培养的新生大鼠交感神经元膜电学性质及电压门控通道的膜片箝研究

在培养的新生大鼠颈上神经节交感神经元标本上，用全细胞电流箝及电压箝技术观察记录了交感神经元膜电学参数及电压门控性通道电流。用全细胞电流箝测得下列平均值：静息电位，－５１±６ｍＶ；输入阻抗，１４３２±３８９ＭΩ；时间常数，１３０±３２ｍｓ；动作电位幅度，９６±１０ｍＶ，超射值，４２±６ｍＶ。培养早期即可记录到自发或诱发的动作电位，大多数动作电位后跟随快或慢的后超极化电位。在电压箝状态下可分别记录到电压门控钠、钾、钙通道电流。钾电流以延迟整流型为主，钙电流只有高电压激活，缓慢失活的Ｌ或Ｎ型，未能记录到低电压激活，快速失活的Ｔ型钙电流。

猫扣带回前部内脏伤害感受神经元的膜电学特性

目的 :研究猫扣带回前部内脏大神经刺激相关神经元的膜电生理特性 ,以便从神经元水平进一步了解大脑皮质内脏伤害感受的特性及机制 ,为痛觉理论“特异性学说”提供新的实验依据。方法 :应用在体玻璃微电极细胞内电位记录技术及细胞内注入极化电流的方法 ,测量和计算神经元的膜电学参数。结果 :将 2 0只猫扣带回前部 1 76个内脏大神经刺激相关神经元 ,分为内脏伤害 (1 4 8个 )和非伤害 (2 8个 )感受神经元。发现它们在膜电阻、时间常数、膜电容及I V曲线等方面存在差异。注入去极化电流引发的放电幅值及频率也存在差异。结论 :扣带回前部内脏伤害与非伤害感受神经元可能在细胞膜结构。

猫扣带回前部内脏与躯体伤害感受神经元膜电学特性的对比研究

目的对比研究猫扣带回前部内脏伤害感受神经元与躯体伤害感受神经元膜电学特性,从膜电学方面为阐明内脏痛与躯体痛具有不同感受特性的机制提供实验依据。方法选择成龄猫77只,体质量2.0~3.5 kg,雄雌不限。根据在体微电极记录的扣带回前部神经元对电刺激内脏大神经或隐神经产生的诱发反应的特点及吗啡对该诱发反应的影响,检出具有长潜伏期(≥50 ms)的内脏伤害感受神经元或躯体伤害感受神经元。应用在体微电极向内脏伤害感受神经元或躯体伤害感受神经元内注入波宽50 ms、不同强度(-5 n A^+5 n A)的一系列极化电流,记录神经元膜电学反应,计算膜电学参数。结果在扣带回前部记录了254个内脏伤害感受神经元和172个躯体伤害感受神经元。内脏伤害感受神经元的内脏大神经诱发反应阈值比躯体伤害感受神经元的隐神经诱发反应阈值高;与躯体伤害感受神经元相比,内脏伤害感受神经元的膜电阻、膜电容、时间常数较大。结论扣带回前部内脏伤害感受神经元与躯体伤害感受神经元的膜电学特性存在差异,可能是内脏痛与躯体痛具有不同感受特性的膜电学基础。

大脑皮层内脏伤害感受与非伤害感受神经元膜电学特性比较

为了从神经元水平探讨大脑皮层内脏伤害性感受的特性及机制 ,应用细胞内电位记录技术 ,研究猫皮层体感区 (SI)中内脏大神经皮层代表区的 85 1个神经元膜电生理特性 ,将所记录的神经元分为内脏伤害性感受 ( 41 2个 )和非伤害感受 ( 439个 )神经元 .用细胞内注电流的方法 ,测量和计算其膜电学参数 ,并进行两类神经元的电学特性比较 ,发现它们在膜电阻、时间常数、膜电容、静息电位、细胞活跃程度及皮层深度分布等方面存在差别 .注电流引发的放电反应频率及I_V曲线也有差异 ,结果提示SI区内脏伤害感受及非感受神经元在形态及膜结构上可能有不同之处 ,为痛觉特异性学说提供新的依据 .部分神经元用神经生物素进行细胞内电泳标记以显示功能细胞所在部位及形态 。

猫扣带回前部躯体伤害性与非伤害性感受神经元膜电学特性的对比

应用在体微电极胞内电位记录技术分别向猫扣带回前部躯体伤害性感受神经元与非伤害性感受神经元内注入波宽50ms、不同强度(-5 n A^+5 n A)的系列超级化或去极化电流,记录神经元的膜电学反应,计算膜电学参数。通过对比躯体伤害性与非伤害性感受神经元的膜电学特性,从该侧面为深入了解该脑区躯体伤害性感受的特性及机制提供实验依据。在57只猫扣带回前部共记录了188个神经元,其中172个为躯体伤害性感受神经元(91.5%),另外16个为躯体非伤害性感受神经元(8.5%)。结果表明:躯体伤害性与非伤害性感受神经元的注入电流(I)-膜电位(V)曲线都为"S"型;注入电流强度的绝对值≤1n A时,躯体伤害性与非伤害性感受神经元I-V曲线的I与V均呈线性相关(r都为0.99);而注入电流强度的绝对值>1 n A时,两者均呈现内向或外向整流作用;但是,与躯体非伤害性感受神经元相比,躯体伤害性感受神经元的整流作用较大,对刺激的适应性较低,诱发放电的频率较高(P<0.01),并且,随注入的去极化电流强度的逐渐增大,放电频率变化也较大;另外,躯体伤害性感受神经元的膜电阻、膜电容、时间常数也明显大于躯体非伤害性感受神经元(P<0.05或P<0.01)。这些结果提示扣带回前部躯体伤害性与非伤害性感受神经元在直径大小、细胞膜结构等方面存在差异。

猫体感皮质内脏伤害感受神经元的膜电生理特性

应用细胞内电位记录技术，研究猫ＳＩ中内脏大神经皮质代表区的８５１个神经元膜电生理特性，用胞内注入极化电流的方法，测量和计算出神经元的膜电学参数，并进行内脏痛伤害感受及非相关神经元的电学特性比较，发现二者在膜电阻、时间常数、膜电容、静息电位、细胞活跃程度及神经元深度分布等方面存在差别。注电流引发的频率－电流、动作电位幅值－电流、及Ｉ－Ｖ曲线也有差异，结果提示ＳＩ区内脏伤害感受及非相关神经元在形态及膜结构上可能有不同之处，为痛觉特异学说提供资料。部分神经元用神经生物素进行细胞内电泳标记以显示功能细胞所在层次及形态，从单一皮层感受神经元的反应及形态特点探讨了内脏痛的感受特性。

Electrical and nonlinear optical properties of TGZO transparent conducting films deposited by magnetron sputtering

Thin transparent oxide conducting films(TCOFs)of titanium and gallium substituted zinc oxide(TGZO)were fabricated via radio frequency(RF)magnetron sputtering technique.The effects of RF power on electrical,linear and nonlinear optical characteristics were investigated by Hall tester,Ultraviolet(UV)-visible spectrophotometer and optical characterization method.The results indicate that RF power significantly influences the electrical and optical properties of the deposited films.As RF power raises,the resistivity and Urbach energy fall initially and then rise,while the figure of merit,mean visible transmittance and optical bandgap show the reverse variation trend.At RF power of 190 W,the TGZO sample exhibits the highest electro-optical properties,with the maximum figure of merit(1.14×10^(4)Ω^(-1)∙cm^(-1)),mean visible transmittance(86.9%)and optical bandgap(3.50 eV),the minimum resistivity(6.26×10^(-4)Ω∙cm)and Urbach energy(174.23 meV).In addition,the optical constants of the deposited films were determined by the optical spectrum fitting method,and the RF power dependence of nonlinear optical properties was studied.It is observed that all the thin films exhibit normal dispersion characteristics in the visible region,and the nonlinear optical parameters are greatly affected by the RF power in the ultraviolet region.

Fabrication and anti-corrosion performance of superhydrophobic silane film on sintered NdFeB

An eco-friendly superhydrophobic protective film(DTMS/TEOS silane film)was fabricated on sintered NdFeB substrate through the utilization of electrochemically assisted deposition technology.The structure,properties,and film-forming mechanism of dodecyltrime-thoxysilane(DTMS)/tetraethoxysilane(TEOS)silane films were comprehensively analyzed using Fourier transform infrared spectroscopy(FT-IR),scanning electron microscopy(SEM),X-ray photoelectron spectroscopy(XPS),potentiodynamic polarization curves and electrochemical impedance spectroscopy(EIS).Based on the test results,it can be determined that this film has a superhydrophobic property with a hydrophobicity angle of 152°.This special property can be attributed to the long alkyl chains in the DTMS molecule,the rough morphology,and the low surface energy of the DTMS/TEOS silane film.The surface of sintered NdFeB is coated with a layered three-dimensional network silane film that forms through the condensation of silanol substances.This film provides excellent corrosion resistance to the sintered NdFeB substrate,reducing its corrosion current density to 2.02×10~(-6)A/cm~2.Moreover,the impact of film on the magnetic characteristics of sintered NdFeB was assessed and found to be minimal.

Electrodeposition of Cu_2O/g-C_3N_4 heterojunction film on an FTO substrate for enhancing visible light photoelectrochemical water splitting

An immobilized Cu2O/g-C3N4 heterojunction film was successfully made on an FTO substrate by electrophoretic deposition of g-C3N4 on a Cu2O thin film.The photoelectrochemical（PEC） performance for water splitting by the Cu2O/g-C3N4 film was better than pure g-C3N4 and pure Cu2O film.Under-0.4 V external bias and visible light irradiation,the photocurrent density and PEC hydrogen evolution efficiency of the optimized Cu2O/g-C3N4 film was-1.38 mA/cm^2 and 0.48 mL h^-1 cm^-2,respectively.The enhanced PEC performance of Cu2O/g-C3N4 was attributed to the synergistic effect of light coupling and a matching energy band structure between g-C3N4 and Cu2O as well as the external bias.

Structural and optoelectronic properties of AZO thin films prepared by RF magnetron sputtering at room temperature

Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10^-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.

Preparation and characterization of diamond film on Cu substrate using Cu-diamond composite interlayer

Large area diamond films were fabricated on copper substrates by a multi-step process comprised of electroplating Cu-diamond composite layer on Cu substrate, plating a Cu layer to fix the protruding diamond particles, and depositing continuous diamond film on composite interlayer by hot-filament chemical vapor deposition （HFCVD）. The interface characteristics, internal stress and adhesion strength were investigated by scanning electron microscopy, Raman analysis and indentation test. The results show that the continuous film without cracks is successfully obtained. The microstructure of the film is a mixture of large cubo-octahedron grains grown from homo-epitaxial growth and small grains with （111） apparent facets grown from lateral second nuclei. The improved adhesion between diamond film and substrate results from the deep anchoring of the diamond particles in the Cu matrix and the low residual stress in the film.

In-situ investigation of atmospheric corrosion behavior of bronze under thin electrolyte layers using electrochemical technique

The atmospheric corrosion behavior of bronze under thin electrolyte layer （TEL） with different thicknesses was monitored using cathodic polarization curves, open circuit potential （OCP） and electrochemical impedance spectroscopy （EIS）. Cathodic polarization result indicates that the cathodic limiting current density increases with decreasing the TEL thickness. EIS result shows that the corrosion rate increases with decreasing the TEL thickness at the initial stage because the corrosion is dominated by the cathodic process, whereas after long immersion time, the corrosion degree with the TEL thickness is in the sequence of 150 μm 〉 310 μm〉 10μm ≈ bulk solution 〉 57 μm. The measurements of OCP and EIS present in-situ electrochemical corrosion information and their results are in good agreement with that of physical characterizations.

Effect of Ba_(0.5)Bi_(0.5)Fe_(0.9)Sn_(0.1)O_3 addition on electrical properties of BaCo_(0.02)~ⅡCo_(0.04)~ⅢBi_(0.94)O_3 thick-film thermistors

Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.

In situ investigation of atmospheric corrosion behavior of PCB-ENIG under adsorbed thin electrolyte layer

The effects of relative humidity (RH) on a printed circuit board finished with electroless nickel immersion gold (PCB-ENIG) under an adsorbed thin electrolyte layer (ATEL) were investigated in situ via the measurement of cathodic polarization curves, electrochemical impedance spectroscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy to clearly elaborate the corrosion behavior of PCB-ENIG in the atmospheric environment. Results indicated that the cathodic process of PCB-ENIG under ATEL was dominated by the reduction of dissolved oxygen, corrosion products, and H2O. The cathodic current density of PCB-ENIG increased progressively with increasing RH. Moreover, its cathodic current density in the solution was greater than that under ATEL. This result demonstrated that the diffusion process was not the controlling step during the limiting reduction of cathodic oxygen. When the polarization potentials were located in a more negative region, the cathodic polarization current density gradually decreased under 75% and 85% RH. Notably, the anodic process became the controlling step in the extremely thin liquid film during the remainder of the experiment.

微结构对CVD金刚石X射线探测器电性能的影响

制备了结构为Ａｕ/金刚石膜/Ｓｉ/Ａｌ的光导型Ｘ射线探测器,研究了金刚石膜微观结构对器件暗电流－电压特性、电流温度特性以及在稳态Ｘ射线辐照下响应特性的影响．研究表明,采用[００１]结构金刚石膜制备的器件具有较大的暗电流和Ｘ射线响应．在高于５００Ｋ的温度区域内,随着温度的上升,器件暗电流以指数式上升,这可能与Ｓｉ占据金刚石格点产生１．６８ｅＶ的激活能有关．

Effect of citric acid on microstructure and electrochemical characteristics of high voltage anodized alumina film formed on etched Al Foils

Aluminum capacitor foils with a tunnel etch structure were reacted with boiling water and then anodized at 530 V in boric acid solution or boric acid＋citric acid mixed solution.The microstructure and crystallinity of the resulting anodized film were examined by TEM and XRD.The special capacitance,resistance and withstanding voltage of the film were explored with electrochemical impedance spectroscopy（EIS）,LCR meter and small-current charging.The results show that the high voltage anodized oxide film consists of an inner layer with high crystallinity and an outer layer with low crystallinity.However,the crystallinity of the film formed in boric acid＋citric acid mixed solution is higher than that of the film formed in only boric acid solution,leading to an increase in film＇s field strength and special capacitance.Meanwhile,there are more defects from phase transformation in the out layer of the film formed in boric acid＋citric acid mixed solution than in that of film formed in only boric acid solution,leading to a decrease in film＇s resistance and withstanding voltage.

Influence of Ti target current on microstructure and properties of Ti-doped graphite-like carbon films

Ti-doped graphite-like carbon （Ti-GLC） films were synthesized successfully by magnetron sputtering technique. The compositions, microstructures and properties of the Ti-doped GLC films dependent on the parameter of Ti target current were systemically investigated by Raman spectra, X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, nanoindentation and ball-on-disk tribometer. With the increase of the Ti target current, the ratio of sp2 bond and the content of Ti as well as the film hardness and compressive internal stress increase, but the high content of the Ti would result in the loose film due to the formation of the squamose structure. Less incorporated Ti reduces the friction of the GLC film in dry-sliding condition, while pure GLC film exhibits the lowest friction coefficient in water-lubricated condition. Ti-GLC film deposited with low Ti target current shows high wear resistance in both dry-sliding and water-lubricated conditions.

Sulfur composition on surface of chalcopyrite during its bioleaching at 50°C

The composition of passive layer of chalcopyrite was investigated by X-ray photoelectron spectroscopy（XPS）, accompanied with cyclic voltammetry（CV）. The leaching experiment shows that the extraction rates of Cu with leaching for 30 d by sterile control and microorganisms are 4.0% and 21.5%, respectively. In comparison, 3.8% and 10.5% Fe are leached by sterile control and microorganisms, respectively. The results of XPS studies suggest that Fe atoms dissolve preferentially from the chalcopyrite lattice, and disulfide（S22-）, polysulfide（Sn2-） and elemental sulfur（S0） are identified on the chalcopyrite surfaces leached by sterile control and microorganisms. Additionally, sulfate（SO42-） is detected on the chalcopyrite surfaces leached by microorganisms, and most of it probably originates from jarosite. The analysis of CV results reveals that metal-deficient sulfide（Cu1-xFe1-yS2-z, yx） and elemental sulfur（S0） passivate the surface of chalcopyrite electrode. The elemental sulfur and/or jarosite coating on the chalcopyrite surface may have impact on the leaching process; however, the disulfide, polysulfide or metal-deficient sulfide plays a more key role in the chalcopyrite leaching.

Flexible free-standing graphene-like film electrode for supercapacitors by electrophoretic deposition and electrochemical reduction

Electrophoretic deposition in conjunction with electrochemical reduction was used to make flexible free-standing graphene-like films. Firstly, graphene oxide （GO） film was deposited on graphite substrate by electrophoretic deposition method, and then reduced by subsequent electrochemical reduction of GO to obtain reduced GO （ERGO） film with high electrochemical performance. The morphology, structure and electrochemical performance of the prepared graphene-like film were confirmed by SEM, XRD and FT-IR. These unique materials were found to provide high specific capacitance and good cycling stability. The high specific capacitance of 254 F/g was obtained from cyclic voltammetry measurement at a scan rate of 10 mV/s. When the current density increased to 83.3 A/g, the specific capacitance values still remained 132 F/g. Meanwhile, the high powder density of 39.1 kW/kg was measured at energy density of 11.8 W-h/kg in 1 mol/L H2SO4 solution. Furthermore, at a constant scan rate of 50 mV/s, 97.02% of its capacitance was retained for 1000 cycles. These promising results were attributed to the unique assembly structure of graphene film and low contact resistance, which indicated their potential application to electrochemical capacitors.

Electrodeposition and corrosion behavior of nanostructured Ni-TiN composite films

The Ni-TiN nanocomposite film was successfully electrodeposited on brass copper substrates.The microstructures of the Ni-TiN nanocomposite film were investigated using scanning electron microscopy（SEM） and transmission electron microscopy（TEM）.Its average grain size was analyzed through X-ray diffraction（XRD）,and its anti-corrosion property was studied through potentiodynamic scanning curves and electrochemical impedance spectroscopy（EIS）.The results show that the morphology of Ni-TiN composite film is sensitively dependent on the electroplating current density,TiN nanoparticle concentration,solution stirring speed,bath temperature and pH value of solution.The average grain size of the optimized nanocomposite film is about 50 nm.Meanwhile,the Ni-TiN nanocomposite films are much more resistant to corrosion than pure Ni coatings.