FB （floating-body） and BC （body-contact） partially depleted SOI nMOSFETs with HBC（half-back-channel） implantation are fabricated. Test results show that such devices have good performance in delaying the occurre...FB （floating-body） and BC （body-contact） partially depleted SOI nMOSFETs with HBC（half-back-channel） implantation are fabricated. Test results show that such devices have good performance in delaying the occurrence of the “kink” phenomenon and improving the breakdown voltage as compared to conventional PDSOI nMOS- FETs,while not decreasing the threshold voltage of the back gate obviously. Numerical simulation shows that a reduced electrical field in the drain contributes to the improvement of the breakdown voltage and a delay of the “kink” effect. A detailed analysis is given for the cause of such improvement of breakdown voltage and the delay of the “kink” effect.展开更多
文摘FB （floating-body） and BC （body-contact） partially depleted SOI nMOSFETs with HBC（half-back-channel） implantation are fabricated. Test results show that such devices have good performance in delaying the occurrence of the “kink” phenomenon and improving the breakdown voltage as compared to conventional PDSOI nMOS- FETs,while not decreasing the threshold voltage of the back gate obviously. Numerical simulation shows that a reduced electrical field in the drain contributes to the improvement of the breakdown voltage and a delay of the “kink” effect. A detailed analysis is given for the cause of such improvement of breakdown voltage and the delay of the “kink” effect.
