First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO_3

The electronic structure,including band structure,density of states （DOS）, and partial density of states of SrTi1-xSbxO3 with x = 0,0. 125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-soft pseudo-potential technology based on density function theory. The calculated results reveal that due to the electron doping,the Fermi level moves into the conduction bands for SrTi1-xSbxO3 with x = 0. 125 and the system shows metallic behavior. In addition, the DOS moves towards low energy and the optical band gap is broadened. The wide band gap and the low density of the states in the conduction band result in the transparency of the films.

梨园芳菲尽喧妍——记河北梆子演员贾兰欣

仲夏的一个夜晚,是一句《谢瑶环》中的“起板”——那犹如行云流水优美旋律的诱惑,使我踏进了衡水地区梆子剧团著名旦角演员贾兰欣的家门。厅堂里她正十分投入地和着爱人柳风翔悠扬的板胡声练唱,竟然对来人毫无察觉。“忽听的大堂上一声喊。

Analysis and simulation of lateral PIN photodiode gated by transparent electrode fabricated on fully-depleted SOI film

A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo4o-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark （dark current） and under 570 nm illumination （photo current） were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 /am. The results show that the photo-to-dark current ratio is 2.0×10^7, with dark current of around 5×10^-4 pA under VGK=0.6 V, PrN=5 mW/cm2, for a total area of 10μm×10μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.

Properties of multilayer gallium and aluminum doped ZnO(GZO/AZO) transparent thin films deposited by pulsed laser deposition process

Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO （1：1） thin film deposited at 400 ~C shows the electrical resistivity of 4.18 x 10 4 ~.cm, an electron concentration of 7.5 x 1020/cm3, and carrier mobility of 25.4 cm2/（V.s）. The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the AI ratio.

Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Different Pyrolysis Temperatures

Boron-doped zinc oxide transparent （BZO） films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.

對於成年補習教育的意見

应教育部教育方案编制委员会的徵求而作(上略)我所要说的意见,是根据次列的几个问题,希望得一个相当的解决: (一)成年补习教育的一般目的和设教的分类是怎样? (二)实施成年补习教育时,对於各类教育,应如何联贯?如何利用? (三)成年补习,何以教育必要?要设补习学校,应该有若干种? (四)实施成年补习教育时,对于师资,经费两项,有没有格外简便的方法,来补助公家能力之所不逮?除去对於上列四项问题,说明一些意见,此外关于乡村教育的,还有一篇"富教合一主义"的杜撰不通的题名和文字,(载本刊一○八期)关于都市补习教育的,还有一篇"中华职业教育社"附设"职工补习晨校"

Structural,Electrical,and Optical Properties of Transparent Conductive Al-Doped ZnO Films Prepared by RF Magnetron Sputtering

Highly conductive transparent Al-doped zinc oxide （AZO） films with highly （002）-preferred orientation were successfully deposited on glass substrates at room temperature by RF magnetron sputtering. Optimization of deposition parameters was based on sputtering RF power and Ar pressure in the vacuum chamber. AZO films of 180nm with an electrical resistivity as low as 2.68 × 10^-3 Ω· cm and an average optical transmission of 90% in the visible range were obtained at RF power of 250W and Ar pressure of 1.2Pa. The effect of chemisorption of oxygen on the grain boundary would capture electrons from conduction band and lead the formation of potential barriers among the crystallites,which will influence the electric property of the AZO thin films. The films have satisfactory properties of low resistance and high transmittance for application as transparent conductive electrodes in light emitting diodes （LEDs） and solar cells.

读雨

飘雨的日子,我阅读雨的精魂,看雨帘中跳荡的红花伞,雨韵袅袅,是透明诱人的那种。在一片迷离中,红花伞尽情地跳动,雨的缜密与伞的起伏相映成画,她的诱人宛如薄明的爱,让你想到恋人,想到保护,想到母亲。

Transparent conductive reduced graphene oxide thin films produced by spray coating

Reduced graphene oxide thin films were fabricated on quartz by spray coating method using a stable dispersion of reduced graphene oxide in N,N-Dimethylformamide.The dispersion was produced by chemical reduction of graphene oxide,and the film thickness was controlled with the amount of spray volume.AFM measurements revealed that the thin films have near-atomically flat surface.The chemical and structural parameters of the samples were analyzed by Raman and XPS studies.It was found that the thin films show electrical conductivity with good optical transparency in the visible to near infrared region.The sheet resistance of the films can be significantly reduced by annealing in vacuum and reach 58 k?with a light transmittance of 68.69%at 550 nm.The conductive transparent properties of the reduced graphene oxide thin films would be useful to develop flexible electronics.

High-Quality Single-Layer Graphene via Reparative Reduction of Graphene Oxide

Reduction of graphene oxide （GO） is a promising low-cost synthetic approach to bulk graphene, which offers an accessible route to transparent conducting films and flexible electronics. Unfortunately, the release of oxygen-containing functional groups inevitably leaves behind vacancies and topological defects on the reduced GO sheet, and its low electrical conductivity hinders the development of practical applications. Here, we present a strategy for real-time repair of the newborn vacancies with carbon radicals produced by thermal decomposition of a suitable precursor. The sheet conductivity of thus-obtained single-layer graphene was raised more than six-fold to 350-410 S/cm （whilst retaining 〉96% transparency）. X-ray photoelectron spectroscopy （XPS） and Raman spectroscopy revealed that the conductivity enhancement can be attributed to the formation of additional sp2-C structures. This method provides a simple and efficient process for obtaining highly conductive transparent graphene films.

A Method for Measuring Thermal Radiation Properties of Semi-Transparent Films

This paper presents a method(F method)for determining the optical constants and the thicknesses of semi- transparent thin films.It has the following distinctive features:high precision;rapid determination of the measured quantities;wide range of convergence of solutions;capable of judging whether or not the results are reasonable.In order to meet the needs of application and engineering design,a family of curves designated Fig.n-F was prepared.Using it n,k,d of the films can be conveniently and accurately determined.From the optical constants and the thicknesses of the films determined by the F method,all important thermal radiation properties of the semi-transparent films needed in application can be obtained.

Mathematical Justification of an Obstacle Problem in the Case of a Plate

In this paper the modeling of a thin plate in unilateral contact with a rigid plane is properly justified. Starting from the three-dimensional nonlinear Signorini problem, by an asymptotic approach the convergence of the displacement field as the thickness of the plate goes to zero is studied. It is shown that the transverse mechanical displacement field decouples from the in-plane components and solves an obstacle problem.

Transparent conductive PVP/AgNWs films for flexible organic light emitting diodes by spraying method

In this study, a simple spraying method is used to prepare the transparent conductive films （TCFs） based on Ag nanowires （AgNWs）. Polyvinylpyrrolidone （PVP） is introduced to modify the interface of substrate. The transmittance and bending performance are improved by optimizing the number of spraying times and the solution concentration and controlling the annealing time. The spraying times of 20, the concentration of 2 mg/mL and the annealing time of 10 min are chosen to fabricate the PVP/AgNWs films. The transmittance of PVP/AgNWs films is 53.4%----67.9% at 380---780 nm, and the sheet resistance is 30 f~/n which is equivalent to that of commercial indium tin oxide （1TO）. During cyclic bending tests to 500 cycles with bending radius of 5 ram, the changes of resistivity are negligible. The performance of PVP/AgNW transparent electrodes has little change after being exposed to the normal environment for 1 000 h. The adhesion to polymeric substrate and the ability to endure bending stress in AgNWs network films are both significantly improved by introducing PVP. Spraying method makes AgNWs form a stratified structure on large-area polymer substrates, and the vacuum annealing method is used to weld the AgNWs together at junctions and substrates, which can improve the electrical conductivity. The experimental results indicate that PVP/AgNW transpar- ent electrodes can be used as transparent conductive electrodes in flexible organic light emitting diodes （OLEDs）.

Fabrication and characterization of transparent conducting titanium-zinc oxide nanostructured thin films

Nano transparent conducting titanium-zinc oxide(Ti-Zn O) thin films were prepared on glass substrates by radio frequency(RF) magnetron sputtering technique. The deposited films are characterized by X-ray diffraction(XRD), four-probe meter and UV-visible spectrophotometer. The effects of Ti-doping content on the structural, optical and electrical properties of the films are investigated. The XRD results show that the obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the(002) crystallographic direction. The structural and optoelectronic characteristics of the deposited films are subjected to the Ti-doping content. The Ti-Zn O sample fabricated with the Ti-doping content of 3%(weight percentage) possesses the best crystallinity and optoelectronic performance, with the highest degree of preferred(002) orientation of 99.87%, the largest crystallite size of 83.2 nm, the minimum lattice strain of 6.263×10^(-4), the highest average visible transmittance of 88.8%, the lowest resistivity of 1.18×10^(-3) Ω·cm and the maximum figure of merit(FOM) of 7.08×10~3 Ω^(-1)·cm^(-1). Furthermore, the optical bandgaps of the films are evaluated by extrapolation method and observed to be an increasing tendency with the increase of the Ti-doping content.

A thin-layer spectroelectrochemical study of 3,3',5,5'-tetramethylbenzidine at SnO_2:F film optically transparent electrode

The electrooxidation of 3,3′,5,5′-tetramethylbenzidine (TMB) is dependent on the pH value of Britton-Robinson (B-R) buffer solution. In this work, the electrooxidation behavior of TMB was investigated with a SnO2:F film optically transparent thin-layer spectroelectrochemical cell. TMB underwent one two-electron electrooxidation process in the pH range from 2.0 to < 4.0, and two successive one-electron electrooxidation processes in the pH range from 4.0 to < 7.0 in the B-R buffer solution. At pH 6.5, the electrooxidative product of TMB generated a subsequent chemical reaction to yield an azo compound. Several spectroelectrochemical techniques, such as thin-layer cyclic voltammetry, thin-layer cyclic voltabsorptometry, thin-layer potential-controlled electrolysis absorptometry, thin-layer single-potential-step chronoabsorptometry, thin-layer dou-ble-potential-step chronoabsorptometry, thin-layer single-potential-step open-circuit relaxation chronoabsorptometry, were applied to this investigation. The formal potential E0’ and the electron transfer number corresponding to the electrooxidation of TMB in B-R buffer solution, and the reaction rate constant of the subsequent chemical reaction were determined.