Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated. Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks. By combining expe...Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated. Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks. By combining experimental results and an energy-level structure analysis,origins of the multi-peaks are identified. Furthermore,inter-subband spacing of electrons and holes are deduced.展开更多
基金the State Key Development Program for Basic Research of China(No.2006CB604904)the National Natural Science Foundation of China(Nos.60776037,60676029)~~
文摘Multi-peak structures in photoluminescence spectra of InAs/GaAs quantum dots are investigated. Excitation power-dependent photoluminescence spectra are used to identify the nature of different peaks. By combining experimental results and an energy-level structure analysis,origins of the multi-peaks are identified. Furthermore,inter-subband spacing of electrons and holes are deduced.
