Transparent zinc oxide thin film transistors (ZnO-TFTs) with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 fil...Transparent zinc oxide thin film transistors (ZnO-TFTs) with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 films served as the gate insulator layer. We found that the ZnO-TFTs with bottom-gate structure have better electrical performance than those with top-gate structure. The bottom-gate ZnO-TFTs operate as an n-channel enhancement mode, which have clear pinch off and saturation characteristics. The field effect mobility, threshold voltage, and the current on/off ratio were determined to be 18.4cm^2/(V ·s), - 0. 5V and 10^4 , respectively. Meanwhile, the top-gate ZnO-TFTs exhibit n-chan- nel depletion mode operation and no saturation characteristics were detected. The electrical difference of the devices may be due to the different character of the interface between the channel and insulator layers. The two transistors types have high transparency in the visible light region.展开更多
We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS(001) thin films with different Mn doping concentrations using the total energy density functional theory. The en...We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS(001) thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.展开更多
Semiconductor-type TiO2 oxygen sensing thin films were synthesized using tetrabutyl titanate (Ti (OBu)4) as precursor and diethanolamine (DEA) as complexing agent by the sol-get process. The porous and oxygen se...Semiconductor-type TiO2 oxygen sensing thin films were synthesized using tetrabutyl titanate (Ti (OBu)4) as precursor and diethanolamine (DEA) as complexing agent by the sol-get process. The porous and oxygen sensing TiO2 films were obtained by the addition of polyethylene glycol (PEG). The micrographs of scanning electron microscope (SEM) show that the pores of the sample about 400-600 nm in size with PEG(2 000 g/mol) are larger than those about 300 nm in size with PEG( 1 000 g/mol), while the density of pores is lower. The results also indicate that increasing the content of PEG properly is beneficial to the formation of porous structure. With the increasing content of PEG from 0 g to 2.5 g, the oxygen sensitivity increases from 330 to more than 1 000 at 800 ℃, from 170 to more than 1 000 at 900℃, and the response time to O2 and H2 are about 1.5 s and less than 1s, respectively.展开更多
With in situ optical emission spectroscopy (OES) diagnosis on VHF-generated H2 + SiH4 plasmas,and with the measurements of deposition rate and structure of μc-Si. H thin films fabricated with VHFPECVD technique at...With in situ optical emission spectroscopy (OES) diagnosis on VHF-generated H2 + SiH4 plasmas,and with the measurements of deposition rate and structure of μc-Si. H thin films fabricated with VHFPECVD technique at different substracte temperature, influence of substrate temperature on the deposition of μc-Si.H thin film and on its structural properties have been investigated. The results show that with the increase of substrate temperature,the crystalline volume fraction Xc and average grain size d are enhanced monotonously, but the deposition rate increases firstly and then decreases. The optimized substrate temperature for μc-Si:H thin films deposition under our current growth system is about 210 ℃ ,at which deposition rate O. 8 nm/s of pc-Si;H thin film with Xc-60% and d-9 nm can be obtained.展开更多
The theoretical expression of the relationship between optimumdoping content and crystal structure is presented as well as thepreparation methods. By using this expression, the optimum dopingcontent of silicon-coped b...The theoretical expression of the relationship between optimumdoping content and crystal structure is presented as well as thepreparation methods. By using this expression, the optimum dopingcontent of silicon-coped boron carbide thin film is calculated. Thequantitative calculation value is consistent with the experimentalresults. This theoretical expression is also appropriate to resolvethe optimum doping content for Other electric materials.展开更多
MBE growth of ZnS_xSe_1-x thin films on ITO coated glass substrate s were carried o ut using ZnS and Se sources with the substrate temperature ranging from 270℃ to 330℃. The XRD θ/2θ spectra resulted from these...MBE growth of ZnS_xSe_1-x thin films on ITO coated glass substrate s were carried o ut using ZnS and Se sources with the substrate temperature ranging from 270℃ to 330℃. The XRD θ/2θ spectra resulted from these films indicated that the as-gro wn polycrystalline ZnS_xSe_1-x thin films had a preferred orientat ion along the (1 11) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD laye r peaks showed strong growth temperature dependence, with the optimized temperat ure being about 290℃. Both AFM and TEM measurements of these thin films also in dicated a similar growth temperature dependence. High quality ZnS_xSe_1- x thin fil m grown at the optimized temperature had the smoothest surface with lowest RMS v alue of 1.2 nm and TEM cross-sectional micrograph showing a well defined column ar structure.展开更多
Patterned porous silicon (PS) films were synthesised by using bydrogen ion implantation technique and typical electrochemical anodic etching method.The surface morphology and characteristics of the PS films were cha...Patterned porous silicon (PS) films were synthesised by using bydrogen ion implantation technique and typical electrochemical anodic etching method.The surface morphology and characteristics of the PS films were characterized by scanning electron microscopy (SEM),X-ray diffraction(XRD),and atomic force microscopy (AFM).The efficient electron field emission with low turn-on field of about 3.5V/μm was obtained at current density of 0.1μA/cm^2.The electron field emission current density from the patterned PS films reached 1mA/cm^2 under and applied field of about 12.5V/μm.The experimental results show that the patterned PS films are of certain practical significance and are valuable for flat panel displays.展开更多
A new spherical triangular finite element based on shallow shell formulation is developed in this paper. The element has six degrees of freedom at each comer node, five of which are the essential external degrees of f...A new spherical triangular finite element based on shallow shell formulation is developed in this paper. The element has six degrees of freedom at each comer node, five of which are the essential external degrees of freedom and the additional sixth is associated with the in-plane shell rotation. The displacement fields of the element satisfy the exact requirement of rigid body modes of motion. The element is based on independent strain assumption insofar as it is allowed by the compatibility equations. The element developed herein is first validated by applying it to the analysis of a benchmark problem involving a standard spherical shell with simply supported edges. The results of the analysis showed that reasonably accurate results were obtained even when modeling the shells using fewer elements compared to other shell element types. The element is then used in a finite element model to analyze polygon shaped spherical roof structures. The distribution of the various components of deflection and stress is obtained. Furthermore, the effect of introducing circular arched beams as stiffeners spanning the two diagonally opposite end comers is investigated. It is found that the stiffeners reduced the deflections and the stresses in the roof structure by considerable value.展开更多
AlN films with preferred c-axis orientation are deposited on Si substrates using the radio frequency(RF) magnetron sputtering method.The post-processing is carried out under the cooling conditions including high vacuu...AlN films with preferred c-axis orientation are deposited on Si substrates using the radio frequency(RF) magnetron sputtering method.The post-processing is carried out under the cooling conditions including high vacuum,low vacuum under deposition gas ambient and low vacuum under dynamic N2 ambient.Structures and morphologies of the films are analyzed by X-ray diffraction(XRD) and atomic force microscopy(AFM).The hardness and Young's modulus are investigated by the nanoindenter.The experimental results indicate that the(100) and(110) peak intensities decrease in the XRD spectra and the root-mean-square of roughness(Rrms) of the film decreases gradually with the increase of the cooling rate.The maximum values of the hardness and Young modulus are obtained by cooling in low vacuum under deposition gas ambient.The reason for orientation variation of the films is explained from the perspective of the Al-N bond formation.展开更多
In this work, the influence of crystal structure on the friction coefficient of zinc oxide (ZnO) films was studied. The ZnO films were deposited on a Si (100) substrate using an atomic layer deposition process, an...In this work, the influence of crystal structure on the friction coefficient of zinc oxide (ZnO) films was studied. The ZnO films were deposited on a Si (100) substrate using an atomic layer deposition process, and the crystal structure of the ZnO films was changed by adjusting the substrate temperature. The surface morphology and the crystal structure of the ZnO films were meas- ured by an atomic force microscope and an X-ray diffractometer, respectively, and the friction coefficient of the ZnO fi)ms was measured by a ball-on-disk dry sliding tester. The results show that the ZnO films deposited at substrate temperatures below 200~C are dominated by (100), (002) and (101)-orientated crystals, while the ZnO films deposited at substrate temperatures above 250~C are dominated by (002)-orientated crystals, and that the crystal structure influences the friction coefficient of ZnO films greatly. The ZnO films with (002)-orientated crystals possess a larger friction coefficient than those with other orientated crystals. In order to verify this conclusion, we measured the friction behavior of the ZnO single crystals with different orienta- tions. The results are consistent well with our conclusion.展开更多
文摘Transparent zinc oxide thin film transistors (ZnO-TFTs) with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 films served as the gate insulator layer. We found that the ZnO-TFTs with bottom-gate structure have better electrical performance than those with top-gate structure. The bottom-gate ZnO-TFTs operate as an n-channel enhancement mode, which have clear pinch off and saturation characteristics. The field effect mobility, threshold voltage, and the current on/off ratio were determined to be 18.4cm^2/(V ·s), - 0. 5V and 10^4 , respectively. Meanwhile, the top-gate ZnO-TFTs exhibit n-chan- nel depletion mode operation and no saturation characteristics were detected. The electrical difference of the devices may be due to the different character of the interface between the channel and insulator layers. The two transistors types have high transparency in the visible light region.
基金This work was supported by the National Natural Science Foundation of China (No.60776039 and No.60406005), the Natural Science Foundation of Beijing (No.3062016), and the School Foundation of Beijing Jiaotong University.
文摘We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS(001) thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.
基金National Natural Science Foundation of China (No 59995520)
文摘Semiconductor-type TiO2 oxygen sensing thin films were synthesized using tetrabutyl titanate (Ti (OBu)4) as precursor and diethanolamine (DEA) as complexing agent by the sol-get process. The porous and oxygen sensing TiO2 films were obtained by the addition of polyethylene glycol (PEG). The micrographs of scanning electron microscope (SEM) show that the pores of the sample about 400-600 nm in size with PEG(2 000 g/mol) are larger than those about 300 nm in size with PEG( 1 000 g/mol), while the density of pores is lower. The results also indicate that increasing the content of PEG properly is beneficial to the formation of porous structure. With the increasing content of PEG from 0 g to 2.5 g, the oxygen sensitivity increases from 330 to more than 1 000 at 800 ℃, from 170 to more than 1 000 at 900℃, and the response time to O2 and H2 are about 1.5 s and less than 1s, respectively.
文摘With in situ optical emission spectroscopy (OES) diagnosis on VHF-generated H2 + SiH4 plasmas,and with the measurements of deposition rate and structure of μc-Si. H thin films fabricated with VHFPECVD technique at different substracte temperature, influence of substrate temperature on the deposition of μc-Si.H thin film and on its structural properties have been investigated. The results show that with the increase of substrate temperature,the crystalline volume fraction Xc and average grain size d are enhanced monotonously, but the deposition rate increases firstly and then decreases. The optimized substrate temperature for μc-Si:H thin films deposition under our current growth system is about 210 ℃ ,at which deposition rate O. 8 nm/s of pc-Si;H thin film with Xc-60% and d-9 nm can be obtained.
文摘The theoretical expression of the relationship between optimumdoping content and crystal structure is presented as well as thepreparation methods. By using this expression, the optimum dopingcontent of silicon-coped boron carbide thin film is calculated. Thequantitative calculation value is consistent with the experimentalresults. This theoretical expression is also appropriate to resolvethe optimum doping content for Other electric materials.
文摘MBE growth of ZnS_xSe_1-x thin films on ITO coated glass substrate s were carried o ut using ZnS and Se sources with the substrate temperature ranging from 270℃ to 330℃. The XRD θ/2θ spectra resulted from these films indicated that the as-gro wn polycrystalline ZnS_xSe_1-x thin films had a preferred orientat ion along the (1 11) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD laye r peaks showed strong growth temperature dependence, with the optimized temperat ure being about 290℃. Both AFM and TEM measurements of these thin films also in dicated a similar growth temperature dependence. High quality ZnS_xSe_1- x thin fil m grown at the optimized temperature had the smoothest surface with lowest RMS v alue of 1.2 nm and TEM cross-sectional micrograph showing a well defined column ar structure.
基金National Natural Science Foundation of China (60476004) Foundation of Graduate Students of East ChinaNormal University(ECNU2005) Foundation of State Key Laboratory of Advanced Technology for MaterialsSynthesis and Processing( Wuhan University of Tech
文摘Patterned porous silicon (PS) films were synthesised by using bydrogen ion implantation technique and typical electrochemical anodic etching method.The surface morphology and characteristics of the PS films were characterized by scanning electron microscopy (SEM),X-ray diffraction(XRD),and atomic force microscopy (AFM).The efficient electron field emission with low turn-on field of about 3.5V/μm was obtained at current density of 0.1μA/cm^2.The electron field emission current density from the patterned PS films reached 1mA/cm^2 under and applied field of about 12.5V/μm.The experimental results show that the patterned PS films are of certain practical significance and are valuable for flat panel displays.
文摘A new spherical triangular finite element based on shallow shell formulation is developed in this paper. The element has six degrees of freedom at each comer node, five of which are the essential external degrees of freedom and the additional sixth is associated with the in-plane shell rotation. The displacement fields of the element satisfy the exact requirement of rigid body modes of motion. The element is based on independent strain assumption insofar as it is allowed by the compatibility equations. The element developed herein is first validated by applying it to the analysis of a benchmark problem involving a standard spherical shell with simply supported edges. The results of the analysis showed that reasonably accurate results were obtained even when modeling the shells using fewer elements compared to other shell element types. The element is then used in a finite element model to analyze polygon shaped spherical roof structures. The distribution of the various components of deflection and stress is obtained. Furthermore, the effect of introducing circular arched beams as stiffeners spanning the two diagonally opposite end comers is investigated. It is found that the stiffeners reduced the deflections and the stresses in the roof structure by considerable value.
基金supported by the National Natural Science Foundation of China (No.50972105)Tianjin Natural Science Foundation (Nos.09JCZDJC16500,08JCZDJC22700 and 10SYSYJC27700)
文摘AlN films with preferred c-axis orientation are deposited on Si substrates using the radio frequency(RF) magnetron sputtering method.The post-processing is carried out under the cooling conditions including high vacuum,low vacuum under deposition gas ambient and low vacuum under dynamic N2 ambient.Structures and morphologies of the films are analyzed by X-ray diffraction(XRD) and atomic force microscopy(AFM).The hardness and Young's modulus are investigated by the nanoindenter.The experimental results indicate that the(100) and(110) peak intensities decrease in the XRD spectra and the root-mean-square of roughness(Rrms) of the film decreases gradually with the increase of the cooling rate.The maximum values of the hardness and Young modulus are obtained by cooling in low vacuum under deposition gas ambient.The reason for orientation variation of the films is explained from the perspective of the Al-N bond formation.
基金supported by the National Science Fund for Distinguished Young Scholars(Grant No.50825501)the Science Fund for Creative Research Groups(Grant No.51321092)+1 种基金the National Natural Science Foundation of China(Grant Nos.51335005 and 91323302)the National Science and Technology Major Project(Grant No.2008ZX02104-001)
文摘In this work, the influence of crystal structure on the friction coefficient of zinc oxide (ZnO) films was studied. The ZnO films were deposited on a Si (100) substrate using an atomic layer deposition process, and the crystal structure of the ZnO films was changed by adjusting the substrate temperature. The surface morphology and the crystal structure of the ZnO films were meas- ured by an atomic force microscope and an X-ray diffractometer, respectively, and the friction coefficient of the ZnO fi)ms was measured by a ball-on-disk dry sliding tester. The results show that the ZnO films deposited at substrate temperatures below 200~C are dominated by (100), (002) and (101)-orientated crystals, while the ZnO films deposited at substrate temperatures above 250~C are dominated by (002)-orientated crystals, and that the crystal structure influences the friction coefficient of ZnO films greatly. The ZnO films with (002)-orientated crystals possess a larger friction coefficient than those with other orientated crystals. In order to verify this conclusion, we measured the friction behavior of the ZnO single crystals with different orienta- tions. The results are consistent well with our conclusion.