金刚石膜生长法中石墨的纳米微团运动模型初探

利用扫描电镜分别观察了经高温高压处理后石墨在Ni70Mn25Co5合金和金刚石包膜中的形貌特征，分析了各种石墨形貌形成的原因，初步探索了金刚石膜生长法中石墨的纳米微团运动模型，为进一步研究金刚石生成机理提供了新的线索。

SOI基上制备CuO纳米线

在SOI基上制备光电纳米器件具有良好的光电集成应用前景,通过铜膜生长法在 SOI 基上制备了形貌为类针状的 Cu（OH）2前驱体纳米线,并采用热处理法600℃条件下成功制备了 CuO 纳米线。通过扫描电镜（SEM）、透射电镜（TEM）、X 射线衍射测试（XRD）对样品结构、形貌进行了表征。 SEM、TEM测试结果表明,Cu（OH）2前驱体纳米线结构一致,尺寸均匀,表面光滑。在 Cu（OH）2前驱体纳米线上二次生长的CuO 纳米线具有类蒲草状细长光滑的结构, CuO纳米线直径约为80-100 nm,长度约为10μm, CuO 纳米线结晶性良好。

Influence of relative positions between RF coil and crucible on sapphire crystals by edge-defined film-fed growth(EFG) technique

To obtain the stable temperature field required for growing sapphire crystals, the influence of relative positions between RF coil and crucible on the performances of sapphires produced by edge-defined film-fed growth（EFG） technique was investigated. For comparison, the crucible was located at the top（case A） and the middle（case B） of the RF coil, respectively. Furthermore, the lattice integrities were studied by the double-crystal X-ray diffraction, and the dislocations were observed under the optical microscope and atomic force microscope after corroding in molten KOH at 390 ℃. The crystals in case B exhibit better lattice integrity with smaller full width at half maximum of 29.13 rad·s, while the value in case A is 45.17 rad·s. The morphologies of dislocation etch pits in both cases show typical triangular symmetry with smooth surfaces. However, the dislocation density of 2.8×104 cm-2 in case B is only half of that in case A, and the distribution is more uniform, compared to the U-shaper in case A.

Effects of Powder Ridge Cultivation on Growth and Yield of Hunan Cassava

[Objective] The aim was to explore a suitable cultivation approach for cassava in Hunan province. [Method] With SC9(Southern China 9) as test materials, the test included four treatment methods, as follows: control group by traditional cultivation with crops uncovered(CK), treatment 1 by traditional cultivation with mulch coverage, treatment 2 by powder ridge cultivation with crops uncovered, and treatment 3 by powder ridge cultivation with mulch coverage. Water and fertilizer managements were kept the same. [Result] Compared with traditional cultivation(CK), the treatment by powder ridge cultivation with mulch coverage performed better. Specifically, yield per unit area reached 44 790 kg/hm2, increasing by 86.38%(20 760 kg/hm2) than that of control; starch content grew by 17.24%. The cultivation method considerably improved cassava yield and quality. [Conclusion] Powder ridge cultivation with mulch coverage is a cultivation approach suitable for cassava in Hunan province.

Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy

Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystalline quality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on the nitridation time, which determined substrate surface topography. The different nitridation schemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the main excitonic peak in photoluminescence spectra at room temperature.

Growth Kinetics of Silicon Carbide Film Prepared by Heating Polystyrene/Si（111）

SiC films were prepared by heating polystyrene/Si（111） in normal pressure argon atmosphere at different temperatures. The films were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Fourier transform infrared absorption measurements. The thicknesses of SiC films were calculated from FTIR spectra. The growth kinetics of the growth process of SiC films were investigated as well. The thicknesses of the SiC films grown for 1 h with increasing growth temperatures have different trends in the three temperature ranges： increasing slowly （1200-1250 ℃）, increasing quickly （1250- 12.70 ℃）, and decreasing （1270-1300 ℃）. The apparent activation energies of the growth process of SiC films in the three ranges were calculated to be 122.5,522.5, and -127.5 J/mol respectively. Mechanisms of the different growth processes were discussed. The relation between film thicknesses and growth temperatures indicated that the growth process was a 2D mechanism in the first range and 3D mechanism in the second range. In the third range, the thicknesses of SiC films were decreased by the volatility of Si and C atoms.

A direct atomic layer deposition method for growth of ultra-thin lubricant tungsten disulfide films

We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide （WS2） films. The WS2 films were deposited on a Si （100） substrate and a zinc sulfide （ZnS） film coated the Si （100） substrate using tungsten hexacarbonyl and hydrogen sulfide as precursors. The ZnS film served as an intermediate layer to facilitate the nucleation and growth of the WS2 films. The thickness of the WS2 films was measured via scanning electron microscope, the microstructure was probed with an X-ray diffractometer and a transmission electron microscope. The friction coefficient was measured with a ball-on-disk tester under dry nitrogen. The results reveal that the WS2 films deposited on both substrates are N175 nm and have （002） and （101） crystal orientations. The WS2 film deposited on the ZnS coated Si substrate exhibits a stronger （002） orientation and a denser crystal structure than that deposited on the Si substrate. The WS2 films on both substrates have low friction coefficients. How- ever, due to the stronger （002） orientation and denser crystal structure, the friction coefficient of the WS2 film deposited on ZnS coated Si substrate is smaller with longer wear life.

Ultrathin ZnO membranes a few atomic layers in thickness

For the first time we fabricated ZnO membranes with thicknesses of 2.4 nm by a facile one-pot synthesis in aqueous solution.The crystal analysis revealed that the hexagonal ZnO membranes were about 10 atomic layers in thickness.The ZnO membranes bent,scrolled,intersected with each other,and self-assembled to particles in micrometre size.The hierarchical assemblies showed sponge-like structures with room inside.In the growth process,a cationic polyelectrolyte was utilized to modulate growth behavior of the ZnO crystals.As a result,the preferred growth direction of ZnO membranes is along 0110,which was perpendicular to[0001]growth direction in a typical hydrothermal synthesis.The growth mechanism of the membranes was also discussed.