薄体结构温度场的高阶边界元分析

分析了二维问题边界元法3节点二次单元的几何特征,区分和定义了源点相对高阶单元的Ⅰ型和Ⅱ型接近度.针对二维位势问题高阶边界元中奇异积分核,构造出具有相同Ⅱ型几乎奇异性的近似核函数,在几乎奇异积分单元上分离出积分核中主导的奇异函数部分.原积分核扣除其近似核函数后消除几乎奇异性,成为正则积分核函数,并采用常规Gauss数值方法计算该正则积分;对奇异核函数的积分推导出解析公式,从而建立了一种新的边界元法高阶单元几乎奇异积分半解析算法.应用该算法计算了二维薄体结构温度场算例,计算结果表明高阶单元半解析算法能充分发挥边界元法优势,显著提高计算精度.

位势边界元法中的边界层效应与薄体结构

边界层效应与薄体结构问题的数值分析是边界元法的难点之一,其实质是近奇异积分的精确计算.现有的处理近奇异积分的多数方法,特别是精确积分法,通常考虑的是线性几何单元.然而,多数工程问题的几何区域是十分复杂的,采用高阶几何单元近似显然能更好地逼近问题的真实边界,所得结果也将更加精确.但由于高阶几何单元下的雅可比及被积函数形式的复杂性,相应的近奇异积分的精确计算一直是一个非常困难的问题.提出一种新的反插值思想和方法,将被积函数中的规则部分用反插值多项式近似,从而导出计算近奇异积分的精确表达式.数值算例表明,该算法稳定,效率高,在不增加计算量的前提下,极大地改进了近奇异积分计算的精度,成功地解决了边界层效应与薄体结构问题.

精确几何单元下弹性薄体结构问题的边界元法分析

对圆弧单元下的几乎奇异积分,采用变量替换法进行正则化,然后采用通常的高斯求积公式进行计算,可获得相当高的计算精度,即使是超薄的薄体结构,方法仍然十分有效.

薄体结构热弹性力学分析的边界元法

针对边界元法分析薄体结构和求解近边界物理参量时遇到的几乎奇异积分难以处理的困难,将几乎奇异积分划分为两种类型,分别通过分部积分把引起积分几乎奇异的参量变换至积分号之外,从而建立了一个新的正则化算法,成功计算了几乎强奇异和超奇异积分。文中用该算法分析了二维热弹性力学薄体问题,算例证明了本法的有效性。

二维薄体结构位势问题的虚边界元法

提出求解平面位势薄体问题的虚边界元法,给出求解薄体问题的新的途径,验证了虚实边界的距离公式,阐释距离选取与边界离散单元数有关.数值算例表明,所取得的数值结果与精确解非常吻合,即虚边界元法是求解薄体结构问题的强有力工具,且方法简单、易于程序设计.

三维弹性薄体和涂层结构问题的虚边界元法

为了研究薄体和涂层结构,提出求解三维弹性薄体和涂层问题的虚边界元法,建立了弹性涂层基本列式,给出了求解弹性薄体和涂层结构问题的新方法。数值算例表明,虚实边界的距离选取与边界离散单元数有关,数值结果与精确解结果一致,方法简单、易于程序设计。

薄体位势问题边界元法中的解析积分算法

薄体结构的数值分析是边界元法的难点问题之一。该文导出了一种完全解析积分算法,用这种算法计算了薄体平面位势问题边界元法中出现的几乎弱奇异、强奇异和超奇异积分。当边界离散为一系列线性单元,边界积分方程离散计算的积分可归纳为三种形式。对薄体问题,源点与积分单元距离通常相距很近,这些积分产生显著几乎奇异性,直接采用常规高斯积分不能有效计算。为此该文导出了这些几乎奇异积分的全解析计算公式。按源点与单元的距离是否为零,公式分两种情况。新算法采用全解析积分公式处理几乎奇异积分,首先精确计算出薄体问题边界未知位势和法向位势梯度,然后再进一步计算了域内点的物理参量。算例表明该文算法可处理狭长比为1.E-08的薄体问题,显示了边界元法分析薄体问题具有独特的优势。

三维薄结构热传导问题分层二次元方程的多水平方法

在利用有限元法对三维薄结构进行分析时,为了减少单元数目,常采用六面体薄单元,相应的高阶单元在计算精度、抗畸变程度等方面具有明显优势.但与低阶元相比,高阶单元需要更多的计算机存储空间,离散化线性系统具有更高的计算复杂性,并且系数矩阵是严重病态的,采用通常的求解方法其效率将大大降低.该文针对三维薄结构稳态热传导问题,利用局部块Gauss-Seidel光滑子和基于"距离矩阵"的DAMG法,为其分层二次元离散系统设计了一种具有更好计算效率和鲁棒性(robustness)的多水平方法.由于采用了分层基,程序实现中不再需要建立判定未知数变量指标与所属几何节点类型对应关系的代数判据,网格转换算子的构造也变得非常简单,从而大大提高了运算效率.数值实验结果验证了该方法的有效性和鲁棒性.

混凝土路面和地坪控制爆破技术

根据炸药爆破后爆生气体膨胀推力破岩理论,结合混凝土路面和地坪等薄体结构物的特点,在拆除爆破中采用大孔距、倾斜钻孔、炮孔超深、增大炸药单耗及加强覆盖防护等一系列技术措施,取得了良好的爆破破碎破裂效果。

Fabrication of Bottom-Gate and Top-Gate Transparent ZnO Thin Film Transistors

Transparent zinc oxide thin film transistors （ZnO-TFTs） with bottom-gate and top-gate structures were constructed on 50mm silica glass substrates. The ZnO films were deposited by RF magnetron sputtering and SiO2 films served as the gate insulator layer. We found that the ZnO-TFTs with bottom-gate structure have better electrical performance than those with top-gate structure. The bottom-gate ZnO-TFTs operate as an n-channel enhancement mode, which have clear pinch off and saturation characteristics. The field effect mobility, threshold voltage, and the current on/off ratio were determined to be 18.4cm^2/（V ·s）, - 0. 5V and 10^4 , respectively. Meanwhile, the top-gate ZnO-TFTs exhibit n-chan- nel depletion mode operation and no saturation characteristics were detected. The electrical difference of the devices may be due to the different character of the interface between the channel and insulator layers. The two transistors types have high transparency in the visible light region.

Energy Stabilities, Magnetic Properties, and Electronic Structures of Diluted Magnetic Semiconductor Zn1-xMnxS（001） Thin Films

We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.

Structure and Oxygen Sensing Properties of TiO_2 Porous Semiconductor Thin Films

Semiconductor-type TiO2 oxygen sensing thin films were synthesized using tetrabutyl titanate （Ti （OBu）4） as precursor and diethanolamine （DEA） as complexing agent by the sol-get process. The porous and oxygen sensing TiO2 films were obtained by the addition of polyethylene glycol （PEG）. The micrographs of scanning electron microscope （SEM） show that the pores of the sample about 400-600 nm in size with PEG（2 000 g/mol） are larger than those about 300 nm in size with PEG（ 1 000 g/mol）, while the density of pores is lower. The results also indicate that increasing the content of PEG properly is beneficial to the formation of porous structure. With the increasing content of PEG from 0 g to 2.5 g, the oxygen sensitivity increases from 330 to more than 1 000 at 800 ℃, from 170 to more than 1 000 at 900℃, and the response time to O2 and H2 are about 1.5 s and less than 1s, respectively.

Influence of substrate temperature on the deposition and structural properties of μc-Si:H thin films fabricated with VHF-PECVD

With in situ optical emission spectroscopy （OES） diagnosis on VHF-generated H2 ＋ SiH4 plasmas,and with the measurements of deposition rate and structure of μc-Si. H thin films fabricated with VHFPECVD technique at different substracte temperature, influence of substrate temperature on the deposition of μc-Si.H thin film and on its structural properties have been investigated. The results show that with the increase of substrate temperature,the crystalline volume fraction Xc and average grain size d are enhanced monotonously, but the deposition rate increases firstly and then decreases. The optimized substrate temperature for μc-Si：H thin films deposition under our current growth system is about 210 ℃ ,at which deposition rate O. 8 nm/s of pc-Si;H thin film with Xc-60% and d-9 nm can be obtained.

Theoretical Calculation on Optimum Si-doping Content in Boron Carbide Thin Film

The theoretical expression of the relationship between optimumdoping content and crystal structure is presented as well as thepreparation methods. By using this expression, the optimum dopingcontent of silicon-coped boron carbide thin film is calculated. Thequantitative calculation value is consistent with the experimentalresults. This theoretical expression is also appropriate to resolvethe optimum doping content for Other electric materials.

Polycrystalline ZnSx Se1—x thin films deposited on ITO glass by MBE

MBE growth of ZnS_xSe_1-x thin films on ITO coated glass substrate s were carried o ut using ZnS and Se sources with the substrate temperature ranging from 270℃ to 330℃. The XRD θ/2θ spectra resulted from these films indicated that the as-gro wn polycrystalline ZnS_xSe_1-x thin films had a preferred orientat ion along the (1 11) planes. The evaluated crystal sizes as deduced from the FWHM of the XRD laye r peaks showed strong growth temperature dependence, with the optimized temperat ure being about 290℃. Both AFM and TEM measurements of these thin films also in dicated a similar growth temperature dependence. High quality ZnS_xSe_1- x thin fil m grown at the optimized temperature had the smoothest surface with lowest RMS v alue of 1.2 nm and TEM cross-sectional micrograph showing a well defined column ar structure.

Electron Field Emission from Patterned Porous Silicon Film

Patterned porous silicon （PS） films were synthesised by using bydrogen ion implantation technique and typical electrochemical anodic etching method.The surface morphology and characteristics of the PS films were characterized by scanning electron microscopy （SEM）,X-ray diffraction（XRD）,and atomic force microscopy （AFM）.The efficient electron field emission with low turn-on field of about 3.5V/μm was obtained at current density of 0.1μA/cm^2.The electron field emission current density from the patterned PS films reached 1mA/cm^2 under and applied field of about 12.5V/μm.The experimental results show that the patterned PS films are of certain practical significance and are valuable for flat panel displays.

Finite Element Analysis of Polygon Shaped Shell Roof

A new spherical triangular finite element based on shallow shell formulation is developed in this paper. The element has six degrees of freedom at each comer node, five of which are the essential external degrees of freedom and the additional sixth is associated with the in-plane shell rotation. The displacement fields of the element satisfy the exact requirement of rigid body modes of motion. The element is based on independent strain assumption insofar as it is allowed by the compatibility equations. The element developed herein is first validated by applying it to the analysis of a benchmark problem involving a standard spherical shell with simply supported edges. The results of the analysis showed that reasonably accurate results were obtained even when modeling the shells using fewer elements compared to other shell element types. The element is then used in a finite element model to analyze polygon shaped spherical roof structures. The distribution of the various components of deflection and stress is obtained. Furthermore, the effect of introducing circular arched beams as stiffeners spanning the two diagonally opposite end comers is investigated. It is found that the stiffeners reduced the deflections and the stresses in the roof structure by considerable value.

Impact of cooling condition on the crystal structure and surface quality of preferred c-axis-oriented AlN films for SAW devices

AlN films with preferred c-axis orientation are deposited on Si substrates using the radio frequency(RF) magnetron sputtering method.The post-processing is carried out under the cooling conditions including high vacuum,low vacuum under deposition gas ambient and low vacuum under dynamic N2 ambient.Structures and morphologies of the films are analyzed by X-ray diffraction(XRD) and atomic force microscopy(AFM).The hardness and Young's modulus are investigated by the nanoindenter.The experimental results indicate that the(100) and(110) peak intensities decrease in the XRD spectra and the root-mean-square of roughness(Rrms) of the film decreases gradually with the increase of the cooling rate.The maximum values of the hardness and Young modulus are obtained by cooling in low vacuum under deposition gas ambient.The reason for orientation variation of the films is explained from the perspective of the Al-N bond formation.

Influence of crystal structure on friction coefficient of ZnO films prepared by atomic layer deposition

In this work, the influence of crystal structure on the friction coefficient of zinc oxide （ZnO） films was studied. The ZnO films were deposited on a Si （100） substrate using an atomic layer deposition process, and the crystal structure of the ZnO films was changed by adjusting the substrate temperature. The surface morphology and the crystal structure of the ZnO films were meas- ured by an atomic force microscope and an X-ray diffractometer, respectively, and the friction coefficient of the ZnO fi）ms was measured by a ball-on-disk dry sliding tester. The results show that the ZnO films deposited at substrate temperatures below 200~C are dominated by （100）, （002） and （101）-orientated crystals, while the ZnO films deposited at substrate temperatures above 250~C are dominated by （002）-orientated crystals, and that the crystal structure influences the friction coefficient of ZnO films greatly. The ZnO films with （002）-orientated crystals possess a larger friction coefficient than those with other orientated crystals. In order to verify this conclusion, we measured the friction behavior of the ZnO single crystals with different orienta- tions. The results are consistent well with our conclusion.