第11届半导体缺陷认知、成像与物理会议（11th International Conference on Defects-Recognition，Imaging and Physics in Semiconductors（DRIP XI））于2005年9月15-19日在北京举行，来自26个国家（地区）的共124位代表与会。会议...第11届半导体缺陷认知、成像与物理会议（11th International Conference on Defects-Recognition，Imaging and Physics in Semiconductors（DRIP XI））于2005年9月15-19日在北京举行，来自26个国家（地区）的共124位代表与会。会议由中国科学院半导体研究所和浙江大学共同主办，会议主席是中国科学院半导体研究所的王占国院士，会议程序委员会主席则是浙江大学硅材料国家重点实验室的杨德仁教授；会议国际指导委员会和会议国际程序委员会分别由著名学者JeanPierre Landesman、Piotr Edelman等16人和18人组成。展开更多
第20届"半导体缺陷"国际学术会议(ICDS-20,International Conference on Defects inSemiconductors)于1999年7月26～30日在美国伯克利市举行,共有300名代表参加。会议主席是著名学者E.E.Haller教授,会议程序委员会主席由N.Joh...第20届"半导体缺陷"国际学术会议(ICDS-20,International Conference on Defects inSemiconductors)于1999年7月26～30日在美国伯克利市举行,共有300名代表参加。会议主席是著名学者E.E.Haller教授,会议程序委员会主席由N.Johnson教授担任,会议成立了由K.Sumino,W.Jantsch等5人组成的国际指导委员会和15人左右的国际顾问委员会。本次会议录取论文324篇,其中口头报告104篇。展开更多
第8届半导体技术吸杂和缺陷工程会议((Gettering and defect engineering in semicon-ductor technology,GADEST’99)于1999年9月25日至28日在瑞典隆德市附近的赫尔(HOOR)举行。来自24个国家的百位科学家参加了会议,会议交流论文近百篇...第8届半导体技术吸杂和缺陷工程会议((Gettering and defect engineering in semicon-ductor technology,GADEST’99)于1999年9月25日至28日在瑞典隆德市附近的赫尔(HOOR)举行。来自24个国家的百位科学家参加了会议,会议交流论文近百篇,浙江大学一篇关于硅中氮杂质研究的论文在大会宣读。展开更多
We investigate the interaction of single-walled carbon nanotubes （SWCNTs） and methane molecule from the first principles. Adsorption energies are calculated, and methane affinities for the typical semiconducting and...We investigate the interaction of single-walled carbon nanotubes （SWCNTs） and methane molecule from the first principles. Adsorption energies are calculated, and methane affinities for the typical semiconducting and metallic nanotubes are compared. We also discuss role of the structural defects and nanotube curvature on the adsorption capability of the SWCNTs. We could observe larger adsorption energies for the metallic CNTs in comparison with the semiconducting CNTs. The obtained results for the zig zag nanotubes with various diameters reveal that the adsorption energy is higher for nanotubes with larger diameters. For defected tubes the adsorption energies are calculated for various configurations such as methane molecule approaching to the defect sites pentagon, hexagon, and heptagon in the tube surface. The results show that the introduce defects have an important contribution to the adsorption mechanism of the methane on SWNTs.展开更多
The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric func...The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials.展开更多
文摘第11届半导体缺陷认知、成像与物理会议（11th International Conference on Defects-Recognition，Imaging and Physics in Semiconductors（DRIP XI））于2005年9月15-19日在北京举行，来自26个国家（地区）的共124位代表与会。会议由中国科学院半导体研究所和浙江大学共同主办，会议主席是中国科学院半导体研究所的王占国院士，会议程序委员会主席则是浙江大学硅材料国家重点实验室的杨德仁教授；会议国际指导委员会和会议国际程序委员会分别由著名学者JeanPierre Landesman、Piotr Edelman等16人和18人组成。
文摘第20届"半导体缺陷"国际学术会议(ICDS-20,International Conference on Defects inSemiconductors)于1999年7月26～30日在美国伯克利市举行,共有300名代表参加。会议主席是著名学者E.E.Haller教授,会议程序委员会主席由N.Johnson教授担任,会议成立了由K.Sumino,W.Jantsch等5人组成的国际指导委员会和15人左右的国际顾问委员会。本次会议录取论文324篇,其中口头报告104篇。
文摘第8届半导体技术吸杂和缺陷工程会议((Gettering and defect engineering in semicon-ductor technology,GADEST’99)于1999年9月25日至28日在瑞典隆德市附近的赫尔(HOOR)举行。来自24个国家的百位科学家参加了会议,会议交流论文近百篇,浙江大学一篇关于硅中氮杂质研究的论文在大会宣读。
文摘We investigate the interaction of single-walled carbon nanotubes （SWCNTs） and methane molecule from the first principles. Adsorption energies are calculated, and methane affinities for the typical semiconducting and metallic nanotubes are compared. We also discuss role of the structural defects and nanotube curvature on the adsorption capability of the SWCNTs. We could observe larger adsorption energies for the metallic CNTs in comparison with the semiconducting CNTs. The obtained results for the zig zag nanotubes with various diameters reveal that the adsorption energy is higher for nanotubes with larger diameters. For defected tubes the adsorption energies are calculated for various configurations such as methane molecule approaching to the defect sites pentagon, hexagon, and heptagon in the tube surface. The results show that the introduce defects have an important contribution to the adsorption mechanism of the methane on SWNTs.
基金supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301900)the 973 project of the Ministry of Science and Technology of China (Grant No. 2011CBA00107)+4 种基金the Hi-tech Research Project (Grant No. 2011AA03A103)the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, 60936004, 61176063, 61071009, and 61027008)the Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20090091110040)the Natural Science of Foundation of Jiangsu province (Grant Nos. BK2011010, BK2010385, and BK2010178)the Fok Ying-Tong Education Foundation (Grant No. 122028)
文摘The dielectric functions of GaN for the temperature and frequency ranges of 10–300 K and 0.3–1 THz are obtained using terahertz time-domain spectroscopy.It is found that there are oscillations of the dielectric functions at various temperatures.Physically,the oscillation behavior is attributed to the resonance states of the point defects in the material.Furthermore,the dielectric functions are well fitted by the combination of the simple Drude model together with the classical damped oscillator model.According to the values of the fitting parameters,the concentration and electron lifetime of the point defects for various temperatures are determined,and the temperature dependences of them are in accordance with the previously reported result.Therefore,terahertz time-domain spectroscopy can be considered as a promising technique for investigating the relevant characteristics of the point defects in semiconductor materials.
