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近紫外面发射体—金属薄膜的研究
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作者 卢耀华 李野 +1 位作者 姜德龙 孙秀平 《长春光学精密机械学院学报》 2000年第3期13-16,共4页
文中介绍了金属Al和Au薄膜光电阴极的光电发射特性和暴露大气后的稳定情况 ,给出了实验结果 。
关键词 薄膜光电阴极 光电发射 金属光敏薄膜 寿命实验
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Characterization and photoelectrochemical performance of Zn-doped TiO_2 films by sol-gel method 被引量:9
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作者 Li-ying QIAO Feng-yu XIE +3 位作者 Ming-hui XIE Cai-hua GONG Wei-lang WANG Jia-cheng GAO 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第8期2109-2116,共8页
Zn-doped TiO2 (Zn?TiO2) thin films were prepared by the sol?gel method on titanium substrates with heat treatment at different temperatures. The effects of heat treatment temperatures and Zn doping on the structure, p... Zn-doped TiO2 (Zn?TiO2) thin films were prepared by the sol?gel method on titanium substrates with heat treatment at different temperatures. The effects of heat treatment temperatures and Zn doping on the structure, photocathodic protection and photoelectrochemical properties of TiO2 thin films were investigated. It is indicated that the photoelectrical performance of the Zn?TiO2 films is enhanced with the addition of Zn element compared with the pure-TiO2 film and the largest decline by 897 mV in the electrode potential is achieved under 300 °C heat treatment. SEM?EDS analyses show that Zn element is unevenly distributed in Zn?TiO2 films; XRD patterns reveal that the grain size of Zn?TiO2 is smaller than that of pure-TiO2; FTIR results indicate that Zn - O bond forms on Zn?TiO2 surface. Ultraviolet visible absorption spectra prove that Zn?TiO2 shifts to visible light region.Mott?Shottky curves show that the flat-band potential of Zn?TiO2 is more negative and charge carrier density is bigger than that ofpure-TiO2, implying that under the synergy of the width of the space-charge layer, carrier density and flat-band potential, Zn?TiO2 with 300 °C heat treatment displays the best photocathodic protection performance. 展开更多
关键词 TiO2 films Zn-doping photocathodic protection photoelectrochemical activity sol.gel method
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Suppression of charge recombination by application of CueZnSnS4-graphene counter electrode to thin dye-sensitized solar cells 被引量:1
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作者 Yan Li Huafei Guo +2 位作者 Xiuqin Wang Ningyi Yuan Jianning Ding 《Science Bulletin》 SCIE EI CAS CSCD 2016年第15期1221-1230,共10页
This paper proposes a new mechanism to explain the performance of thin dye-sensitized solar cells (DSSC). Near-stoichiometric flower-like Cu2ZnSnS4 (CZTS) microspheres with a high specific surface area was fabri- ... This paper proposes a new mechanism to explain the performance of thin dye-sensitized solar cells (DSSC). Near-stoichiometric flower-like Cu2ZnSnS4 (CZTS) microspheres with a high specific surface area was fabri- cated for use as the photocathode in a DSSC. To improve the extraction and transfer of electrons, graphene was added to the CZTS. A DSSC with a 10-gin TiO2 pho- toanode layer exhibited a slightly degraded efficiency with a CZTS-graphene photocathode, relative to a Pt counter electrode (CE). Nevertheless, when the thickness of the TiO2 photoanode was reduced to 2 lam, the efficiency of a DSSC with a CZTS-graphene photocathode was greater than that of a Pt-DSSC. It is speculated that, unlike the Pt CE, a CZTS-graphene photocathode not only collects electrons from an external circuit and catalyzes the reduction of the triiodide ions in the electrolyte, but also utilizes unabsorbed photons to produce photo-excited electrons and suppresses charge recombination, thus enhancing the performance of the cell. The use of narrowband gap p-type semiconductors as photocathodes offers a new means of fabricating thin dye-sensitized solar cells and effectively improving the cell performance. 展开更多
关键词 Dye-sensitized solar cell Cu2ZnSnS4-graphene Charge recombination
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