A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is dis...A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is discussed from the aspects of noise optimization,impedance match,and forward gain.At 2.05GHz,the measured S 11 is -6.4dB, S 21 is 11dB with 3dB-BW of 300MHz,and NF is about 5.3dB.It indicates that comprehensive consideration of parasitics,package model,and reasonable process is necessary for RF circuit design.展开更多
Based on the analyses of the reported Gilbert mixers operating at low supply vol tage,a down-conversion mixer and an up-conversion mixer for 2.4GHz bluetooth transceiver are presented with the modified low voltage de...Based on the analyses of the reported Gilbert mixers operating at low supply vol tage,a down-conversion mixer and an up-conversion mixer for 2.4GHz bluetooth transceiver are presented with the modified low voltage design techniques,respe ctively.Feedback and current mirror techniques suitable for low voltage operatio n are used to improve the linearity of the up-conversion mixer,and folded-casc ode output stage is adopted to optimize the noise and conversion gain of the dow n-conversion mixer operating at low voltage.Based on 0.35μm CMOS technology,s imulations are performed with 2V supply voltage.The results show that 20dBm thir d-order intercept point (IIP3),87mV output signal amplitude are achieved for up -conversion mixer with about 3mA current;while 20dB conversion gain (CG),6.5nV /Hz input-referred noise,4.4dBm IIP3 are obtained for down-conversion mixer with about 3.5mA current.展开更多
文摘A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is discussed from the aspects of noise optimization,impedance match,and forward gain.At 2.05GHz,the measured S 11 is -6.4dB, S 21 is 11dB with 3dB-BW of 300MHz,and NF is about 5.3dB.It indicates that comprehensive consideration of parasitics,package model,and reasonable process is necessary for RF circuit design.
文摘Based on the analyses of the reported Gilbert mixers operating at low supply vol tage,a down-conversion mixer and an up-conversion mixer for 2.4GHz bluetooth transceiver are presented with the modified low voltage design techniques,respe ctively.Feedback and current mirror techniques suitable for low voltage operatio n are used to improve the linearity of the up-conversion mixer,and folded-casc ode output stage is adopted to optimize the noise and conversion gain of the dow n-conversion mixer operating at low voltage.Based on 0.35μm CMOS technology,s imulations are performed with 2V supply voltage.The results show that 20dBm thir d-order intercept point (IIP3),87mV output signal amplitude are achieved for up -conversion mixer with about 3mA current;while 20dB conversion gain (CG),6.5nV /Hz input-referred noise,4.4dBm IIP3 are obtained for down-conversion mixer with about 3.5mA current.
