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采用化学气相沉积方法制备纯净的氧化亚铜 被引量:2
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作者 潘冠福 《当代化工》 CAS 2019年第8期1704-1706,1710,共4页
采用自行搭建的脉冲热蒸发化学气相沉积(PSE-CVD)系统,制备了薄膜状的氧化亚铜样品。通过使用XRD、SEM和XPS三种检测手段分别从晶相鉴别、微观特征和元素构成的方面对沉积的样品迚行了表征。结果证实脉冲热蒸发化学气相沉积法能够制备... 采用自行搭建的脉冲热蒸发化学气相沉积(PSE-CVD)系统,制备了薄膜状的氧化亚铜样品。通过使用XRD、SEM和XPS三种检测手段分别从晶相鉴别、微观特征和元素构成的方面对沉积的样品迚行了表征。结果证实脉冲热蒸发化学气相沉积法能够制备出高纯度的氧化亚铜。 展开更多
关键词 亚铜 脉冲蒸发化学沉积(PSE-CVD) XRD SEM XPS
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Enhanced Property of Thin Cuprous Oxide Film Prepared through Green Synthetic Route 被引量:2
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作者 Ling-nan Wu Zhen-yu Tian 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2019年第3期365-372,I0002,共9页
Thin cuprous oxide films have been prepared by chemical vapor deposition(pulsed spray evaporation-chemical vapor deposition)method without post-treatment.The synthesis of cuprous oxide was produced by applying a water... Thin cuprous oxide films have been prepared by chemical vapor deposition(pulsed spray evaporation-chemical vapor deposition)method without post-treatment.The synthesis of cuprous oxide was produced by applying a water strategy effect.Then,the effect of water on the morphology,topology,structure,optical properties and surface composition of the obtained films has been comprehensively investigated.The results reveal that a pure phase of Cu2O was obtained.The introduction of a small quantity of water in the liquid feedstock lowers the band gap energy from 2.16 eV to 2.04 eV.This finding was mainly related to the decrease of crystallite size due to the effect of water.The topology analyses,by using atomic force microscope,also revealed that surface roughness decreases with water addition,namely more uniform covered surface.Moreover,theoretical calculations based on density functional theory method were performed to understand the adsorption and reaction behaviors of water and ethanol on the Cu2O thin film surface.Formation mechanism of the Cu2O thin film was also suggested and discussed. 展开更多
关键词 Cuprous oxide thin films Pulsed spray evaporation-chemical vapor deposition method Green synthetic route Optical and topology property Band gap Density functional theory calculation
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