The low efficiency of photogenerated carrier separation,and the poor adsorption and activation ability of CO_(2)on the surface of photocatalyst were the key problems to limit the efficiency of photocatalytic CO_(2)red...The low efficiency of photogenerated carrier separation,and the poor adsorption and activation ability of CO_(2)on the surface of photocatalyst were the key problems to limit the efficiency of photocatalytic CO_(2)reduction.Hence,maximally accelerating the immigration of photogenerated charges d increasing the number of active sites are critical points to boost the overall performance of photocatalytic CO_(2)reduction.However,it is still huge challenge.In this work,the Ni-doped ultrathin Bi_(4)O_(5)Br_(2)nanosheets,which was successfully prepared by hydrothermal and ultrasonic chemical stripping methods,exhibited efficient photocatalytic conversion of CO_(2)to CO.The results of experiments and theoretical calculations indicated that the doped Ni^(2+)significantly increased the crystal dipole moment of Bi_(4)O_(5)Br_(2)in y direction(from 0 to 0.096 e?),which enhanced the polarized electric field strength inside Bi_(4)O_(5)Br_(2),and further promoted the immigration of photogenerated carriers.Meanwhile,the ultrathin structure and doped Ni^(2+)synergistically increased the number of active sites,thereby promoting the adsorption and activation of CO_(2)molecules,as evidenced by experimental and theoretical results collectively.As result,The CO yield was as high as 26.57μmol g–1 h–1 for the prepared Ni-doped ultrathin Bi_(4)O_(5)Br_(2)nanosheets under full spectrum light irradiation,which was 9.48 times that of Bi_(4)O_(5)Br_(2).Therefore,it is of great scientific significance in this study to explore strategies to promote the separation of photogenerated carriers and enhance the adsorption and activation ability of CO_(2)on the surface.展开更多
CoNiFe,CoNiFeB and CoNiFeP soft magnetic thin films were prepared by cyclic voltammetry method.The morphologies,composition and structures were characterized by scanning electron microscope(SEM),energy-dispersive X-...CoNiFe,CoNiFeB and CoNiFeP soft magnetic thin films were prepared by cyclic voltammetry method.The morphologies,composition and structures were characterized by scanning electron microscope(SEM),energy-dispersive X-ray spectroscope(EDS) and X-ray diffractometer(XRD).The soft magnetic properties were investigated through vibrating sample magnetometer(VSM).The corrosion resistance was investigated through Tafel polarization and electrochemical impedance spectroscopic(EIS).The results show that all the electrodeposited CoNiFe,CoNiFeB and CoNiFeP films are mixtures of crystalline and amorphous phases,and high amount of boron/phosphorus-containing additives favors the formation of amorphous state.Nanostructure is obtained in CoNiFe and CoNiFeB films.The inclusion of boron causes the film more dense and also increases its corrosion resistance.Meanwhile,the inclusion of boron lowers its coercivity(Hc) from 851.48 A/m to 604.79 A/m,but the saturation magnetic flux density(Bs) is almost unchanged.However,the addition of phosphorus greatly increases the film particle size and decreases its corrosion stability.The coercivity(Hc) of CoNiFeP film is also highly increased to 12485.79 A/m,and its saturation magnetic flux density(Bs) is greatly decreased to 1.25 T.展开更多
The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline qua...The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline quality of as\|grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self\|silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X\|ray diffraction and electrical measurements. Thin SPE SOS films would have application to the high\|performance CMOS circuitry.展开更多
The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H_2O has been studied.Silicon oxide with refractive index of 1453 has been obtained.Tests on the 5...The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H_2O has been studied.Silicon oxide with refractive index of 1453 has been obtained.Tests on the 51mm wafers show that both thickness uniformity of ±15% and constant refractive index of 1453 can be achieved.By raising the deposition temperature,the qualities have been improved,while the deposition rate decreased.A SiO_2 thick film deposition technique has been developed combining TEOS-PECVD technique with high temperature annealing.展开更多
La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 (100) single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synt...La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 (100) single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synthesized by sol-gel and coprecipitation methods, respectively. The structure, electrical transport properties and surface morphology of the targets and films were studied. It is found that, compared with coprecipitation method, the sol-gel target has more homogeneous components and larger density and grain size, thus the higher insulator-metal transition temperature and larger temperature coefficient of resistivity. The thin film prepared by sol-gel target has a uniform grain size and higher quality. The metal-insulator transition temperature is higher and the laser induced voltage signal is larger. Preparing the target by sol-gel method can largely improve the properties of corresponding thin films in pulsed laser deposition process.展开更多
The effects of relative humidity (RH) on a printed circuit board finished with electroless nickel immersion gold (PCB-ENIG) under an adsorbed thin electrolyte layer (ATEL) were investigated in situ via the measurement...The effects of relative humidity (RH) on a printed circuit board finished with electroless nickel immersion gold (PCB-ENIG) under an adsorbed thin electrolyte layer (ATEL) were investigated in situ via the measurement of cathodic polarization curves, electrochemical impedance spectroscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy to clearly elaborate the corrosion behavior of PCB-ENIG in the atmospheric environment. Results indicated that the cathodic process of PCB-ENIG under ATEL was dominated by the reduction of dissolved oxygen, corrosion products, and H2O. The cathodic current density of PCB-ENIG increased progressively with increasing RH. Moreover, its cathodic current density in the solution was greater than that under ATEL. This result demonstrated that the diffusion process was not the controlling step during the limiting reduction of cathodic oxygen. When the polarization potentials were located in a more negative region, the cathodic polarization current density gradually decreased under 75% and 85% RH. Notably, the anodic process became the controlling step in the extremely thin liquid film during the remainder of the experiment.展开更多
The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO(001) substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the p...The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO(001) substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the plasma annealing post treatment. TIN(002) peak shifts toward low angle direction and TiN(111) peak disappears after the post treatment. The lattice expansion and peak shift are mainly ascribed to the reduction of nitrogen vacancies in films. The magnetism was suppressed in as-prepared sample due to the pinning effect of the nitrogen vacancies at defect sites or interface. The magnetism can be activated by the plasma implantation along with nitrogen vacancies reduce. The decrease of nitrogen vacancies leads to the enhancement of ferromagnetism.展开更多
LiCo0.8M0.2O2 (M=Ni,Zr) films were fabricated by radio frequency sputtering deposition combined with conventional annealing methods. The strtuctures of the films were characterized with X-ray diffraction (XRD), Ra...LiCo0.8M0.2O2 (M=Ni,Zr) films were fabricated by radio frequency sputtering deposition combined with conventional annealing methods. The strtuctures of the films were characterized with X-ray diffraction (XRD), Raman spectroscopy and scarming electron microscopy (SEM) techniques. It was shown that the 700 ℃- annealed LiCo0.8M0.2O2 has an α-NaFeO2 like layered structure. All-solid-state thin-film batteries (TFBs) were fabrieated with these films as the cathode and their eleetroctemical performances were evaluated. It was found that doping of electrochemically active Ni and inactive Zr has different effects on the structural and elcctrochemical properties of the LiCoO2 cathode films. Ni doping increases the discharge capacity of the film while Zr doping improves its cycling stability.展开更多
文摘The low efficiency of photogenerated carrier separation,and the poor adsorption and activation ability of CO_(2)on the surface of photocatalyst were the key problems to limit the efficiency of photocatalytic CO_(2)reduction.Hence,maximally accelerating the immigration of photogenerated charges d increasing the number of active sites are critical points to boost the overall performance of photocatalytic CO_(2)reduction.However,it is still huge challenge.In this work,the Ni-doped ultrathin Bi_(4)O_(5)Br_(2)nanosheets,which was successfully prepared by hydrothermal and ultrasonic chemical stripping methods,exhibited efficient photocatalytic conversion of CO_(2)to CO.The results of experiments and theoretical calculations indicated that the doped Ni^(2+)significantly increased the crystal dipole moment of Bi_(4)O_(5)Br_(2)in y direction(from 0 to 0.096 e?),which enhanced the polarized electric field strength inside Bi_(4)O_(5)Br_(2),and further promoted the immigration of photogenerated carriers.Meanwhile,the ultrathin structure and doped Ni^(2+)synergistically increased the number of active sites,thereby promoting the adsorption and activation of CO_(2)molecules,as evidenced by experimental and theoretical results collectively.As result,The CO yield was as high as 26.57μmol g–1 h–1 for the prepared Ni-doped ultrathin Bi_(4)O_(5)Br_(2)nanosheets under full spectrum light irradiation,which was 9.48 times that of Bi_(4)O_(5)Br_(2).Therefore,it is of great scientific significance in this study to explore strategies to promote the separation of photogenerated carriers and enhance the adsorption and activation ability of CO_(2)on the surface.
基金Projects(50771092,21073162) supported by the National Natural Science Foundation of ChinaProject(2005DKA10400-Z15) supported by the Ministry of Science and Technology of China
文摘CoNiFe,CoNiFeB and CoNiFeP soft magnetic thin films were prepared by cyclic voltammetry method.The morphologies,composition and structures were characterized by scanning electron microscope(SEM),energy-dispersive X-ray spectroscope(EDS) and X-ray diffractometer(XRD).The soft magnetic properties were investigated through vibrating sample magnetometer(VSM).The corrosion resistance was investigated through Tafel polarization and electrochemical impedance spectroscopic(EIS).The results show that all the electrodeposited CoNiFe,CoNiFeB and CoNiFeP films are mixtures of crystalline and amorphous phases,and high amount of boron/phosphorus-containing additives favors the formation of amorphous state.Nanostructure is obtained in CoNiFe and CoNiFeB films.The inclusion of boron causes the film more dense and also increases its corrosion resistance.Meanwhile,the inclusion of boron lowers its coercivity(Hc) from 851.48 A/m to 604.79 A/m,but the saturation magnetic flux density(Bs) is almost unchanged.However,the addition of phosphorus greatly increases the film particle size and decreases its corrosion stability.The coercivity(Hc) of CoNiFeP film is also highly increased to 12485.79 A/m,and its saturation magnetic flux density(Bs) is greatly decreased to 1.25 T.
文摘The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline quality of as\|grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self\|silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X\|ray diffraction and electrical measurements. Thin SPE SOS films would have application to the high\|performance CMOS circuitry.
文摘The deposition of silicon dioxide by plasma enhanced chemical vapor deposition from tetraethylorthosilicate (TEOS) and H_2O has been studied.Silicon oxide with refractive index of 1453 has been obtained.Tests on the 51mm wafers show that both thickness uniformity of ±15% and constant refractive index of 1453 can be achieved.By raising the deposition temperature,the qualities have been improved,while the deposition rate decreased.A SiO_2 thick film deposition technique has been developed combining TEOS-PECVD technique with high temperature annealing.
基金Project(50902062)supported by the National Natural Science Foundation of ChinaProject(KKZ1200927002)supported by Key Programme of Kunming University of Science and Technology,China
文摘La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 (100) single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synthesized by sol-gel and coprecipitation methods, respectively. The structure, electrical transport properties and surface morphology of the targets and films were studied. It is found that, compared with coprecipitation method, the sol-gel target has more homogeneous components and larger density and grain size, thus the higher insulator-metal transition temperature and larger temperature coefficient of resistivity. The thin film prepared by sol-gel target has a uniform grain size and higher quality. The metal-insulator transition temperature is higher and the laser induced voltage signal is larger. Preparing the target by sol-gel method can largely improve the properties of corresponding thin films in pulsed laser deposition process.
基金Project(51271032)supported by the National Natural Science Foundation of ChinaProject(2014CB643300)supported by the National Basic Research Program of ChinaProject supported by the National Environmental Corrosion Platform,China
文摘The effects of relative humidity (RH) on a printed circuit board finished with electroless nickel immersion gold (PCB-ENIG) under an adsorbed thin electrolyte layer (ATEL) were investigated in situ via the measurement of cathodic polarization curves, electrochemical impedance spectroscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy to clearly elaborate the corrosion behavior of PCB-ENIG in the atmospheric environment. Results indicated that the cathodic process of PCB-ENIG under ATEL was dominated by the reduction of dissolved oxygen, corrosion products, and H2O. The cathodic current density of PCB-ENIG increased progressively with increasing RH. Moreover, its cathodic current density in the solution was greater than that under ATEL. This result demonstrated that the diffusion process was not the controlling step during the limiting reduction of cathodic oxygen. When the polarization potentials were located in a more negative region, the cathodic polarization current density gradually decreased under 75% and 85% RH. Notably, the anodic process became the controlling step in the extremely thin liquid film during the remainder of the experiment.
基金This work is supported by nology Cooperation Plan of LKS[2013]15), the 2012 Doctor Normal University of China the Science and Tech- Guizhou Province (J- Foundation of Guizhou (Xun Zhou) Scholars of Ministry of Education of China, Ph.D. Programs Foundation of Ministry of Education of China (No.20120171120011), the Open Fund of the State Key Laboratory on Integrated Optoelectronics of Jilin University (No.IOKL2013KF14), the National Natural Science Foundation of China (No.61273310).
文摘The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO(001) substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the plasma annealing post treatment. TIN(002) peak shifts toward low angle direction and TiN(111) peak disappears after the post treatment. The lattice expansion and peak shift are mainly ascribed to the reduction of nitrogen vacancies in films. The magnetism was suppressed in as-prepared sample due to the pinning effect of the nitrogen vacancies at defect sites or interface. The magnetism can be activated by the plasma implantation along with nitrogen vacancies reduce. The decrease of nitrogen vacancies leads to the enhancement of ferromagnetism.
基金supported Science Foundation of China by the National Natural(No.20203006).
文摘LiCo0.8M0.2O2 (M=Ni,Zr) films were fabricated by radio frequency sputtering deposition combined with conventional annealing methods. The strtuctures of the films were characterized with X-ray diffraction (XRD), Raman spectroscopy and scarming electron microscopy (SEM) techniques. It was shown that the 700 ℃- annealed LiCo0.8M0.2O2 has an α-NaFeO2 like layered structure. All-solid-state thin-film batteries (TFBs) were fabrieated with these films as the cathode and their eleetroctemical performances were evaluated. It was found that doping of electrochemically active Ni and inactive Zr has different effects on the structural and elcctrochemical properties of the LiCoO2 cathode films. Ni doping increases the discharge capacity of the film while Zr doping improves its cycling stability.