平流式流动电位测试系统的研制

分离膜表面的荷电化显著地影响着膜的分离性能和耐污染能力。因此,定量化表征膜表面电性能具有重要的理论价值和实际意义。作者在前期透过式膜流动电位测试系统研发工作的基础上成功地研制了平流式流动电位测试系统,并且首次将恒电流法测膜体电导引入膜表面ζ(Zeta)电位的确定过程中。以自制不同共混比的合金荷电膜为测试对象,利用该测试系统和经典的Helmholtz-Smoluchowski(H-S)方程及其变体得到了不同pH下的膜表面Zeta电位,从而揭示了膜表面电导、膜体电导对膜表面Zeta电位的贡献,并展示了该流动电位测试系统的有效性。

Energy Stabilities, Magnetic Properties, and Electronic Structures of Diluted Magnetic Semiconductor Zn1-xMnxS（001） Thin Films

We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.

Interface waves between two piezoelectric half-spaces with a semiconductor film

In this work propagation of anti-plane (SH) waves in two piezoelectric ceramic half-spaces with a thin layer of a semiconducting material between the half-spaces is studied, and wave attenuation and dispersion caused by semiconduction as well as wave amplification by a biasing electric field are examined. Key words Piezoelectricity - Semiconductor - Wave - Attenuation - Dispersion Document code A CLC number TH11

Exogenous phosphatidylethanolamine induces apoptosis of human hepatoma HepG2 cells via the bcl-2/bax pathway

AIM: To investigate the signaling pathways implicated in phosphatidylethanolamine (PE)-induced apoptosis of human hepatoma HepG2 cells. METHODS: Inhibitory effects of PE on human hepatoma HepG2 cells were detected by 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) assay. Cell cycle, apoptosis and mitochondrial transmembrane potential (ΔΨm) were analyzed by flow cytometry. Immunocytochemical assay and Western blotting were used to examine Bcl-2, Bax and caspase-3 protein levels in HepG2 cells treated with PE. RESULTS: PE inhibited the growth of HepG2 cells in a doseand timedependent manner. It did notaffect the cell cycle, but induced apoptosis. PE significantly decreased ΔΨm at 0.25, 0.5 and 1 mmol/L, respectively, suggesting that PE induces cell apoptosis by decreasing the mitochondrial transmembrane potential. The Bcl-2 expression level induced by different concentrations of PE was lower than that in control groups. However, the Bax expression level induced by PE was higher than that in the control group. Meanwhile, PE increased the caspase-3 expression in a doseand time-dependent manner. CONCLUSION: Exogenous PE induces apoptosis of human hepatoma HepG2 cells via the bcl-2/bax pathway.

Influence of Poly（methyl metacrylate） Addition on Resistive Switching Performance of P3HT/P（VDF-TrFE） Blend Films

Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc- curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly（methyl metacrylate） （PMMA） was introduced as additive into P3HT/P（VDF-TrFE） semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the configuration of three components was also put forward to well understand our experimental observations.

Preparation and operation characteristics of organic semiconductor transistor using thin film Al gate and copper phthalocyanine

The organic static induction transistors (OSITs) are fabricated by the method of evaporating and plating in a vacuum with copper phthalocyanine (CuPc) dye, and has a five layered structure of Au/CuPc/Al/CuPc/Au. The experiment reveals that OSITs have obtained a low driving voltage, high current density and high switch speed such as I_ DS = 1.2×10 -6 A/mm2, and the degree of 1 000 Hz. The OSITs have excellent operation characteristics of typical static induction transistors.

Electroluminescent Excitation Mechanism of Erbium－activated Zinc Sulfide Semiconductor Thin Film Devices

The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation luminance peaks during decay are observed. A model description for energy transfer has been proposed. The experimental results can be theoretically explained with the computer curve fittings.

Study of the selective effect on cells induced by nanosecond pulsed electric field with the resistor-capacitor circuit model

A resistor-capacitor(RC)circuit model is proposed to study the effect of nanosecond pulsed electricfield on cells according to the structure and electrical parameters of cells.After a nanosecond step fieldhas been applied,the variation of voltages across cytomembrane and mitochondria membrane both in nor-mal and in malignant cells are studied with this model.The time for selectively targeting the mitochondriamembrane and malignant cell can be evaluated much easily with curves that show the variation of voltageacross each membrane with time.Ramp field is the typical field applied in electrobiology.The voltagesacross each membrane induced by ramp field are analyzed with this model.To selectively target the mito-chondria membrane,proper range of ramp slope is needed.It is relatively difficult to decide the range ofa slope to selectively affect the malignant cell.Under some conditions,such a range even does not exist.

Tradeoffbetween Narrowing Optical Band Gap and Enhancing Electrical Conductivity of the Metal Nanoparticles-Modified Titanium Oxide Films

The n-type semiconducting titanium oxide thin films are well-known as electron transporting interlayer in photovoltaic cells. The favorable characteristics of interlayers in photovoltaics are high optical transmittance （T%）, wide band gap energy （Eg） and high electrical conductivity （σ）. Modifying titanium oxide films with metal nanoparticles would increase electrical conductivity but reduce optical band gap energy. We developed the sol-gel derived titanium suboxide （TiOx） films modified with silver （Ag） or gold （Au） or copper （Cu） nanoparticles （NPs）. This study explores a tradeoff between narrowing optical band gap and enhancing electrical conductivity of nanostructured TiOx films by controlling the Au- or Ag- or Cu-NPs loading concentrations （mol%） in titania. The Au- and Cu-NPs loading concentration of 4 mol% should meet a tradeoff which yields the higher T%, wider Eg and higher compared to those of pure TiOx films. In addition, since the pure Cu is not thermodynamically stable in ambience as compared to Au and Ag, the stability of as-obtained colloidal CuNPs is also examined. A careful examination of the time evolution of surface plasmon resonance （SPR） bands of CuNPs indicates that their stability is only up to 4 h.

Preparation of SnS∶Ag Thin Films by Pulse Electrodeposition

SnS：Ag thin films were deposited on ITO by pulse electro-deposition. They were characterized with X-ray diffraction spectroscopy and atomic force microscope. The as-deposited films have a new phase （Ag8SnS6） with good crystallization and big grain size. The conductivity of the films was measured by photoelectrochemical test. It is proved that the SnS：Ag films are p-type of semiconductor. Hall measurement shows that the carrier concentration of the films increases, while their resistivity decreases after Ag-doping.

Protective paracrine effect of mesenchymal stem cells on cardiomyocytes

Objective： The aim of this study was to test the protective effect of mesenchymal stem cells （MSCs） on cardiomyocytes in vitro and to investigate the anti-apoptotic signaling pathway. Methods： MSCs from Sprague-Dawley （SD） rats were separated and cultured. MSC medium was collected from MSCs （DMEM） under hypoxia. Cultured cardiomyocytes from neonatal cultured in serum-free Dulbecco＇s modified eagle medium SD rats were exposed to hypoxia/reoxygenation （H/R） and treated with MSC medium. The apoptotic cardiomyocytes were stained with Annexin-V-fluorescein isothiocyanate （FITC）, Hoechst 33342 and terminal deoxynucleotidyl transferase-mediated dUTP nick-end labeling （TUNEL）. The mitochondrial transmembrane potential of cardiomyocytes was assessed using a fluorescence microscope. The expression of Bcl-2, Bax, cyto- chrome C, apoptosis-induced factor （AIF）, and caspase-3 was tested by Western blot analysis. Results： Our data demonstrated that MSC medium reduced H/R-induced cardiomyocyte apoptosis, increased the Bcl-2/Bax ratio, and reduced the release of cyto- chrome C and AIF from mitochondria into the cytosol. Conclusion： MSCs protected the cardiomyocytes from H/R-induced apoptosis through a mitochondrial pathway in a paracrine manner.

Continuous and highly ordered organic semiconductor thin films via dip-coating:the critical role of meniscus angle

Dip-coating is a low-cost,high-throughput technique for the deposition of organic semiconductors over large area on various substrates.Tremendous studies have been done and many parameters such as withdrawal speed,solvent type and solution concentration have been investigated.However,most of the depositions were ribbons or dendritic crystals with low coverage of the substrate due to the ignorance of the critical role of dynamic solution-substrate interactions during dip-coating.In this study,meniscus angle(MA)was proposed to quantify the real-time in-situ solutionsubstrate interactions during dip-coating.By proper surface treatment of the substrate,the value of MA can be tuned and centimeter-sized,continuous and highly ordered organic semiconductor thin films were achieved.The charge transport properties of the continuous thin films were investigated by the construction of organic field-effect transistors.Maximum(average)hole mobility up to 11.9(5.1)cm2V-1s-1was obtained.The average mobility was 82%higher than that of ribbon crystals,indicating the high crystallinity of the thin films.Our work reveals the critical role of dynamic solutionsubstrate interactions during dip-coating.The ability to produce large-area,continuous and highly ordered organic semiconductor thin films by dip-coating could revival the old technique for the application in various optoelectronics.

Experimental and theoretical study of the charge transport property of 4,4′-N,N′-dicarbazole-biphenyl

The hole and electron mobilities of the amorphous films of the organic semiconductor 4,4′-N,N′-dicarbazole-biphenyl (CBP) at different electric fields were measured through the time of flight (TOF) method. Based on its crystalline structure, the hole and electron mobilities of CBP were calculated. A detailed comparison between experimental and theoretical results is necessary for further understanding its charge transport properties. In order to do this, charge mobilities at zero electric field, μ(0), were deduced from experimental data as a link between experimental and theoretical data. It was found that the electron transport of CBP is less affected by traps compared with its hole transport. This unusual phenomenon can be understood through the distributions of frontier molecular orbitals. We showed that designing materials with frontier molecular orbitals localized at the center of the molecule has the potency to reduce the influence of traps on charge transport and provide new insights into designing high mobility charge transport materials.

A novel manganese complex LMnAc selectively kills cancer cells by induction of ROS-triggered and mitochondrial-mediated cell death

We previously identified a novel synthesized metal compound, LMnAc （[L2Mn2（Ac）（H20）e]（Ac） （L=bis（2-pyridylmethyl） amino-2-propionic acid））. This compound exhibited significant inhibition on cancer cell proliferation and was more selective against cancer cells than was the popular chemotherapeutic reagent cisplatin. In this study, we further investigated the underlying molecular mechanisms of LMnAc-induced cancer cell death. We found that LMnAc achieved its selectivity against cancer cells through the transferrin-transferrin receptor system, which is highly expressed in tumor cells. LMnAc triggered cancer cells to commit autophagy and apoptosis, which was mediated by the mitochondrial pathway. Moreover, LMnAc disrupted mitochondrial function, resulting in mitochondrial membrane potential collapse and ATP reduction. In addition, LMnAc induced intracellular Ca^2＋ overload and reactive oxygen species generation. Interestingly, its anticancer effect was significantly reduced following pretreatment with the antioxidant N-acetyl cysteine, indicating that reactive oxygen species triggered cell death. Altogether, our data suggest that LMnAc appears to be a selectively promising anticancer drug candidate.

High yield fabrication of semiconducting thin-film field-effect transistors based on chemically functionalized single-walled carbon nanotubes

Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors(FETs) with high yield based on chemically functionalized single-walled carbon nanotubes(SWNTs) by organic radical initiators.The UV-Vis-NIR spectra,Raman spectra and electrical characterization demonstrated that metallic species in CoMoCat 65 and HiPco SWNTs could be effectively eliminated after reaction with some organic radical initiators.The effects of the substrate properties on the electrical properties of FET devices were investigated,and the results showed that the electrical properties of FET devices fabricated on high hydrophobic substrates were better than those on low hydrophobic substrates.Furthermore,it was found that FET devices based on 1,1'-azobis(cyanocyclohexane)(ACN)-modified CoMoCat 65 SWNTs exhibited more excellent electrical performance with effective mobility of ～11.8 cm2/Vs and on/off ratio of ～2×105 as compared with benzoyl peroxide(BPO)-modified CoMoCat 65 SWNTs and lauoryl peroxideand(LPO)-modified HiPco SWNTs,likely due to the introduction of the electron-withdrawing groups(CN group) on the SWNT surface.This method does not require nontrivial reaction conditions or complicated purification after reaction,therefore promising low-cost production of high-performance devices for macroelectronics.