Partially-depleted silicon-on-insulator（PDSOI）floating-body（FB）nMOSFETs and H-gate type body-contacted（BC）nMOSFETs are fabricated with different back channel implantation dosages. The off-state breakdown charact...Partially-depleted silicon-on-insulator（PDSOI）floating-body（FB）nMOSFETs and H-gate type body-contacted（BC）nMOSFETs are fabricated with different back channel implantation dosages. The off-state breakdown characteristics of these devices are presented. The off-state breakdown voltages of the FB nMOSFETs increase from 5.2 to 6. 7V, and those of the H-gate type BC nMOSFETs decrease from 11.9 to 9V as the back channel implantation dosages increase from 1.0 ×10^13 to 1.3×10^13 cm^-2. By measuring the parasitic bipolar transistor static gain and the breakdown characteristics of the pn junction between the drain and the body, the differences between the breakdown mechanisms of the FB and H-gate type BC nMOSFETs are analyzed and explained qualitatively.展开更多
文摘Partially-depleted silicon-on-insulator（PDSOI）floating-body（FB）nMOSFETs and H-gate type body-contacted（BC）nMOSFETs are fabricated with different back channel implantation dosages. The off-state breakdown characteristics of these devices are presented. The off-state breakdown voltages of the FB nMOSFETs increase from 5.2 to 6. 7V, and those of the H-gate type BC nMOSFETs decrease from 11.9 to 9V as the back channel implantation dosages increase from 1.0 ×10^13 to 1.3×10^13 cm^-2. By measuring the parasitic bipolar transistor static gain and the breakdown characteristics of the pn junction between the drain and the body, the differences between the breakdown mechanisms of the FB and H-gate type BC nMOSFETs are analyzed and explained qualitatively.
