图形化蓝宝石衬底掺杂渐变GaN肖特基型紫外探测器

在图形化蓝宝石衬底掺杂渐变的氮化镓(GaN)外延片上制备了肖特基型紫外探测器。与传统结构器件相比,该器件表现出显著改善的电学和光学特性:(1)室温下,当偏压为-5V时具有极低的暗电流密度~1.3×10-8 A/cm^2;(2)在零偏压情况下,紫外/可见光抑制比为~4.2×10~3,最高的响应度为~0.147A/W,最大外量子效率为~50.7%,甚至在深紫外波段(250~360nm)平均量子效率也大于40%;(3)平均开启和关闭瞬态响应常数分别为115μs和120μs,基本不随偏压变化,且具有很好的热稳定性;(4)零偏压下热噪声限制的极限探测率为~5.5×10^(13)cm·Hz^(1/2)/W。

基于半绝缘GaN自支撑衬底的肖特基型α粒子探测器的制备及性能分析

本实验以半绝缘GaN自支撑衬底作为核辐射探测器主体,采用简单的三明治结构,通过在其正面(Ga面)沉积Ni/Au作为肖特基接触金属电极,反面(N面)沉积Ti/Al/Ti/TiN作为欧姆接触金属电极,成功制备了一种肖特基型α粒子探测器。所制备探测器在室温下拥有较小的结电容和极低的漏电流,经过快速退火后,探测器在反向偏压200 V时的漏电流仅为0.19 nA。为探究光照对探测器的影响,又在光照和避光条件下分别对探测器进行了I-t测试,发现其对光的响应也十分敏感。最后,对肖特基型探测器在不同反偏电压下进行α粒子的能谱测试,发现在反向偏压为200 V时,探测器可达到最佳能量分辨率32.82%。

A Simple Method of Surface Parameter Extraction for Gate Schottky Contact in 4H-SiC MESFETs

We investigate the effects of the surface states on the Schottky contacts in 4H-SiC MESFET. The Ti/Pt/Au gate metal contacts are deposited by electron beam evaporation and patterned by a lift-off process. Based on thermionic theory,a simple parameter extraction method is developed for determination of the surface states in metal/4H-SiC Schottky contacts. The interface state density and interface capacitance are calculated to be 4. 386 × 10^12 cm^-2 · eV^- 1 and 6. 394 × 10^-6 F/cm^2 ,which are consistent with the device＇s terminal characteristics.

Dual transfer channels of photo-carriers in 2D/2D/2D sandwich-like ZnIn2S4/g-C_(3)N_(4)/Ti_(3)C_(2) MXene S-scheme/Schottky heterojunction for boosting photocatalytic H2 evolution

Construction of multi-channels of photo-carrier migration in photocatalysts is favor to boost conversion efficiency of solar energy by promoting the charge separation and transfer.Herein,a ternary ZnIn_(2)S_(4)/g-C_(3)N_(4)/Ti_(3)C_(2) MXene hybrid composed of S-scheme junction integrated Schottky-junction was fabricated using a simple hydrothermal approach.All the components(g-C_(3)N_(4),ZnIn_(2)S_(4) and Ti_(3)C_(2) MXene)demonstrated two-dimensional(2D)nanosheets structure,leading to the formation of a 2D/2D/2D sandwich-like structure with intimate large interface for carrier migration.Furthermore,the photogenerated carriers on the g-C_(3)N_(4) possessed dual transfer channels,including one route in S-scheme transfer mode between the g-C_(3)N_(4) and ZnIn_(2)S_(4) and the other route in Schottky-junction between g-C_(3)N_(4) and Ti_(3)C_(2) MXene.Consequently,a highly efficient carrier separation and transport was realized in the ZnIn_(2)S_(4)/g-C_(3)N_(4)/Ti_(3)C_(2) MXene heterojunction.This ternary sample exhibited wide light response from 200 to 1400 nm and excellent photocatalytic H_(2) evolution of 2452.1μmol∙g^(–1)∙h^(–1),which was 200,3,1.5 and 1.6 times of g-C_(3)N_(4),ZnIn_(2)S_(4),ZnIn_(2)S_(4)/Ti_(3)C_(2) MXene and g-C_(3)N_(4)/ZnIn_(2)S_(4) binary composites.This work offers a paradigm for the rational construction of multi-electron pathways to regulate the charge separation and migration via the introduction of dual-junctions in catalytic system.

An ultrahigh-voltage 4H-SiC merged Pi N Schottky diode with three-dimensional p-type buried layers

In the modern society,there is a strong demand for semiconductor chips,and the 4H polytype silicon carbide(4H-SiC)power device is a promising candidate for the next generation semiconductor chip,which can be used in various power electronic systems.In order to improve the performance of the 4H-SiC power device,a novel ultrahigh-voltage(UHV)4H-SiC merged p-type/intrinsic/n-type(PiN)Schottky(MPS)diode with three-dimensional(3D)p-type buried layers(PBL)(3D-PBL MPS)is proposed and investigated by numerical simulation.The static forward conduction characteristics of the 3D-PBL MPS are similar to those of the conventional 4H-SiC MPS diode without the PBL(PBL-free MPS).However,when the 3D-PBL MPS is in the reverse blocking state,the 3D PBL can transfer the peak electric field(E_(peak))into a deeper position in the body of the epitaxial layer,and enhance the ability of the device to shield the high electric field at the Schottky contact interface(E_(S)),so that the reverse leakage current of the 3D-PBL MPS at 10 kV is only 0.002%of that of the PBL-free MPS.Meanwhile,the novel 3D-PBL MPS has overcome the disadvantage in the 4H-SiC MPS diode with the two-dimensional PBL(2D-PBL MPS),and the forward conduction characteristic of the 3D-PBL MPS will not get degenerated after the device converts from the reverse blocking state to the forward conduction state because of the special depletion layer variation mechanism depending on the 3D PBL.All the simulation results show that the novel UHV 3D-PBL MPS has excellent device performance.

Comparison of Different Solutions for Blocking Diode Applications in a Photovoltaic Panel under Varying Ambient Conditions

We characterized a crystalline silicon based mini-module under varying ambient conditions, developed a PSPICE model for this panel, including temperature and irradiation dependence and applied this model to the simulation of the impact of a blocking diode under different shadowing conditions. Different blocking diodes were examined, like germanium and silicon homojunction diodes and silicon Schottky diodes and compared to ＂intelligent＂ diodes, consisting of operational amplifiers with MOSFET switches. The simulations indicate a strongly reduced power loss in a panel integrating the new ＂intelligent＂ blocking diodes even when compared to silicon Schottky diodes, as the best performing traditional blocking diodes.

Flower-like Bi^0/CeO2-δ plasmonic photocatalysts with enhanced visible-light-induced photocatalytic activity for NO removal

Plasmonic bismuth(Bi^0)nanoparticle-decorated flower-like CeO2-δ(Bi^0/CeO2-δ)photocatalysts with abundant oxygen vacancies(OVs)were synthesized via a solvothermal method.The OVs can not only improve the separation of electron-hole pairs,but also facilitate the adsorption and activation of gas molecules(NO/O2).In addition,the Bi^0 nanoparticles can enhance the visible light response and prevent the recombination of charge carriers by virtue of the surface plasmon resonance(SPR)effect,achieving an excellent ability for NO elimination and NO2 inhibition under visible light irradiation.Density functional theory(DFT)calculations confirm that the Schottky barrier between Bi^0 and CeO2-δaccompanied with the OVs are pivotal for the migration of photogenerated charge carriers to involve in the photocatalytic NO removal.Trapping experiments and in situ FTIR spectroscopy were conducted to explore the mechanism of the photocatalytic NO removal,suggesting that the photocatalytic NO removal can be significantly enhanced by introducing abundant OVs and the involvement of Bi^0 metal nanoparticles.