The electronic properties of sphalerite(110) surface with Zn-vacancy and S-vacancy were calculated by using density-functional theory,and the effects of vacancy defect on the copper activation of sphalerite were inves...The electronic properties of sphalerite(110) surface with Zn-vacancy and S-vacancy were calculated by using density-functional theory,and the effects of vacancy defect on the copper activation of sphalerite were investigated.The calculated results indicate that surface state occurs in the band gap of Zn-vacancy sphalerite,which is from the contribution of S 3p orbital at the first layer of the surface.The presence of S-vacancy results in surface state appearing near the Fermi level and the bottom of conductor band,which are composed of S 3p and Zn 4s orbital,respectively.The surface structure of Zn-vacancy sphalerite is more stable than S-vacancy surface due to the occupation of Zn-vacancy by Cu atoms;hence,the substitution reaction of Cu for Zn vacancy is easier than the substitution of Cu for Zn atoms with S-vacancy surface.展开更多
The effects of Mg doping(MgAl) and native N vacancy(VN) on the electronic structures and transport properties of Al N nanowire(Al NNW) were theoretically investigated by using density functional theory. Either the MgA...The effects of Mg doping(MgAl) and native N vacancy(VN) on the electronic structures and transport properties of Al N nanowire(Al NNW) were theoretically investigated by using density functional theory. Either the MgAl defect or the VN defect prefers to be formed on the Al NNW surfaces. Both MgAl and VN defects could increase the conductivity owing to introducing a defect band inside the band gap of Al N and split the Al N band gap into two subgaps. The defect concentration has little influence on the magnitude of the subgaps. The MgAl serves as a shallow acceptor rendering the nanowire a p-type conductor. The VN introduces a deep donor state enabling the nanowire an n-type conductor. The MgAl systems exhibit higher conductivity than the VN ones owing to the narrow subgaps of MgAl systems. The conductivity is roughly proportional to the defect concentration in the MgAl and VN defect systems. When the MgAl and VN coexist, the hole state of the MgAl defect and the electron state of the VN defect will compensate each other and their coupling state appears just above the valence-band maximum leading to a little decrease of the band gap compared with the pure Al NNW, which is unfavorable for the enhancing of the conductivity.展开更多
基金Project(50864001) supported by the National Natural Science Foundation of China
文摘The electronic properties of sphalerite(110) surface with Zn-vacancy and S-vacancy were calculated by using density-functional theory,and the effects of vacancy defect on the copper activation of sphalerite were investigated.The calculated results indicate that surface state occurs in the band gap of Zn-vacancy sphalerite,which is from the contribution of S 3p orbital at the first layer of the surface.The presence of S-vacancy results in surface state appearing near the Fermi level and the bottom of conductor band,which are composed of S 3p and Zn 4s orbital,respectively.The surface structure of Zn-vacancy sphalerite is more stable than S-vacancy surface due to the occupation of Zn-vacancy by Cu atoms;hence,the substitution reaction of Cu for Zn vacancy is easier than the substitution of Cu for Zn atoms with S-vacancy surface.
基金supported by the National Natural Science Foundation of China(Grant Nos.51073048,51473042)the Leaders in Academe of Har-bin City of China(Grant No.2013RFXXJ024)the Science Foundation for Backup Leader of Leading Talent Echelon in Heilongjiang Province
文摘The effects of Mg doping(MgAl) and native N vacancy(VN) on the electronic structures and transport properties of Al N nanowire(Al NNW) were theoretically investigated by using density functional theory. Either the MgAl defect or the VN defect prefers to be formed on the Al NNW surfaces. Both MgAl and VN defects could increase the conductivity owing to introducing a defect band inside the band gap of Al N and split the Al N band gap into two subgaps. The defect concentration has little influence on the magnitude of the subgaps. The MgAl serves as a shallow acceptor rendering the nanowire a p-type conductor. The VN introduces a deep donor state enabling the nanowire an n-type conductor. The MgAl systems exhibit higher conductivity than the VN ones owing to the narrow subgaps of MgAl systems. The conductivity is roughly proportional to the defect concentration in the MgAl and VN defect systems. When the MgAl and VN coexist, the hole state of the MgAl defect and the electron state of the VN defect will compensate each other and their coupling state appears just above the valence-band maximum leading to a little decrease of the band gap compared with the pure Al NNW, which is unfavorable for the enhancing of the conductivity.
