[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied...[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.展开更多
Pepsin was assembled on the surface of prepared poly(ethylene terephthalate)(PET-NH3^+) substrates.The composition and structure of the pepsin/PET-NH3^+ assembling films in different condition were characterized by X-...Pepsin was assembled on the surface of prepared poly(ethylene terephthalate)(PET-NH3^+) substrates.The composition and structure of the pepsin/PET-NH3^+ assembling films in different condition were characterized by X-ray photoelectron spectroscopy(XPS) and atomic force microscopy(AFM).展开更多
SiC granule films were fabricated onto porous glass substrate by RF-magnetron sputtering. Photoluminescence （PL） measurements show that there are light emissions at three different wavelengths. Ultraviolet emission ...SiC granule films were fabricated onto porous glass substrate by RF-magnetron sputtering. Photoluminescence （PL） measurements show that there are light emissions at three different wavelengths. Ultraviolet emission peaked at 360 nm originated from the band-band transmission of SiC nanoparticles with relatively small size. The 370 nm light emission was due to the luminescence of the nano-skeletons of porous glass that was formed during the etching of the glass substrate. The blue emission at about 460 nm was associated with the recombination of the excited electron and O-deficient defects appeared at the interface between SiC nanoparticles and the porous glass. Furthermore, the optimal PL performance was obtained when SiC deposited time was I h and the glass substrate was etched for 20 min in the annealing sample （450 ℃）.展开更多
The elastic stress fields caused by a dislocation in GexSil~ epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system, the image method is furthe...The elastic stress fields caused by a dislocation in GexSil~ epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system, the image method is further developed to determine the stress field of a dislocation in the film-substrate system under coupled condition. The film-substrate system is firstly transformed into a bimaterial system by distributing image dislocation densities on the position of the free surface. Then, the unknown image dis- location densities are solved by using boundary conditions, i.e., traction free conditions on the free surface. Numerical simula- tion focuses on the Ge0.1Si0.9/Si film-substrate system. The effects of layer thickness, position of the dislocation and crystallo- graphic orientation on the stress fields are discussed. Results reveal that both the stresses σxx,σxz at the free surface and the stress o-σx, σyy, σyz on the interface are influenced by the layer thickness, but the former is stronger. In contrast to the weak de- pendence of stress field on the crystallographic orientation the stress field was strongly affected by dislocation position. The stress fields both in the film-substrate system and bimaterial system are plotted.展开更多
基金Project(10574085) supported by the National Natural Science Foundation of ChinaProject(207020) supported by the Science Technology Key Project of the Ministry of Education, China
文摘[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.
文摘Pepsin was assembled on the surface of prepared poly(ethylene terephthalate)(PET-NH3^+) substrates.The composition and structure of the pepsin/PET-NH3^+ assembling films in different condition were characterized by X-ray photoelectron spectroscopy(XPS) and atomic force microscopy(AFM).
基金National Science Foundation of China (10774037)Natural Science Foundation of Hebei Province (E2007000280)Foundation of Hebei Educational Committee (2006123)
文摘SiC granule films were fabricated onto porous glass substrate by RF-magnetron sputtering. Photoluminescence （PL） measurements show that there are light emissions at three different wavelengths. Ultraviolet emission peaked at 360 nm originated from the band-band transmission of SiC nanoparticles with relatively small size. The 370 nm light emission was due to the luminescence of the nano-skeletons of porous glass that was formed during the etching of the glass substrate. The blue emission at about 460 nm was associated with the recombination of the excited electron and O-deficient defects appeared at the interface between SiC nanoparticles and the porous glass. Furthermore, the optimal PL performance was obtained when SiC deposited time was I h and the glass substrate was etched for 20 min in the annealing sample （450 ℃）.
基金supported by the Science and Technology on Surface Physics and Chemistry Laboratory(Grant No.SPC201106)
文摘The elastic stress fields caused by a dislocation in GexSil~ epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system, the image method is further developed to determine the stress field of a dislocation in the film-substrate system under coupled condition. The film-substrate system is firstly transformed into a bimaterial system by distributing image dislocation densities on the position of the free surface. Then, the unknown image dis- location densities are solved by using boundary conditions, i.e., traction free conditions on the free surface. Numerical simula- tion focuses on the Ge0.1Si0.9/Si film-substrate system. The effects of layer thickness, position of the dislocation and crystallo- graphic orientation on the stress fields are discussed. Results reveal that both the stresses σxx,σxz at the free surface and the stress o-σx, σyy, σyz on the interface are influenced by the layer thickness, but the former is stronger. In contrast to the weak de- pendence of stress field on the crystallographic orientation the stress field was strongly affected by dislocation position. The stress fields both in the film-substrate system and bimaterial system are plotted.
