We theoretically investigate the wave-vector and temperature-dependent electron transport in a magneticnanostructure modulated by an applied bias.The large spin-polarization can be achieved in such a device,and the de...We theoretically investigate the wave-vector and temperature-dependent electron transport in a magneticnanostructure modulated by an applied bias.The large spin-polarization can be achieved in such a device,and the degreeof spin-polarization strongly depends on the transverse wave-vector and the temperature.These interesting propertiesmay be helpful to spin-polarize electrons into semiconductors,and this device may be used as a spin filter.展开更多
We study theoretically transport properties of two-dimenslonal electron gases through antiparallel magneticelectric barrier structures. Two kinds of magnetic barrier configurations are employed： one is that the stren...We study theoretically transport properties of two-dimenslonal electron gases through antiparallel magneticelectric barrier structures. Two kinds of magnetic barrier configurations are employed： one is that the strength of the double δ-functlon in opposite directions is equal and the other is that the strength is unequal Similarities and differences of electronic transports are presented. It is found that the transmission and the conductance depend strongly on the shape of the magnetic barrier and the height of the electric harrier. The results indicate that this system does not possess any spin filtering and spin polarization and electron gases can realize perfect resonant tunneling and wave-vector filtering properties. Moreover, the strength of the effect of the inhomogeneous magnetic field on the transport properties is discussed.展开更多
Electron spin-polarization modulation with a ferromagnetic strip of in-plane magnetization is analyzed in a hybrid ferromagnet/semiconductor filter device.The dependencies of electron spin-polarization on the strip’s...Electron spin-polarization modulation with a ferromagnetic strip of in-plane magnetization is analyzed in a hybrid ferromagnet/semiconductor filter device.The dependencies of electron spin-polarization on the strip’s magnetization strength,width and position have been systematically investigated.A novel magnetic control spin-polarization switch is proposed by inserting a ferromagnetic metal(FM)strip eccentric in relation to off the center of the spin filter,which produces the first energy level spin-polarization reversal.It is believed to be of significant importance for the realization of semiconductor spintronics multiple-value logic devices.展开更多
基金Supported by Hubei Province Key Laboratory of Systems Science in Metallurgical Process (Wuhan University of Science and Technology) under Grant No.C201018 the National Natural Science Foundation of China under Grant No.10805035
文摘We theoretically investigate the wave-vector and temperature-dependent electron transport in a magneticnanostructure modulated by an applied bias.The large spin-polarization can be achieved in such a device,and the degreeof spin-polarization strongly depends on the transverse wave-vector and the temperature.These interesting propertiesmay be helpful to spin-polarize electrons into semiconductors,and this device may be used as a spin filter.
基金The project supported by National Natural Science Foundation of China under Grant Nos. 19847004 and 10474025.
文摘We study theoretically transport properties of two-dimenslonal electron gases through antiparallel magneticelectric barrier structures. Two kinds of magnetic barrier configurations are employed： one is that the strength of the double δ-functlon in opposite directions is equal and the other is that the strength is unequal Similarities and differences of electronic transports are presented. It is found that the transmission and the conductance depend strongly on the shape of the magnetic barrier and the height of the electric harrier. The results indicate that this system does not possess any spin filtering and spin polarization and electron gases can realize perfect resonant tunneling and wave-vector filtering properties. Moreover, the strength of the effect of the inhomogeneous magnetic field on the transport properties is discussed.
基金supported by the National Basic Research Program of China(Grant No.2013CB934003)the State Key Laboratory of Software Development Environment(Grant No.SKLSDE-2013ZX-28)
文摘Electron spin-polarization modulation with a ferromagnetic strip of in-plane magnetization is analyzed in a hybrid ferromagnet/semiconductor filter device.The dependencies of electron spin-polarization on the strip’s magnetization strength,width and position have been systematically investigated.A novel magnetic control spin-polarization switch is proposed by inserting a ferromagnetic metal(FM)strip eccentric in relation to off the center of the spin filter,which produces the first energy level spin-polarization reversal.It is believed to be of significant importance for the realization of semiconductor spintronics multiple-value logic devices.
