自旋轨道矩调控的垂直磁各向异性四态存储器结构

利用氧化钽缓冲层对垂直各向异性钴铂多层膜磁性的影响,构想并验证了一种四态存储器单元.存储器器件包含两个区域,其中一区域的钴铂多层膜[Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)]直接生长在热氧化硅衬底上,另一个区域在磁性膜和衬底之间沉积了一层氧化钽作为缓冲层[TaO x(0.3 nm)/Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)],缓冲层导致两个区域的垂直磁各向异性不同.在固定的水平磁场下对器件施加与磁场同向的电流,由于电流引起的自旋轨道耦合力矩,两个区域的磁化取向均会发生翻转,且拥有不同的临界翻转电流.改变通过器件导电通道的电流脉冲形式,器件的磁化状态可以在4个态之间切换.本文器件的结构为设计自旋轨道矩存储器件提供了新的思路.

Spin Accumulation in a Rashba Nanoribbon

We investigate theoretically the spin accumulation in a Rashba spin-orbit coupling (SOC) nanoribbon nonadiabatically connected to a normal conductor.Both the nanoribbon and conductor are described by a hard-wall confining potential.Using the scattering matrix approach within the effective free-electron approximation,we have calculated the out-of-plane spin accumulation in the nanoribbon.It is found that the spin accumulation shifts toward the two edges of nanoribbon with the increasing of propagation modes.Specifically,as the Rashba SOC strength increases the spin accumulation in the nanoribbon will be enhanced and this result may suggest us a simple method to control the spin accumulation of the system by Rashba SOC strength.