Nano-hole patterned sapphire substrates （NHPSSs） were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography （LIL） combined with reactive ion etching （RIE...Nano-hole patterned sapphire substrates （NHPSSs） were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography （LIL） combined with reactive ion etching （RIE） and inductively coupled plasma （ICP） techniques. Gallium nitride （GaN）-based light emitting diode （LED） structure was grown on NHPSS by metal organic chemical vapor deposition （MOCVD）. Photoluminescence （PL） measurement was conducted to compare the luminescence efficiency of the GaN-based LED structure grown on NHPSS （＇NHPSS-LED） and that on unpatterned sapphire substrates （UPSS-LED）. Electroluminescence （EL） measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 mA. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of Gab/epilayer and light extraction efficiency of LEDs at the same time.展开更多
Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respec...Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.展开更多
基金supported by the National Key Scientific Instrument and Equipment Development Projects of China(No.2012YQ17000406)the Foshan-CAS Cooperated Projects(No.2012A01)
文摘Nano-hole patterned sapphire substrates （NHPSSs） were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography （LIL） combined with reactive ion etching （RIE） and inductively coupled plasma （ICP） techniques. Gallium nitride （GaN）-based light emitting diode （LED） structure was grown on NHPSS by metal organic chemical vapor deposition （MOCVD）. Photoluminescence （PL） measurement was conducted to compare the luminescence efficiency of the GaN-based LED structure grown on NHPSS （＇NHPSS-LED） and that on unpatterned sapphire substrates （UPSS-LED）. Electroluminescence （EL） measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 mA. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of Gab/epilayer and light extraction efficiency of LEDs at the same time.
基金supported by the National Natural Science Foundation of China(Nos.6127411311204212 and 61404091)+5 种基金the Program for New Century Excellent Talents in University(No.NCET-11-1064)the Tianjin Natural Science Foundation(Nos.13JCYBJC1570013JCZDJC2610014JCZDJC31500 and 14JCQNJC00800)the Tianjin Science and Technology Developmental Funds of Universities and Colleges(Nos.2010070320130701 and 20130702)
文摘Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.
