The incubation layer with amorphous structure between the substrate and crystalline layer may obviously affect the performance for a microcrystalline Si thin film transistor (μc-Si TFT),especially for the bottom gate...The incubation layer with amorphous structure between the substrate and crystalline layer may obviously affect the performance for a microcrystalline Si thin film transistor (μc-Si TFT),especially for the bottom gate TFT(BG-TFT).It is found that decreasing the ratio of SiH 4/(H 2+SiH 4) is an effective way to decrease the incubation layer thickness of μc-Si directly deposited by VHF PECVD without any further thermal or laser treatment.Based on the μc-Si with a thin incubation layer,the BG-TFT with Al/SiN x/μc-Si/n+-μc-Si/Al structure is fabricated.The ratio of on-state current to off-state current is up to 106,the mobility is around 0.7cm2/(V·s),and the threshold voltage is about 5V.展开更多
A novel radiation tolerant SOI isolation structure,consisting of thin SiO2/polysilicon/field SiO2 multilayers,is proposed. A device with this structure does not show obvious changes in subthreshold characteristics and...A novel radiation tolerant SOI isolation structure,consisting of thin SiO2/polysilicon/field SiO2 multilayers,is proposed. A device with this structure does not show obvious changes in subthreshold characteristics and leakage current,indicating a superior radiation tolerance to traditional LOCOS.展开更多
Silica gel impregnated with 1% aqueous solutions of different metal cations （Li^＋, Mg^2＋, Zn^2＋, Cu^2＋, Co^2＋, Ni^2＋, Ba^2＋and Th^4＋） has been used for the analysis of nonionic and cationic surfaetants using...Silica gel impregnated with 1% aqueous solutions of different metal cations （Li^＋, Mg^2＋, Zn^2＋, Cu^2＋, Co^2＋, Ni^2＋, Ba^2＋and Th^4＋） has been used for the analysis of nonionic and cationic surfaetants using simple aqueous acetone as mobile phase system. Co^2＋ was found the most suitable impregnant for the mutual separation of nonionic surfactants （Brij-35 and Brij-57） and cationic from nonionic surfactants （tetmdecyltrimethylammonium bromide and Cween-20）. Zinc sulphate impregnation （Zn^2＋-silica gel） shows identical chromatographic behavior and these layers are useful to separate nonionic surfactant （Brij-35） from cationic surfaetant （cetylpyridinium chloride）. The mutual separation of B J-35 and B J-57 is not influenced by the presence of optical brightener in the sample.展开更多
Combining a progressive tandem junction design with a unique Si nanowire(SiNW)framework paves the way for the development of high‐onset‐potential photocathodes and enhancement of solar hydrogen production.Herein,a r...Combining a progressive tandem junction design with a unique Si nanowire(SiNW)framework paves the way for the development of high‐onset‐potential photocathodes and enhancement of solar hydrogen production.Herein,a radial tandem junction(RTJ)thin film water‐splitting photo‐cathode has been demonstrated experimentally for the first time.The photocathode is directly fab‐ricated on vapor‐liquid‐solid‐grown SiNWs and consists of two radially stacked p‐i‐n junctions,featuring hydrogenated amorphous silicon(a‐Si:H)as the outer absorber layer,which absorbs short wavelengths,and hydrogenated amorphous silicon germanium(a‐SiGe:H)as the inner layer,which absorbs long wavelengths.The randomly distributed SiNW framework enables highly efficient light‐trapping,which facilitates the use of very thin absorber layers of a‐Si:H(~50 nm)and a‐SiGe:H(~40 nm).In a neutral electrolyte(pH=7),the three‐dimensional(3D)RTJ photocathode delivers a high photocurrent onset of 1.15 V vs.the reversible hydrogen electrode(RHE),accompanied by a photocurrent of 2.98 mA/cm^(2) at 0 V vs.RHE,and an overall applied‐bias photon‐to‐current effi‐ciency of 1.72%.These results emphasize the promising role of 3D radial tandem technology in developing a new generation of durable,low‐cost,high‐onset‐potential photocathodes capable of large‐scale implementation。展开更多
文摘The incubation layer with amorphous structure between the substrate and crystalline layer may obviously affect the performance for a microcrystalline Si thin film transistor (μc-Si TFT),especially for the bottom gate TFT(BG-TFT).It is found that decreasing the ratio of SiH 4/(H 2+SiH 4) is an effective way to decrease the incubation layer thickness of μc-Si directly deposited by VHF PECVD without any further thermal or laser treatment.Based on the μc-Si with a thin incubation layer,the BG-TFT with Al/SiN x/μc-Si/n+-μc-Si/Al structure is fabricated.The ratio of on-state current to off-state current is up to 106,the mobility is around 0.7cm2/(V·s),and the threshold voltage is about 5V.
文摘A novel radiation tolerant SOI isolation structure,consisting of thin SiO2/polysilicon/field SiO2 multilayers,is proposed. A device with this structure does not show obvious changes in subthreshold characteristics and leakage current,indicating a superior radiation tolerance to traditional LOCOS.
文摘Silica gel impregnated with 1% aqueous solutions of different metal cations （Li^＋, Mg^2＋, Zn^2＋, Cu^2＋, Co^2＋, Ni^2＋, Ba^2＋and Th^4＋） has been used for the analysis of nonionic and cationic surfaetants using simple aqueous acetone as mobile phase system. Co^2＋ was found the most suitable impregnant for the mutual separation of nonionic surfactants （Brij-35 and Brij-57） and cationic from nonionic surfactants （tetmdecyltrimethylammonium bromide and Cween-20）. Zinc sulphate impregnation （Zn^2＋-silica gel） shows identical chromatographic behavior and these layers are useful to separate nonionic surfactant （Brij-35） from cationic surfaetant （cetylpyridinium chloride）. The mutual separation of B J-35 and B J-57 is not influenced by the presence of optical brightener in the sample.
文摘Combining a progressive tandem junction design with a unique Si nanowire(SiNW)framework paves the way for the development of high‐onset‐potential photocathodes and enhancement of solar hydrogen production.Herein,a radial tandem junction(RTJ)thin film water‐splitting photo‐cathode has been demonstrated experimentally for the first time.The photocathode is directly fab‐ricated on vapor‐liquid‐solid‐grown SiNWs and consists of two radially stacked p‐i‐n junctions,featuring hydrogenated amorphous silicon(a‐Si:H)as the outer absorber layer,which absorbs short wavelengths,and hydrogenated amorphous silicon germanium(a‐SiGe:H)as the inner layer,which absorbs long wavelengths.The randomly distributed SiNW framework enables highly efficient light‐trapping,which facilitates the use of very thin absorber layers of a‐Si:H(~50 nm)and a‐SiGe:H(~40 nm).In a neutral electrolyte(pH=7),the three‐dimensional(3D)RTJ photocathode delivers a high photocurrent onset of 1.15 V vs.the reversible hydrogen electrode(RHE),accompanied by a photocurrent of 2.98 mA/cm^(2) at 0 V vs.RHE,and an overall applied‐bias photon‐to‐current effi‐ciency of 1.72%.These results emphasize the promising role of 3D radial tandem technology in developing a new generation of durable,low‐cost,high‐onset‐potential photocathodes capable of large‐scale implementation。
