Fluorine doped tin oxide SnO2：F thin films were prepared by the spray pyrolysis （SP） technique on glass substrates by using SnC12.2H2O as a precursor and NH4F and HF as doping compounds. A comparison between the pr...Fluorine doped tin oxide SnO2：F thin films were prepared by the spray pyrolysis （SP） technique on glass substrates by using SnC12.2H2O as a precursor and NH4F and HF as doping compounds. A comparison between the properties of the films obtained by using the two doping compounds was performed by using I-V characteristics in the dark at room temperature, AC measurements, and transmittance. It is found that the films prepared by using HF have smaller resistivity, lower impedance and they are less capacitive than films prepared by using NH4F. In addition, these films have higher transmittance, higher optical bandgap energy and narrower Urbach tail width. These results are interesting for the use of SnO2：F as forecontact in CdS/CdTe solar cells.展开更多
Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing(FA) and rapid thermal annealing(RTA),respectively. From the Raman spectra and scanning electronic micros...Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing(FA) and rapid thermal annealing(RTA),respectively. From the Raman spectra and scanning electronic microscope(SEM),it found that the thin films made by RTA had smooth and perfect structure,while the thin films annealed by FA had a higher degree of structural disorder.展开更多
Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputter-etched for different time. Both the size of ZnO grains and the root-mean-square (RMS) roughness d...Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputter-etched for different time. Both the size of ZnO grains and the root-mean-square (RMS) roughness decrease, as the sputter-etching time of the substrate increases. More Zn atoms are bound to O atoms in the films, and the defect concentration is decreased with increasing sputter-etching time of substrate. Meanwhile, the crystallinity and c-axis orientation are improved at longer sputter-etching time of the substrate. The Raman peaks at 99 cm-1, 438 cm-1 and 589 cm-1 are identified as E2(low), E2(high) and E1(LO) modes, respectively, and the position of E1(LO) peak blue shifts at longer sputter-etching time. The transmittances of the films, which are deposited on the substrate and etched for 10 min and 20 min, are higher in the visible region than that of the films deposited under longer sputter-etching time of 30 min. The bandgap increases from 3.23 eV to 3.27 eV with the increase of the sputter-etching time of substrate.展开更多
Vanadium dioxides were fabricated on normal glass substrates using reactive radio frequency （RF） magnetron sputtering. The oxygen flow volume and annealed temperatures as growth parameters are systematically investi...Vanadium dioxides were fabricated on normal glass substrates using reactive radio frequency （RF） magnetron sputtering. The oxygen flow volume and annealed temperatures as growth parameters are systematically investigated. The electrical and opti- cal properties of VO2 and Au：VO2 thin films with different growth conditions are discussed. The semiconductor-metal phase transition temperature decreased by -10~C for the sample with Au doping compared to the sample without Au doping. How- ever, the optical transmittance of Au：VO2 thin films is much lower than that of bare VO2. These results show that Au doping has a marked effect on the electrical and optical properties.展开更多
文摘Fluorine doped tin oxide SnO2：F thin films were prepared by the spray pyrolysis （SP） technique on glass substrates by using SnC12.2H2O as a precursor and NH4F and HF as doping compounds. A comparison between the properties of the films obtained by using the two doping compounds was performed by using I-V characteristics in the dark at room temperature, AC measurements, and transmittance. It is found that the films prepared by using HF have smaller resistivity, lower impedance and they are less capacitive than films prepared by using NH4F. In addition, these films have higher transmittance, higher optical bandgap energy and narrower Urbach tail width. These results are interesting for the use of SnO2：F as forecontact in CdS/CdTe solar cells.
基金Natural Science Foundation of Henan Province(072300410310)Key Science and Technology Project of Henan Province(0624250022)
文摘Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing(FA) and rapid thermal annealing(RTA),respectively. From the Raman spectra and scanning electronic microscope(SEM),it found that the thin films made by RTA had smooth and perfect structure,while the thin films annealed by FA had a higher degree of structural disorder.
基金supported by the National Natural Science Foundation of China (No.50972105)the National High Technology Research and Development Program of China (No.2009AA03Z444)the Key Supporting Plan Program of Tianjin (No.10ZCKFGX01200)
文摘Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputter-etched for different time. Both the size of ZnO grains and the root-mean-square (RMS) roughness decrease, as the sputter-etching time of the substrate increases. More Zn atoms are bound to O atoms in the films, and the defect concentration is decreased with increasing sputter-etching time of substrate. Meanwhile, the crystallinity and c-axis orientation are improved at longer sputter-etching time of the substrate. The Raman peaks at 99 cm-1, 438 cm-1 and 589 cm-1 are identified as E2(low), E2(high) and E1(LO) modes, respectively, and the position of E1(LO) peak blue shifts at longer sputter-etching time. The transmittances of the films, which are deposited on the substrate and etched for 10 min and 20 min, are higher in the visible region than that of the films deposited under longer sputter-etching time of 30 min. The bandgap increases from 3.23 eV to 3.27 eV with the increase of the sputter-etching time of substrate.
基金supported by the Fundamental Research Funds for Central Universities of China (Grant No. 2009JBM098)the Natural Science Foundation of Beijing (Grant No. 2113050)
文摘Vanadium dioxides were fabricated on normal glass substrates using reactive radio frequency （RF） magnetron sputtering. The oxygen flow volume and annealed temperatures as growth parameters are systematically investigated. The electrical and opti- cal properties of VO2 and Au：VO2 thin films with different growth conditions are discussed. The semiconductor-metal phase transition temperature decreased by -10~C for the sample with Au doping compared to the sample without Au doping. How- ever, the optical transmittance of Au：VO2 thin films is much lower than that of bare VO2. These results show that Au doping has a marked effect on the electrical and optical properties.
