Schottky-contacted sensors have been demonstrated to show high sensitivity and fast response time in various sensing systems.In order to improve their sensing performance,the Schottky barriers height(SBH)at the interf...Schottky-contacted sensors have been demonstrated to show high sensitivity and fast response time in various sensing systems.In order to improve their sensing performance,the Schottky barriers height(SBH)at the interface of semiconductor and metal electrode should be adjusted to appropriate range to avoid low output or low sensitivity,which was induced by excessively high or low SBH,respectively.In this work,a simple and effective SBH tuning method by triboelectric generator(TENG)is proposed,the SBH can be effectively lowered by voltage pulses generated by TENG and gradually recover over time after withdrawing the TENG.Through combining the TENG treatment with piezotronic effect,a synergistic effect on lowering SBH was achieved.The change of SBH is increased by 3.8 to 12.8 times,compared with dependent TENG treatment and piezotronic effect,respectively.Furthermore,the recovery time of the TENG-lowered SBH can be greatly shortened from 1.5 h to 40 s by piezotronic effect.This work demonstrated a flexible and feasible SBH tuning method,which can be used to effectively improve the sensitivity of Schottky-contact sensor and sensing system.Our study also shows great potential in broadening the application scenarios of Schottky-contacted electronic devices.展开更多
文摘为了提高功率肖特基整流管的反向击穿电压、抗浪涌能力,采取加场限环的方法从有源区参数、外延材料、流片工艺、产品电参数、可靠性等方面进行全面设计,制造了一种新型结势垒肖特基整流管JBS(Junction Barrier Schottky Rectifier)。经测试,器件的电参数水平正向电压VF为0.85 V^0.856 V,反向电流IR为4.0μA^50.5μA,反向电压VR为307.5 V^465.2 V,抗静电水平从低温退火的6 k V^12 k V提高到15 k V。经高温直流老化测试,器件的可靠性达到了预期的设计要求。
基金the National Key R&D Program of China(2016YFA0202703)Key-Area Research and Development Program of Guangdong Province(2018B030331001)+3 种基金the National Natural Science Foundation of China(61875015,81971770,52002027,and 82071970)Beijing Natural Science Foundation(JQ20038,2214083)China National Postdoctoral Program for Innovative Talent(BX20200380)the Fundamental Research Funds for the Central Universities。
文摘Schottky-contacted sensors have been demonstrated to show high sensitivity and fast response time in various sensing systems.In order to improve their sensing performance,the Schottky barriers height(SBH)at the interface of semiconductor and metal electrode should be adjusted to appropriate range to avoid low output or low sensitivity,which was induced by excessively high or low SBH,respectively.In this work,a simple and effective SBH tuning method by triboelectric generator(TENG)is proposed,the SBH can be effectively lowered by voltage pulses generated by TENG and gradually recover over time after withdrawing the TENG.Through combining the TENG treatment with piezotronic effect,a synergistic effect on lowering SBH was achieved.The change of SBH is increased by 3.8 to 12.8 times,compared with dependent TENG treatment and piezotronic effect,respectively.Furthermore,the recovery time of the TENG-lowered SBH can be greatly shortened from 1.5 h to 40 s by piezotronic effect.This work demonstrated a flexible and feasible SBH tuning method,which can be used to effectively improve the sensitivity of Schottky-contact sensor and sensing system.Our study also shows great potential in broadening the application scenarios of Schottky-contacted electronic devices.
