以2-丙烯酰胺基-2-甲基丙磺酸(AMPS)作引发剂引发交联聚乙烯醇(PVA)-戊二醛(GA)制备水凝胶聚合物电解质并组装成超级电容器.分别由红外光谱、交流阻抗、循环伏安与恒电流充放电测定该凝胶聚合物电解质及超级电容器的电化学性能.结果表明...以2-丙烯酰胺基-2-甲基丙磺酸(AMPS)作引发剂引发交联聚乙烯醇(PVA)-戊二醛(GA)制备水凝胶聚合物电解质并组装成超级电容器.分别由红外光谱、交流阻抗、循环伏安与恒电流充放电测定该凝胶聚合物电解质及超级电容器的电化学性能.结果表明,该聚合物电解质电导率可达1.23 mS/cm(室温).而且,以1.0 gAMPS引发0.05 mL GA(5%)与1.0 g PVA交联,制得的凝胶聚合物电解质超级电容器比电容可达139 F/g,50次充放电后其值仍在80%以上.展开更多
Poly(4-diazosulfonate styrene-co-4-vinylpyridine) (P(DSS-co-VP)),containing both H-acceptor moieties of pyridine and photosensitive diazosulfonate groups,was synthesized and has been used for self-assembly as a new co...Poly(4-diazosulfonate styrene-co-4-vinylpyridine) (P(DSS-co-VP)),containing both H-acceptor moieties of pyridine and photosensitive diazosulfonate groups,was synthesized and has been used for self-assembly as a new component.The layer-by-layer deposition between P(DSS-co-VP)and m-methyl phenol formaldehyde resin (MPR) on a substrate via H-bonding interaction was investigated.After UV irradiation the stability of the multiplayer ultra thin film toward polar solvents is improved dramatically.The improvement of the solvent stability of the film should be attributed to the bond conversion between the layers of the film from H-bond to covalent bond under UV irradiation.展开更多
文摘以2-丙烯酰胺基-2-甲基丙磺酸(AMPS)作引发剂引发交联聚乙烯醇(PVA)-戊二醛(GA)制备水凝胶聚合物电解质并组装成超级电容器.分别由红外光谱、交流阻抗、循环伏安与恒电流充放电测定该凝胶聚合物电解质及超级电容器的电化学性能.结果表明,该聚合物电解质电导率可达1.23 mS/cm(室温).而且,以1.0 gAMPS引发0.05 mL GA(5%)与1.0 g PVA交联,制得的凝胶聚合物电解质超级电容器比电容可达139 F/g,50次充放电后其值仍在80%以上.
文摘Poly(4-diazosulfonate styrene-co-4-vinylpyridine) (P(DSS-co-VP)),containing both H-acceptor moieties of pyridine and photosensitive diazosulfonate groups,was synthesized and has been used for self-assembly as a new component.The layer-by-layer deposition between P(DSS-co-VP)and m-methyl phenol formaldehyde resin (MPR) on a substrate via H-bonding interaction was investigated.After UV irradiation the stability of the multiplayer ultra thin film toward polar solvents is improved dramatically.The improvement of the solvent stability of the film should be attributed to the bond conversion between the layers of the film from H-bond to covalent bond under UV irradiation.