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固定相位振动噪声对绝对重力测量的影响 被引量:1
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作者 要佳敏 庄伟 +5 位作者 冯金扬 王启宇 赵阳 王少凯 吴书清 李天初 《物理学报》 SCIE EI CAS CSCD 北大核心 2021年第21期401-413,共13页
绝对重力仪在地球物理等领域有着广泛的应用,其普遍采用激光干涉式或原子干涉式的测量原理.现有的绝对重力仪主要利用垂直隔振系统来减小地面振动对参考镜的影响以提升仪器的测量精密度.但在激光干涉式绝对重力仪中,隔振系统对仪器自振... 绝对重力仪在地球物理等领域有着广泛的应用,其普遍采用激光干涉式或原子干涉式的测量原理.现有的绝对重力仪主要利用垂直隔振系统来减小地面振动对参考镜的影响以提升仪器的测量精密度.但在激光干涉式绝对重力仪中,隔振系统对仪器自振效应等固定相位振动噪声的响应可能引入系统误差,即影响测量准确度;在原子干涉式绝对重力仪中也可能有尚未标定的振动来源通过隔振系统引入系统误差.本文对现有绝对重力仪中使用的4种典型隔振系统进行理论分析及仿真建模,以自振脉冲、地脉动和随机振动这3种典型信号为输入,分析激光干涉式绝对重力仪中隔振系统内参考镜的真实振动及其对重力测值的影响,并通过实验对比评估了其中两种系统在实际重力仪中的性能.结果表明,当仪器运行期间存在自振脉冲等固定相位振动噪声时,隔振系统中参考镜振动引入的系统误差可能达到10μGal (1μGal=1×10^(–8) m/s^(2))及以上.使用性能更好的隔振系统或在实际测量中对该系统误差进行修正,有望进一步提高国产激光干涉式绝对重力仪的测量精度. 展开更多
关键词 绝对重力仪 垂直隔系统 自振效应 系统误差
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Delayed-Dipole Domain Mode of Semi-Insulating GaAs Photoconductive Semiconductor Switches 被引量:1
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作者 田立强 施卫 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第6期819-822,共4页
A mode for the periodicity and weakening surge in semi-insulating GaAs photoconductive semiconductor switches is proposed based on the transferred-electron effect. It is shown that the periodicity and weakening surge ... A mode for the periodicity and weakening surge in semi-insulating GaAs photoconductive semiconductor switches is proposed based on the transferred-electron effect. It is shown that the periodicity and weakening surge is caused by the interaction between the self-excitation of the resonant circuit and transferred electron oscillation of the switch. The bias electric field (larger than Gunn threshold) across the switch is modulated by the AC elec-tric field,when the instantaneous bias electric field E is swinging below Gunn electric field threshold ET but grea-ter than the sustaining field Es (the minimum electric field required to support the domain) at the time of the do-main reaching the anode, and then the delayed-dipole domain mode of switch is obtained. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length prod-uct of 10^12 cm^-2,and the semi-insulating GaAs photoconductive semiconductor switch is essentially a type of pho-ton-activated charge domain device. 展开更多
关键词 semi-insulating GaAs photoconductive switch Gunn effect SELF-EXCITATION delayed-dipole domainmode
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Analysis of free vibration characteristic of steel-concrete composite box-girder considering shear lag and slip 被引量:9
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作者 周旺保 蒋丽忠 余志武 《Journal of Central South University》 SCIE EI CAS 2013年第9期2570-2577,共8页
Based on Hamilton principle,the governing differential equations and the corresponding boundary conditions of steel-concrete composite box girder with consideration of the shear lag effect meeting self equilibrated st... Based on Hamilton principle,the governing differential equations and the corresponding boundary conditions of steel-concrete composite box girder with consideration of the shear lag effect meeting self equilibrated stress,shear deformation,slip,as well as rotational inertia were induced.Therefore,natural frequency equations were obtained for the boundary types,such as simple support,cantilever,continuous girder and fixed support at two ends.The ANSYS finite element solutions were compared with the analytical solutions by calculation examples and the validity of the proposed approach was verified,which also shows the correctness of longitudinal warping displacement functions.Some meaningful conclusions for engineering design were obtained.The decrease extent of each order natural frequency of the steel-concrete composite box-girder is great under action of the shear lag effect.The shear-lag effect of steel-concrete composite box girder increases when frequency order rises,and increases while span-width ratio decreases.The proposed approach provides theoretical basis for further research of free vibration characteristics of steel-concrete composite box-girder. 展开更多
关键词 steel-concrete composite box-girder shear lag effect shear deformation SLIP free vibration
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Strong Ferromagnetic Coupling of {[Cu(Hpht)(N3)]·H2O}n with Simultaneous End-on Azido and Carboxylato Bridges: a First Principle Study
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作者 YAOKai-Lun ZUFeng-Xia +1 位作者 LIUZu-Li ZOUWei-Dong 《Communications in Theoretical Physics》 SCIE CAS CSCD 2005年第2期349-352,共4页
The compound {[Cu(Hpht)(N_3)]·H_2O}_n (Hpht = hydrogen phthalate) is formedby chains of copper atoms bridged simultaneously by syn-syn carboxylato and end-on azido bridges.Taking into account the large Cu-O(1)-C(... The compound {[Cu(Hpht)(N_3)]·H_2O}_n (Hpht = hydrogen phthalate) is formedby chains of copper atoms bridged simultaneously by syn-syn carboxylato and end-on azido bridges.Taking into account the large Cu-O(1)-C(7) bond angle of the single carboxylato bridge (131°), orthe large Cu-N(11)-Cu bond angle of the azido bridge (111.9°), a moderately intrachainantiferromagnetic behavior should be expected for the compound. This paper is devoted to examiningthe apparently anomalous intrachain ferromagnetic behavior of {[Cu(Hpht)(N_3)]·H_2O}_n, using firstprinciples within the full potential linearized augmented plane wave (FP-LAPW) method. The totalenergy, the density of states (DOS), and the spin distributions are obtained. The atomic spindistribution has been analyzed as resulting from the interplay of electron delocalization and spinpolarization. The DOS reveals a surprisingly strong exchange interaction between the d type orbitalsof the copper and the π molecular orbitals of the two ligands. 展开更多
关键词 ferromagnetic coupling spin polarization superexchange interaction
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Spin-Polarized Transport Through a Quantum Dot Coupled to Ferromagnetic Leads: Kondo Correlation Effect
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作者 MAJing DONGBing LEIXiao-Lin 《Communications in Theoretical Physics》 SCIE CAS CSCD 2005年第2期341-348,共8页
We investigate the linear and nonlinear transport through a single level quantum dot connected to two ferromagnetic leads in Kondo regime, using the slave-boson mean-field approach for finite on-site Coulomb repulsion... We investigate the linear and nonlinear transport through a single level quantum dot connected to two ferromagnetic leads in Kondo regime, using the slave-boson mean-field approach for finite on-site Coulomb repulsion. We find that for antiparallel alignment of the spin orientations in the leads, a single zero-bias Kondo peak always appears in the voltage-dependent differential conductance with peak height going down to zero as the polarization grows to P = 1.For parallel configuration, with increasing polarization from zero, the Kondo peak descends and greatly widens with the appearance of shoulders, and finally splits into two peaks on both sides of the bias voltage around P ~ 0.7 until disappearing at even larger polarization strength. At any spin orientation angle θ, the linear conductance generally drops with growing polarization strength. For a given finite polarization, the minimum linear conductance always appears at θ = π. 展开更多
关键词 quantum dot kondo correlation effect TRANSPORT
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