We differentiated the effects of Cu films deposited on single crystalline a-,r-,and c-plane sapphire substrates upon graphene films synthesized with atmospheric pressure chemical vapor deposition(CVD).The data illustr...We differentiated the effects of Cu films deposited on single crystalline a-,r-,and c-plane sapphire substrates upon graphene films synthesized with atmospheric pressure chemical vapor deposition(CVD).The data illustrate that the realization of high-crystalline Cu film is dependent not only on the crystallinity of underlying substrate,but also on the symmetric match of crystallographic geometry between metal film and substrate.We also systematically investigated the effects of PMMA removal on the Raman ID/IG and IG/I2D values of transferred graphene.The results reveal that different PMMA removal methods do not alter the ID/IG values;instead,the residue of PMMA increases the IG/I2D values and the thermal decomposition of PMMA leads to higher IG/I2D values than the removal of PMMA with acetone.The effects of PMMA removal on variations of the Raman spectra are also discussed.展开更多
Transfer printing of nanomaterials onto target substrates has been widely used in the fabrication of nanodevices, but it remains a challenge to fully avoid contamination introduced in the transfer process. Here we rep...Transfer printing of nanomaterials onto target substrates has been widely used in the fabrication of nanodevices, but it remains a challenge to fully avoid contamination introduced in the transfer process. Here we report a metal-film- assisted method to realize an ultra-clean transfer of single-walled carbon nanotubes （SWCNTs） mediated by poly（methyl methacrylate） （PMMA）. The amount of PMMA residue can be greatly reduced due to its strong physical adhesion to the metal film, leading to ultra-clean surfaces of both the SWCNTs and the substrates. This metal-film-assisted transfer method is efficient, nondestructive, and scalable. It is also suitable for the transfer of graphene and other nanostructures. Furthermore, the relatively low temperature employed allows this technique to be compatible with nanomaterial-based flexible electronics.展开更多
基金supported by the National Basic Research Program of China(2012CB215500)the National Natural Science Foundation of China(51272296)+1 种基金the Natural Science Foundation of Chongqing(CSTC2012jjA50014)Fundamental Research Funds for the Central Universities(CDJZR12225501,CQDXWL-2013-016)
文摘We differentiated the effects of Cu films deposited on single crystalline a-,r-,and c-plane sapphire substrates upon graphene films synthesized with atmospheric pressure chemical vapor deposition(CVD).The data illustrate that the realization of high-crystalline Cu film is dependent not only on the crystallinity of underlying substrate,but also on the symmetric match of crystallographic geometry between metal film and substrate.We also systematically investigated the effects of PMMA removal on the Raman ID/IG and IG/I2D values of transferred graphene.The results reveal that different PMMA removal methods do not alter the ID/IG values;instead,the residue of PMMA increases the IG/I2D values and the thermal decomposition of PMMA leads to higher IG/I2D values than the removal of PMMA with acetone.The effects of PMMA removal on variations of the Raman spectra are also discussed.
文摘Transfer printing of nanomaterials onto target substrates has been widely used in the fabrication of nanodevices, but it remains a challenge to fully avoid contamination introduced in the transfer process. Here we report a metal-film- assisted method to realize an ultra-clean transfer of single-walled carbon nanotubes （SWCNTs） mediated by poly（methyl methacrylate） （PMMA）. The amount of PMMA residue can be greatly reduced due to its strong physical adhesion to the metal film, leading to ultra-clean surfaces of both the SWCNTs and the substrates. This metal-film-assisted transfer method is efficient, nondestructive, and scalable. It is also suitable for the transfer of graphene and other nanostructures. Furthermore, the relatively low temperature employed allows this technique to be compatible with nanomaterial-based flexible electronics.
