Hydroxyapatite(HAP) coatings were prepared on the titanium substrate in the electrolyte containing H2O2 by the pulse electrodeposition. The introduction of H2O2 restrains the evolution of H2 and improves the adhesive ...Hydroxyapatite(HAP) coatings were prepared on the titanium substrate in the electrolyte containing H2O2 by the pulse electrodeposition. The introduction of H2O2 restrains the evolution of H2 and improves the adhesive strength between coatings and substrate. The results of pulse electrodeposition show that the relaxation time of the pulse is beneficial to growth of HAP because it makes ions diffuse from bulk to the surface of electrode and reduces concentration polarization in the next pulse time. It is beneficial to the increase of the duty circle of the pulse for deposition of HAP, but the result is not good if it is increased excessively. With increasing potential, it is good for the growth of HAP coatings. If the potential is too high, it is easy for HAP coatings to drop off during the process of electrodeposition under too intensive polarization, such as -1.0 V (vs SCE), and there is not many coatings on the substrate. The combination of pulse electrodeposition and addition of hydrogen peroxide can assuredly improve the physico-chemical properties of hydroxyapatite coatings.展开更多
CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0.75 V (v...CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0.75 V (vs SCE) from linear potential scanning curve. The electrodeposited films were characterized by X-ray diffractometry (XRD), scanning electron microscopy(SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. And the influence of pulse parameters on film quality was studied. The chalcopyrite phase CuInSe2 films with smooth surface and stoichiometric composition are obtained at a pulse potential from -0.65 to -0.7 V (vs SCE), a pulse period of 1-9 ms with a duty cycle of 33% and annealing treatment.展开更多
基金Project(50104012) supported by the National Natural Science Foundation of China
文摘Hydroxyapatite(HAP) coatings were prepared on the titanium substrate in the electrolyte containing H2O2 by the pulse electrodeposition. The introduction of H2O2 restrains the evolution of H2 and improves the adhesive strength between coatings and substrate. The results of pulse electrodeposition show that the relaxation time of the pulse is beneficial to growth of HAP because it makes ions diffuse from bulk to the surface of electrode and reduces concentration polarization in the next pulse time. It is beneficial to the increase of the duty circle of the pulse for deposition of HAP, but the result is not good if it is increased excessively. With increasing potential, it is good for the growth of HAP coatings. If the potential is too high, it is easy for HAP coatings to drop off during the process of electrodeposition under too intensive polarization, such as -1.0 V (vs SCE), and there is not many coatings on the substrate. The combination of pulse electrodeposition and addition of hydrogen peroxide can assuredly improve the physico-chemical properties of hydroxyapatite coatings.
基金Project(06FJ4059) supported by Hunan Provincial Academician Foundation
文摘CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0.75 V (vs SCE) from linear potential scanning curve. The electrodeposited films were characterized by X-ray diffractometry (XRD), scanning electron microscopy(SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. And the influence of pulse parameters on film quality was studied. The chalcopyrite phase CuInSe2 films with smooth surface and stoichiometric composition are obtained at a pulse potential from -0.65 to -0.7 V (vs SCE), a pulse period of 1-9 ms with a duty cycle of 33% and annealing treatment.
