease of the device size,soft error induced by various particles becomes a serious problem for advanced CMOS technologies.In this paper,we review the evolution of two main aspects of soft error-SEU and SET,including the new mechanisms to induced SEUs,the advances of the MCUs and some newly observed phenomena of the SETs.The mechanisms and the trends with downscaling of these issues are briefly discussed.We also review the hardening strategies for different types of soft errors from different perspective and present the challenges in testing,modeling and hardening assurance of soft error issues we have to address in the future.展开更多
文摘基于Feng Y T提出的精确缩尺方法,即根据几何相似、静力相似、动力相似3个相似原理建立一套缩尺准则,使得缩尺前后模型的力学响应保持一致。首次将该理论应用于颗粒材料的流变分析当中,采用Burgers黏塑性蠕变模型,引入流变参数,在原缩尺准则上进行理论推导,得到在二维和三维条件下的缩尺准则;其次在理论推导的基础上进行数值仿真验证。研究结果表明:严格按照拟定的缩尺准则选取参数后,缩尺后模型的力学响应能够保证和原尺寸模型完全一致,计算误差在3%以内,同时简要探讨了时间步长、黏性系数、颗粒数目、比尺数对数值试验的影响,为数值试验中相关参数的选取以及如何让数值模型反映材料真实的力学行为提供了有效参考。另外,由于缩尺模型采用与原模型相同的颗粒数目、颗粒形状、颗粒压实状态和比尺数,揭示了等比例缩尺对材料流变行为的影响。
基金supported by the National Natural Science Foundation of China(Grant No.11175138)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20100201110018)+1 种基金the Key Program of the National Natural Science Foundation of China(Grant No.11235008)the State Key Laboratory Program(Grant No.20140134)
文摘With the decrease of the device size,soft error induced by various particles becomes a serious problem for advanced CMOS technologies.In this paper,we review the evolution of two main aspects of soft error-SEU and SET,including the new mechanisms to induced SEUs,the advances of the MCUs and some newly observed phenomena of the SETs.The mechanisms and the trends with downscaling of these issues are briefly discussed.We also review the hardening strategies for different types of soft errors from different perspective and present the challenges in testing,modeling and hardening assurance of soft error issues we have to address in the future.