受限混合物溶剂中胶粒的耗尽势及吸附稳定性

基于密度泛函理论和Yvon-Born-Green方程得到了胶粒耗尽势的表达式.采用密度泛函理论计算了单壁附近和平行狭缝中的混合物溶剂中胶粒的耗尽势及其在单壁处的吸附稳定性.研究结果表明,不同溶剂组分的体积分数和粒子尺寸比等因素对胶粒耗尽势的强度、力程和周期均可产生显著影响,胶粒在单壁附近的吸附稳定性与溶剂粒子尺寸比和体积分数密切相关.此外,对受限于平行狭缝的胶体悬浮液,胶粒的耗尽势阱还可随粒子尺寸比和缝宽呈振荡趋势变化.

缔合流体中胶体粒子间耗尽势的密度泛函理论研究

基于与耗尽势相关的密度泛函理论,研究了缔合流体中胶体粒子间的耗尽势.通过计算不同条件下2个胶体粒子间的耗尽势,进一步分析了缔合流体中相关因素对耗尽势的影响.结果表明,溶剂分子的体相密度、胶体粒子与溶剂分子的尺寸比率、溶剂分子的官能度和缔合强度及胶体粒子与溶剂分子之间的弱相互作用等因素均可对胶体粒子间耗尽势产生显著影响.

硬核Yukawa流体中胶体粒子间的耗尽势

基于Roth、Evans和Dietrich有关耗尽势的密度泛函理论研究了硬核Yukawa(HCY)流体中胶体粒子间的耗尽势.在极稀溶液条件下,通过计算两个胶体粒子在不同条件下的耗尽势,分析了HCY流体的相关因素对耗尽势的影响.结果表明,胶体粒子与溶剂分子的尺寸比率、HCY流体分子间的相互作用、HCY流体分子的体相密度以及胶体粒子与流体分子之间的相互作用等因素均可对胶体粒子间耗尽势产生显著影响.研究结果可为实验上调控胶体粒子间的相互作用提供可能的线索.

A_aD_d型氢键流体的统计理论(Ⅳ):胶体粒子间的耗尽势

基于耗尽势的密度泛函理论研究了AaDd型氢键流体中胶体粒子间的耗尽势.针对胶体稀溶液,通过计算在不同条件下两个胶体粒子间的耗尽势和耗尽力,进一步分析了氢键流体中相关因素对二者的影响.结果表明,胶体粒子与流体分子的尺寸比率、氢键流体的体相密度、氢键键能、质子给体和受体数目以及胶体粒子与流体之间的弱相互作用等因素均可对胶体粒子间耗尽势产生显著影响.

Lennard-Jones流体中胶体粒子间耗尽势的密度泛函理论研究

基于Roth,Evans和Dietrich有关耗尽势的密度泛函理论研究了Lennard-Jones(L-J)流体中胶体粒子间的耗尽势.通过计算胶体稀溶液中两个胶体粒子在不同条件下的耗尽势,进一步分析了L-J流体的相关因素对耗尽势的影响.结果表明,L-J流体分子的体积分数、胶体粒子与溶剂分子的尺寸比率、L-J流体分子间的相互作用以及胶体粒子与流体分子之间的弱相互作用等因素均可对胶体粒子间耗尽势产生显著影响.研究结果可为实验上调控胶体粒子间的相互作用提供可能的线索.

An Analytical Threshold Voltage Model for Fully Depleted SOI MOSFETs

A new two-dimensional （2D） analytical model for the threshold-voltage of fully depleted SOI MOSFETs is derived. The 2D potential distribution functions in the active layer of the devices are obtained through solving the 2D Poisson＇s equation. The minimum of the potential at the oxide-Si layer interface is used to monitor the threshold voltage of the SOI MOSFETs. This model is verified by its excellent agreement with MEDICI simulation using SOI MOSFETs with different gate lengths,gate oxide thicknesses,silicon film thicknesses,and channel doping concentrations.

Threshold Voltage Model for a Fully Depleted SOI-MOSFET with a Non-Uniform Profile

A novel approximation of the two-dimensional （2D） potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation. The model agrees well with numerical simulation by MEDICI. The result represents a new way and some reference points in analyzing and controlling the threshold voltage of non-uniform fully depleted （FD） SOI devices in practice.

A Temperature-Dependent Model for Threshold Voltage and Potential Distribution of Fully Depleted SOI MOSFETs

A temperature-dependent model for threshold voltage and potential distribution of fully depleted silicon-on- insulator metal-oxide-semiconductor field-effect transistors is developed. The two-dimensional potential distribution function in the silicon thin film based on an approximate parabolic function has been applied to solve the two-dimensional Poisson＇s equation with suitable boundary conditions. The minimum of the surface potential is used to deduce the threshold voltage model. The model reveals the variations of potential distribution and threshold voltage with temperature, taking into account short-channel effects. Furthermore, the model is verified by the SILVACO ATLAS simulation. The calculations and the simulation agree well.