对1.2μ薄膜全耗尽SOI CMOS(TFD SOI CMOS)器件和电路进行了研究,硅膜厚度为 80nm。器件采用LDD结构,以提高击穿电压、抑制断沟道效应和热载流子效应;对沟道掺杂能量和剂量进行了摸索,确保一定的开启电压和器件的全耗尽;为了减小"...对1.2μ薄膜全耗尽SOI CMOS(TFD SOI CMOS)器件和电路进行了研究,硅膜厚度为 80nm。器件采用LDD结构,以提高击穿电压、抑制断沟道效应和热载流子效应;对沟道掺杂能量和剂量进行了摸索,确保一定的开启电压和器件的全耗尽;为了减小"鸟嘴",进行了PBL(Poly-Buffered LOCOS)隔离技术研究;溅Ti硅化物技术,使方阻过大问题得以解决。经过工艺流片,获得了性能良好的器件和电路。展开更多
A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorp...A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo4o-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark （dark current） and under 570 nm illumination （photo current） were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 /am. The results show that the photo-to-dark current ratio is 2.0×10^7, with dark current of around 5×10^-4 pA under VGK=0.6 V, PrN=5 mW/cm2, for a total area of 10μm×10μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.展开更多
基金Project(61040061) supported by the National Natural Science Foundation of ChinaProject supported by Hunan Provincial Innovation Foundation for Postgraduate Students,China
文摘A novel device, lateral PIN photodiode gated by transparent electrode （LPIN PD-GTE） fabricated on fully-depleted SOI film was proposed. ITO film was adopted in the device as gate electrode to reduce the light absorption. Thin Si film was fully depleted under gate voltage to achieve low dark current and high photo4o-dark current ratio. The model of gate voltage was obtained and the numerical simulations were presented by ATLAS. Current-voltage characteristics of LPIN PD-GTE obtained in dark （dark current） and under 570 nm illumination （photo current） were studied to achieve the greatest photo-to-dark current ratio for active channel length from 2 to 12 /am. The results show that the photo-to-dark current ratio is 2.0×10^7, with dark current of around 5×10^-4 pA under VGK=0.6 V, PrN=5 mW/cm2, for a total area of 10μm×10μm in fully depleted SOI technology. Thus, the LPIN PD-GTE can be suitable for high-grade photoelectric systems such as blue DVD.
