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ZnO肖特基势垒紫外探测器 被引量:11
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作者 高晖 邓宏 李燕 《发光学报》 EI CAS CSCD 北大核心 2005年第1期135-138,共4页
以p Si(111)为衬底,用水热法首次制得六棱微管ZnO。并以此为有源区利用平面磁控溅射技术沉积得到Ag叉指状电极,从而制作了Ag/n ZnO肖特基势垒结紫外探测器。对该紫外光探测器的暗电流和 365nm波长光照下的光电流、光响应和量子效率进行... 以p Si(111)为衬底,用水热法首次制得六棱微管ZnO。并以此为有源区利用平面磁控溅射技术沉积得到Ag叉指状电极,从而制作了Ag/n ZnO肖特基势垒结紫外探测器。对该紫外光探测器的暗电流和 365nm波长光照下的光电流、光响应和量子效率进行了测试。测试结果表明:Ag和ZnO六棱管间已形成肖特基接触,其有效势垒高度为 0. 35eV。无光照时,暗电流很小,当用λ=365nm的光照射Ag/n ZnO肖特基结时,在 5, 9V偏压时,光生电流分别为 25. 6, 57. 9μA。Ag/n ZnO紫外探测器有明显的光响应特性和较高的量子效率,在 366nm波长处,光响应度达到最大值 0. 161A/W,量子效率为 54. 7%。 展开更多
关键词 六棱微管ZnO 肖特基势垒结 紫外光探测器 I-V特性 光响应度 置子效率
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Inverted polymer solar cells with a solution-processed zinc oxide thin film as an electron collection layer 被引量:10
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作者 YANG TingBin QIN DongHuan +4 位作者 LAN LinFeng HUANG WenBo GONG Xiong PENG JunBiao CAO Yong 《Science China Chemistry》 SCIE EI CAS 2012年第5期755-759,共5页
A solution-processed zinc oxide (ZnO) thin film as an electron collection layer for polymer solar cells (PSCs) with an inverted device structure was investigated. Power conversion efficiencies (PCEs) of PSCs made with... A solution-processed zinc oxide (ZnO) thin film as an electron collection layer for polymer solar cells (PSCs) with an inverted device structure was investigated. Power conversion efficiencies (PCEs) of PSCs made with a blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) are 3.50% and 1.21% for PSCs with and without the ZnO thin film, respectively. Light intensity dependence of the photocurrent and the capacitance-voltage measurement demonstrate that the increased PCEs are due to the restriction of the strong bimolecular recombination in the interface when a thin ZnO layer is inserted between the polymer active layer and the ITO electrode. These results demonstrate that the ZnO thin film plays an important role in the performance of PSCs with an inverted device structure. 展开更多
关键词 polymer solar cells inverted device structure ZnO thin films
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Effect of annealing treatment on the performance of organic photovoltaic devices using SPFGraphene as electron-accepter material
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作者 WANG HaiTeng HE DaWei WANG YongSheng LIU ZhiYong WU HongPeng WANG JiGang ZHAO Yu 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第8期1356-1361,共6页
We have researched the performances of organic photovoltaic devices with the bulk heterojunction (BHJ) structure using the organic solution-processable functionalized graphene (SPFGraphene) material as the electro... We have researched the performances of organic photovoltaic devices with the bulk heterojunction (BHJ) structure using the organic solution-processable functionalized graphene (SPFGraphene) material as the electron-accepter material and P3OT as the donor material. The structural configuration of the device is ITO/PEDOT:PSS/P3OT:PCBM-SPFGraphene/LiF/A1. Given the P3OT/PCBM (1:1) mixture with 8wt% of SPFGraphene, the open-circuit voltage (Voc) of the device reaches 0.64 V, a short-circuit current density (J^c) reaches 5.7 mA/cm2, a fill factor (FF) reaches 0.42, and the power conversion efficiency (7?) reaches 1.53% at illumination at 100 mW/cm2 AM1.5. We further studied the reason for the device performances improvement In the P3OT:PCBM-SPFGraphene composite, the SPFGraphene material acts as exciton dissociation sites and provides the transport pathways of the lowest unoccupied molecular orbital (LUMO)-SPFGraphene-A1. Furthermore, adding SPFGraphene to P3OT results in appropriate energetic distance between the highest occupied molecular orbital (HOMO) and LUMO of the donoffacceptor and provides higher exciton dissociation volume mobility of carrier transport. We have researched the effect of annealing treatment for the devices and found that the devices with annealing treatment at 180℃ show better performances compared with devices without annealed treatment. The devices with annealed treatment show the best performance, with an enhancement of the power conversion efficiency from 1.53% to 1.75%. 展开更多
关键词 SPFGraphene P3OT HOMO LUMO
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