Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the i...Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.展开更多
The conduct mechanism of the doped polymer is considered. In an asymmetrysystem composed of high polymer and doping conductive matte, chain or congeries framework will beformed between the conductive particles to impr...The conduct mechanism of the doped polymer is considered. In an asymmetrysystem composed of high polymer and doping conductive matte, chain or congeries framework will beformed between the conductive particles to improve the conductance characteristic. In thisprocession, the conductive particles interact to each other. In this paper, we describe theconductance of the doped polymer by Monte Carlo method. The results accord with the experimentsquite well. It can be concluded that there is an evident change of doped polymer from nonconductorto metal.展开更多
文摘Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.
文摘The conduct mechanism of the doped polymer is considered. In an asymmetrysystem composed of high polymer and doping conductive matte, chain or congeries framework will beformed between the conductive particles to improve the conductance characteristic. In thisprocession, the conductive particles interact to each other. In this paper, we describe theconductance of the doped polymer by Monte Carlo method. The results accord with the experimentsquite well. It can be concluded that there is an evident change of doped polymer from nonconductorto metal.
