Hydrogenated microcrystalline silicon (~c-Si:H) films with a high deposition rate of 1.2nm/s were prepared by hot-wire chemical vapor deposition (HWCVD). The growth-front roughening processes of the μc-Si..H fil...Hydrogenated microcrystalline silicon (~c-Si:H) films with a high deposition rate of 1.2nm/s were prepared by hot-wire chemical vapor deposition (HWCVD). The growth-front roughening processes of the μc-Si..H films were investi- gated by atomic force microscopy. According to the scaling theory, the growth exponent β≈0.67, the roughness exponent α≈0.80,and the dynamic exponent 1/z = 0.40 are obtained. These scaling exponents cannot be explained well by the known growth models. An attempt at Monte Carlo simulation has been made to describe the growth process of μc-Si: H film using a particle reemission model where the incident flux distribution,the type and concentration of growth radical, and sticking,reemission,shadowing mechanisms all contributed to the growing morphology.展开更多
文摘Hydrogenated microcrystalline silicon (~c-Si:H) films with a high deposition rate of 1.2nm/s were prepared by hot-wire chemical vapor deposition (HWCVD). The growth-front roughening processes of the μc-Si..H films were investi- gated by atomic force microscopy. According to the scaling theory, the growth exponent β≈0.67, the roughness exponent α≈0.80,and the dynamic exponent 1/z = 0.40 are obtained. These scaling exponents cannot be explained well by the known growth models. An attempt at Monte Carlo simulation has been made to describe the growth process of μc-Si: H film using a particle reemission model where the incident flux distribution,the type and concentration of growth radical, and sticking,reemission,shadowing mechanisms all contributed to the growing morphology.