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第二类InAs/GaSb(001)半导体超晶格能带边结构的赝势计算
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作者 刘申之 龙飞 梅飞 《江西师范大学学报(自然科学版)》 CAS 1996年第4期364-367,共4页
采用一种新的赝势方法计算了第二类InAs/GaSb超晶格能带边结构随着InAs和GaSb层厚变化的规律.计算结果显示,随着InAs和GaSb层厚的变化,超晶格中杂质将经历不同的深—浅杂质转变过程.同时。
关键词 超晶格 能带边结构 赝势 半导体 砷化铟 锑化镓
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Quasiparticle Band Structures of Defects in Anatase TiO2 Bulk
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作者 陈廷威 郝亚南 马玉臣 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2017年第6期771-775,I0003,共6页
Quasiparticle band structures of the defective anatase TiO2 bulk with O vacancy, Ti interstitial and H interstitial are investigated by the GW method within many-body Green's function theory. The computed direct band... Quasiparticle band structures of the defective anatase TiO2 bulk with O vacancy, Ti interstitial and H interstitial are investigated by the GW method within many-body Green's function theory. The computed direct band gap of the perfect anatase bulk is 4.3 eV, far larger than the experimental optical absorption edge (3.2 eV). We found that this can be ascribed to the inherent defects in anatase which drag the conduction band (CB) edge down. The occupied band-gap states induced by these defects locate close to the CB edge, exclud- ing the possible contribution of these bulk defects to the deep band-gap state below CB as observed in experiments. 展开更多
关键词 Anatase TiO2 DEFECT GW method Band structure Optical absorption edge
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The Brillouin zones and band gaps of a two-dimensional phononic crystal with parallelogram lattice structure
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作者 HU JiaGuang XU Wen 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2014年第6期1013-1019,共7页
We present a detailed theoretical study on the acoustic band structure of two-dimensional (2D) phononic crystal. The 2D pho- nonic crystal with parallelogram lattice structure is considered to be formed by rigid sol... We present a detailed theoretical study on the acoustic band structure of two-dimensional (2D) phononic crystal. The 2D pho- nonic crystal with parallelogram lattice structure is considered to be formed by rigid solid rods embedded in air. For the circu- lar rods, some of the extrema of the acoustic bands appear in the usual high-symmetry points and, in contrast, we find that some of them are located in other specific lines. For the case of elliptic rods, our results indicate that it is necessary to study the whole first Brillouin zone to obtain rightly the band structure and corresponding band gaps. Furthermore, we evaluate the first and second band gaps using the plane wave expansion method and find that these gaps can be tuned by adjusting the side lengths ratio R, inclined angle 0 and filling fraction F of the parallelogram lattice with circular rods. The results show that the largest value of the first band gap appears at θ=90° and F--0.7854. In contrast, the largest value of the second band gap is at θ=60° and F=0.9068. Our results indicate that the improvement of matching degree between scatterers and lattice pattern, ra- ther than the reduction of structural symmetry, is mainly responsible for the enhancement of the band gaps in the 2D phononic crystal. 展开更多
关键词 phononic crystal band gap lattice basis vectors plane wave expansion method
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