The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal dif...The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.展开更多
A laboratory scale downdraft biomass gasifier was designed to deliver a mechanical power of 4 kW and thermal power of about 15 kW. The gasifier was manufactured as a single piece having a water seal and cover. The gas...A laboratory scale downdraft biomass gasifier was designed to deliver a mechanical power of 4 kW and thermal power of about 15 kW. The gasifier was manufactured as a single piece having a water seal and cover. The gasifier was tested in natural downdraft and forced downdraft mode. Ignition of the fuel beneath the grate, during natural downdraft mode, using wood shavings as fuel, produced gas which burned with a blue flame for 15 minutes. Ignition at the throat, using either palm kernel shells or wood shavings, during the natural downdraft mode, the gasifier did not produce syngas. During the forced downdraft mode, fuel was ignited at the throat. Gasification was successful with the palm kernel shells, during forced downdraft, which produced gas which burned steadily with luminous flame for 15 minutes per kilogram of biomass fed. However, wood shavings experienced some bridging problems during the forced downdraft mode of operation. The fuel conversion rate of the gasifier, when using palm kernel shells as fuel in forced downdraft mode, was 4 kg/h. Forced downdraft mode of operation yielded better results and is the preferred operation of the gasifier.展开更多
In the present work, the photoluminescence （PL） character of single crystal sapphire （A1203） samples with and without im- plantation by 110 keV He and/or irradiation by 230-MeV Pb ions, as well as subsequently ann...In the present work, the photoluminescence （PL） character of single crystal sapphire （A1203） samples with and without im- plantation by 110 keV He and/or irradiation by 230-MeV Pb ions, as well as subsequently annealing at 600, 900 and 1100 K （TA） was studied. The modification of the structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra. The PL measurements showed that luminescence peaks located at 390, 413,450, and 564 nm appeared in irradiated samples. The luminescence peaks appeared at 360, 380, and 516 nm after annealing. Infrared spectra showed a broad- ening of the absorption band between 460 cm^-1 and 510 cm^-1, which indicated the formation of strongly damaged regions in the Al2O3 samples. The position shift of the absorption band in 1000-1300 cm^-1 tended towards to a higher wavelength.展开更多
Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respec...Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.展开更多
文摘The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.
文摘A laboratory scale downdraft biomass gasifier was designed to deliver a mechanical power of 4 kW and thermal power of about 15 kW. The gasifier was manufactured as a single piece having a water seal and cover. The gasifier was tested in natural downdraft and forced downdraft mode. Ignition of the fuel beneath the grate, during natural downdraft mode, using wood shavings as fuel, produced gas which burned with a blue flame for 15 minutes. Ignition at the throat, using either palm kernel shells or wood shavings, during the natural downdraft mode, the gasifier did not produce syngas. During the forced downdraft mode, fuel was ignited at the throat. Gasification was successful with the palm kernel shells, during forced downdraft, which produced gas which burned steadily with luminous flame for 15 minutes per kilogram of biomass fed. However, wood shavings experienced some bridging problems during the forced downdraft mode of operation. The fuel conversion rate of the gasifier, when using palm kernel shells as fuel in forced downdraft mode, was 4 kg/h. Forced downdraft mode of operation yielded better results and is the preferred operation of the gasifier.
基金supported by the National Natural Science Foundation of China (Grant Nos. 10705037 and 10975165)
文摘In the present work, the photoluminescence （PL） character of single crystal sapphire （A1203） samples with and without im- plantation by 110 keV He and/or irradiation by 230-MeV Pb ions, as well as subsequently annealing at 600, 900 and 1100 K （TA） was studied. The modification of the structure and optical properties induced by ion irradiation were analyzed by using PL and FTIR spectra. The PL measurements showed that luminescence peaks located at 390, 413,450, and 564 nm appeared in irradiated samples. The luminescence peaks appeared at 360, 380, and 516 nm after annealing. Infrared spectra showed a broad- ening of the absorption band between 460 cm^-1 and 510 cm^-1, which indicated the formation of strongly damaged regions in the Al2O3 samples. The position shift of the absorption band in 1000-1300 cm^-1 tended towards to a higher wavelength.
基金supported by the National Natural Science Foundation of China(Nos.6127411311204212 and 61404091)+5 种基金the Program for New Century Excellent Talents in University(No.NCET-11-1064)the Tianjin Natural Science Foundation(Nos.13JCYBJC1570013JCZDJC2610014JCZDJC31500 and 14JCQNJC00800)the Tianjin Science and Technology Developmental Funds of Universities and Colleges(Nos.2010070320130701 and 20130702)
文摘Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.
