薄池吸收宽带紫外光度检测器的研制

设计和制作了利用宽带吸收技术进行宽带表观吸光度测定的薄池宽带紫外光度检测器 (large bandwidthUVabsorptiondetector,简称LBUAD) ,并进行了性能表征。该检测器在光学系统上采用氘灯做为紫外光源 ,通过宽带紫外玻璃得到入射宽带光 ,并利用中心对称的双透镜聚焦光学系统对宽带光进行聚焦 ,聚好的光斑通过蓝宝石球进一步会聚后照射吸收池 ,然后进行检测。毛细管薄池中系列高锰酸钾溶液的表观吸光度测定结果表明 :该仪器的动态范围为 2～ 3个数量级 ,对硝基苯肼的表观吸光度测定结果表明 ,其检出限达到10 - 6 AU ,基线漂移小于 0 .0 0 1AU h。与商品DD2 0 0 0紫外检测器的比较以及在实际电泳分离中的检测进一步表明

Effect of substrate temperature and oxygen plasma treatment on the properties of magnetron-sputtered CdS for solar cell applications

Cadmium sulfide(CdS)is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material(ETM)in solar cells.At present,numerous methods for preparing CdS thin films have emerged,among which magnetron sputtering(MS)is one of the most commonly used vacuum techniques.For this type of technique,the substrate temperature is one of the key deposition parameters that affects the interfacial properties between the target film and substrate,determining the specific growth habits of the films.Herein,the effect of substrate temperature on the microstructure and electrical properties of magnetron-sputtered CdS(MS-CdS)films was studied and applied for the first time in hydrothermally deposited antimony selenosulfide(Sb_(2)(S,Se)_(3))solar cells.Adjusting the substrate temperature not only results in the design of the flat and dense film with enhanced crystallinity but also leads to the formation of an energy level arrangement with a Sb_(2)(S,Se)_(3)layer that is more favorable for electron transfer.In addition,we developed an oxygen plasma treatment for CdS,reducing the parasitic absorption of the device and resulting in an increase in the short-circuit current density of the solar cell.This study demonstrates the feasibility of MS-CdS in the fabrication of hydrothermal Sb_(2)(S,Se)_(3)solar cells and provides interface optimization strategies to improve device performance.

Physical and Electrochemical Characterization of LiCo0.8M0.2O2 （M=Ni,Zr） Cathode Films for All-solid-state Rechargeable Thin-film Lithium Batteries

LiCo0.8M0.2O2 （M=Ni,Zr） films were fabricated by radio frequency sputtering deposition combined with conventional annealing methods. The strtuctures of the films were characterized with X-ray diffraction （XRD）, Raman spectroscopy and scarming electron microscopy （SEM） techniques. It was shown that the 700 ℃- annealed LiCo0.8M0.2O2 has an α-NaFeO2 like layered structure. All-solid-state thin-film batteries （TFBs） were fabrieated with these films as the cathode and their eleetroctemical performances were evaluated. It was found that doping of electrochemically active Ni and inactive Zr has different effects on the structural and elcctrochemical properties of the LiCoO2 cathode films. Ni doping increases the discharge capacity of the film while Zr doping improves its cycling stability.

Plasma Treatment Enhanced Magnetic Properties in Manganese Doped Titanium Nitride Thin Films

The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO（001） substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the plasma annealing post treatment. TIN（002） peak shifts toward low angle direction and TiN（111） peak disappears after the post treatment. The lattice expansion and peak shift are mainly ascribed to the reduction of nitrogen vacancies in films. The magnetism was suppressed in as-prepared sample due to the pinning effect of the nitrogen vacancies at defect sites or interface. The magnetism can be activated by the plasma implantation along with nitrogen vacancies reduce. The decrease of nitrogen vacancies leads to the enhancement of ferromagnetism.

Comparing Crystalline Silicon Solar Cells with Thin Film

Photovoltaics are currently recognized as a top ranking technology among the new energies. Photovoltaics have the potential to eventually make a considerable contribution to the power generation capacity in the world, especially, in the industrialized countries. Good accomplishment has been obtained in the cost reduction of PV systems, for example in 1974, systems cost (100～150) $/W. In 1981, such systems cost less than (10～30) $/W, and now they cost less than 5 $/W. However, more R&D efforts are still necessary, to achieve large-scale cost-effective production of PV systems to make it competitive with diesel generation of electricity,although PV systems have proven to be competitive in rural and remote areas. In this paper, an overview on high efficiency solar cell technologies will be presented.

Preparation and Characterization of Electrodeposited-Annealed CulnSe2 Thin Films for Solar Cells

CuInSe2 （CIS） films with good crystalline quality were synthesized by electrodeposition followed by annealing in Se vapor at 530 ℃. The morphology, composition, crystal structure, optical and electrical properties of the CIS films were investigated by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Raman spectroscopy, UV-VISNIR spectroscopy, and admittance spectroscopy. The results revealed that the annealed CIS films had chalcopyrite structure and consisted of relatively large grains in the range of 500-1000 nm and single grain of films extend usually through the whole film thickness. The band gap of CIS films was 0.98 eV and carrier concentration was in the order of 1016 cm-3 after etching the Cu-Se compounds on the film surface. Solar cells with the structure of AZO/i-ZnO/CdS/CIS/Mo/glass were fabricated. Current density vs. voltage test under standard reported condition showed the solar cells with an area of 0.2 cm2 had a conversion efficiency of 0.96%. The underlying physics was also discussed.

Significant Enhancement in Built-in Potential and Charge Carrier Collection of Organic Solar Cells using 4-（5-hexylthiophene-2-yl）-2,6-bis（5- trifluoromethyl）thiophen-2-yl）pyridine as a Cathode Buffer Layer

An electron transporting material of TFTTP （4-（5-hexylthiophene-2-yl）-2,6-bis（5-trifluoromethyl）thiophen-2-yl）pyridine） was investigated as a cathode buffer layer to enhance the power efficiency of organic solar cells （OSCs） based on subphthalocyanine and C60. The overall power conversion efficiency was increased by a factor of 1.31 by inserting the TFTTP interfacial layer between the active layer and metallic cathode. The inner mechanism responsible for the performance enhancement of OSCs was systematically studied with the simulation of dark diode behavior and optical field distribution inside the devices as well as the characterization of device photocurrent. The results showed that the TFTTP layer could significantly increase the built-in potential in the devices, leading to the enhanced dissociation of charge transfer excitons. In addition, by using TFTTP as the buffer layer, a better Ohmic contact at C60/metal interface was formed, facilitating more efficient free charge carrier collection.

Optimizing the nickel boride layer thickness in a spectroelectrochemical ATR-FTIR thin-film flow cell applied in glycerol oxidation

The influence of the drop-casted nickel boride catalyst loading on glassy carbon electrodes was investigated in a spectroelectrochemical ATR-FTIR thin-film flow cell applied in alkaline glycerol electrooxidation.The continuously operated radial flow cell consisted of a borehole electrode positioned 50μm above an internal reflection element enabling operando FTIR spectroscopy.It is identified as a suitable tool for facile and reproducible screening of electrocatalysts under well-defined conditions,additionally providing access to the selectivities in complex reaction networks such as glycerol oxidation.The fast product identification by ATR-IR spectroscopy was validated by the more time-consuming quantitative HPLC analysis of the pumped electrolyte.High degrees of glycerol conversion were achieved under the applied laminar flow conditions using 0.1 M glycerol and 1 M KOH in water and a flow rate of 5μL min^(–1).Conversion and selectivity were found to depend on the catalyst loading,which determined the catalyst layer thickness and roughness.The highest loading of 210μg cm^(–2)resulted in 73%conversion and a higher formate selectivity of almost 80%,which is ascribed to longer residence times in rougher films favoring readsorption and C–C bond scission.The lowest loading of 13μg cm^(–2)was sufficient to reach 63%conversion,a lower formate selectivity of 60%,and,correspondingly,higher selectivities of C_(2)species such as glycolate amounting to 8%.Thus,only low catalyst loadings resulting in very thin films in the fewμm thickness range are suitable for reliable catalyst screening.

Dynamic Thermal Model and Temperature Control of Proton Exchange Membrane Fuel Cell Stack

A dynamic thermal transfer model of a proton exchange membrane fuel cell (PEMFC) stack is developed based on energy conservation in order to reach better temperature control of PEMFC stack. Considering its uncertain parameters and disturbance, we propose a robust adaptive controller based on backstepping algorithm of Lyaponov function. Numerical simulations indicate the validity of the proposed controller.

A Mathematic Model of Gas-diffusion Electrodes in Contact with Liquid Electrolytes

A mathematic model is developed which is applied to analyze the main factors that affect electrode performance and to account for the process of reaction and mass transfer in gas-diffusion electrodes in contact with liquid electrolytes. Electrochemical Thiele modulus φ^2 and electrochemical effectiveness factor η are introduced to elucidate the effects of diffusion on electrochemical reaction and utilization of the gas-diffusion electrode. Profile of the reactant along axial direction is discussed, dependence of electrode potential V on current density J, are predicated by means of the newly developed mathematical model.

Nc-Si Thin Film Deposited at Low Temperature and Nc-Si Heterojunction Solar Cell

This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si∶H/p-type c-Si heterojunction solar cell, which has open circuit voltage (U oc ) of 558 mV and short circuit current intensity (I sc ) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the U oc , I sc , and FF can keep stable for 10 h.

Local segregation in Cu-In precursors and its effects on microstructures of selenized CuInSe_2 thin films

Local segregation in Cu-In precursors and its effects on the element distribution and microstructures of selenized CuInSe2 thin films were investigated. Cu-In precursors with an ideal total mole ratio of Cu to In of 0.92 were prepared by middle frequency alternating current magnetron sputtering with Cu-In alloy target, then CuInSe2 absorbers for solar cells were formed by selenization process in selenium atmosphere. Scanning electron microscope and energy dispersive X-ray spectroscope were used respectively to observe the surface morphologies and determine the compositions of both Cu-In precursors and CuInSe2 thin films. Their microstructures were characterized by X-ray diffractometry and Raman spectroscope. The results show that Cu-In precursors are mainly composed of (Cu11In9) phase with In-rich solid solution. Stoichiometric CuInSe2 thin films with a homogeneous element distribution and single chalcopyrite phase can be synthesized from a segregated Cu-In precursor film with an ideal total mole ratio of Cu to In of 0.92. CuInSe2 thin film shows P-type conductivity and its resistivity reaches 1.2×103Ω·cm.

CdS Thin Films Deposited by CBD Method on Glass

CdS thin films were prepared by chemical-bath-deposited method and the effect of temperature and time on the properties of CdS thin films was studied. Independent of the deposited temperature, the growth was mainly controlled by the ion-by-ion growth mechanism at the beginning of the film deposition, then the cluster-by-cluster mechanism came to be dominant. The growth rate increased faster with the increasing of temperature until the thickness reached the limitation, then thickness instead become thinner. The scanning electron micro- scope results revealed that the morphology of the CdS film changed from pinholes to rough, inhomogeneous surface with increasing deposition time and deposition temperature. The X- ray diffraction results showed the film structure was a mixture of two phases： hexagonal and cubic, and it was very important to controll deposition time to the film＇s crystal phase. All films in depth of approxilnate 100 nm existed above 65% transmittance, the absorption edge became ＂red-shift＂ with temperature rising. At 60 and 70℃, with 20 min deposited-time, the energy band gap was more than 2.42 eV and decreased with time, while at 80 and 90℃ the energy band gap was less than 2.42 eV and increased little when the time changed from 10min to 15 nfin at 80℃.

Using HF rather than NH_4F as doping source for spray-deposited SnO_2:F thin films

Fluorine doped tin oxide SnO2：F thin films were prepared by the spray pyrolysis （SP） technique on glass substrates by using SnC12.2H2O as a precursor and NH4F and HF as doping compounds. A comparison between the properties of the films obtained by using the two doping compounds was performed by using I-V characteristics in the dark at room temperature, AC measurements, and transmittance. It is found that the films prepared by using HF have smaller resistivity, lower impedance and they are less capacitive than films prepared by using NH4F. In addition, these films have higher transmittance, higher optical bandgap energy and narrower Urbach tail width. These results are interesting for the use of SnO2：F as forecontact in CdS/CdTe solar cells.

Investigation on Silicon Thin Film Solar Cells

The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

Correlating Photovoltaic Performance of Dye-Sensitized Solar Cell to the Film Thickness of Titania via Numerical Drift-Diffusion Simulations

The thickness of TiO2 film is vital to realize the optimization on photovoltaic performance of dye sensitized solar cells （DSSCs）. Herein, the process of charge separation in DSSCs was simulated by using a drift-diffusion model. This model allows multiple-trapping diffu- sion of photo-generated electrons, as well as the back reaction with the electron acceptors in electrolyte, to be mimicked in both steady and non-steady states. Numerical results on current-voltage characteristics allow power conversion efficiency to be maximized by varying the thickness of TiO2 film. Charge collection efficiency is shown to decrease with film thick- ness, whereas the flux of electron injection benefits from the film thickening. The output of photocurrent is actually impacted by the two factors. Furthermore, recombination rate constant is found to affect the optimized film thickness remarkably. Thicker TiO2 film is suitable to the DSSCs in which back reaction is suppressed sufficiently. On the contrary, the DSSCs with the redox couple showing fast electron interception require thinner film to alleviate the charge loss via recombination. At open circuit, electron density is found to decrease with film thickness, which engenders not only the reduction of photovoltage but also the increase of electron lifetime.

An analytical model to explore open-circuit voltage of a-Si:H/c-Si heterojunction solar cells

The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).

Hydrogen ion beam assisted preparation of metal halide electrodes for batteries

A new method of preparing thin film metal-hydride electrodes for metal-hydride batteries is described. The method consists of simultaneous deposition of multi-component metallic species onto a substrate while bombarding the growing, deposited thin film electrode with a low energy hydrogen ion beam An amorphous LaNi4 hydride thin film electrode has been prepared by this Hydrogen Ion Beam Assisted Deposition （HIBAD） technique. The electrochemical discharge capacity and cycle life of this electrode in a 6 M KOH solution surpass previously reported values for La-Ni thin film electrodes prepared by other deposition methods.

Observation on Surface and Cross Section of Thin Film Solar Cells Using Atomic Force Microscope

Atomic force microscope (AFM) is able to produce three-dimensional digital data in both force-mode and height-mode and its applications are not limited to map the surfaces of conducting materials. It can use the force-mode to image the repulsive and attractive force patterns. The cross sections of polycrystalline CdS/CdTe and amorphous silicon heterojunction solar cells are observed with AFM. In case of short circuit, the microstructures of different layers in the samples are clearly displayed. When the cells are open circuit, the topographical images are altered, the potential outline due to the space charge in junction region is observed. Obviously, AFM can be employed to investigate experimentally built-in potential in junction of semiconductor devices, such as solar cells.

Analysis of the application of the laser equipment in the production line of the amorphous silicon film solar cells

The laser equipment is one of the key equipment in the production line of the solar energy. In this article, the author de-scribes the application of the laser equipment in the production line of the amorphous silicon film solar cells, and points out that the stable and exactitude is the key direction of the future development of the laser scribing equipment.