The Indium Tin Oxide films have been prepared at different substrate-temperamre on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 1.3 × 10^-1Pa and a deposition rate of 10.2 nr...The Indium Tin Oxide films have been prepared at different substrate-temperamre on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 1.3 × 10^-1Pa and a deposition rate of 10.2 nrrds. The best ITO films obtained have an electrical resistivity of 4.35 × 10^4 Ω.cm, a carrier concentration of 4,02 × 10^2o cm^-3 and a Hall mobility of 67.5 cm2wlsI. The influence of the substrate-temperamre on the structural, optical and electrical properties of the obtained films has been investigated.展开更多
The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra...The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO2 films. The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.展开更多
Various ocean energy technologies have been developed that harness several kinds of renewable energy resources of the ocean. However, these technologies suffer from problems such as high construction and maintenance c...Various ocean energy technologies have been developed that harness several kinds of renewable energy resources of the ocean. However, these technologies suffer from problems such as high construction and maintenance costs, restrictive installation requirements and damage by extraordinary weather conditions. In this paper, we propose a lightweight and FPGD （flexible power generation device） that overcomes these problems. The FPGD essentially consists of piezoelectric films and silicon rubber. Because the FPGD is small and flexible, it is anticipated to efficiently convert fluid energy into electrical energy even when the fluid energy is low. We perform several experiments to confirm the effectiveness of the FPGD and we discuss the results.展开更多
The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation l...The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation luminance peaks during decay are observed. A model description for energy transfer has been proposed. The experimental results can be theoretically explained with the computer curve fittings.展开更多
The zinc sulfide electroluminescence(EL) thin film doped with erbium,fabricated by thermal evaporation with two boats,are made and analyzed by the technology of X-ray photoelectron spectroscopy.The information of surf...The zinc sulfide electroluminescence(EL) thin film doped with erbium,fabricated by thermal evaporation with two boats,are made and analyzed by the technology of X-ray photoelectron spectroscopy.The information of surface states of the microcrystalline thin films is obtained.The transient EL spectroscopy of the thin film devices is measured and simulated by the formulae of different energy transfer mechanism.The results indicate that the formula of Gaussian line shape can fit well for description of transient EL process of zinc sulfide thin film doped with erbium.It shows that the surface states have important effect on the relaxation peaks during the decay process of EL for the thin film devices.展开更多
Near infrared electroluminescence characteristics of the Er-doped ZnS thin film devices,fabricated by thermal evaporation with two boats, are reported. The study of the film microstructure has been carried out using X...Near infrared electroluminescence characteristics of the Er-doped ZnS thin film devices,fabricated by thermal evaporation with two boats, are reported. The study of the film microstructure has been carried out using X-ray diffraction. The effects of the Er-doped film microstructure on luminescence are pointed out.展开更多
Ag nanoparticles grown on reduced CeO2-x thin films have been studied by X-ray plhotoelec- tron spectroscopy and resonant photoelectron spectroscopy of the valence band to understand the effect of oxygen vacancies in ...Ag nanoparticles grown on reduced CeO2-x thin films have been studied by X-ray plhotoelec- tron spectroscopy and resonant photoelectron spectroscopy of the valence band to understand the effect of oxygen vacancies in the CeO2-x thin films on the growth and interracial elec- tronic properties of Ag. Ag grows as three-dimensional particles on the CeO2-x （111） surface at 300 K. Compared to the fully oxidized ceria substrate surface, Ag favors the growth of smaller particles with a larger particle density on the reduced ceria substrate surface, which can be attributed to the nucleation of Ag on oxygen vacancies. The binding energy of Ag3d increases when the Ag particle size decreases, which is mainly attributed to the final-state screening. The interracial interaction between Ag and CeO2_x（lll） is weak. The resonant enhancement of the 4f level of Ce3＋ species in RPES indicates a partial Ce4＋--＋Ce3＋ reduction after Ag deposited on reduced ceria surface. The sintering temperature of Ag on CeO 1.85 （111） surface during annealing is a little higher than that of Ag on CeO2 （111） surface, indicating that Ag nanoparticles are more stable on the reduced ceria surface.展开更多
CIS （Cu-InSe） thin films were prepared onto glass substrate by the two stage process--generally called bilayer process. At first, Cu layer was deposited onto glass substrate by electron beam evaporation technique an...CIS （Cu-InSe） thin films were prepared onto glass substrate by the two stage process--generally called bilayer process. At first, Cu layer was deposited onto glass substrate by electron beam evaporation technique and then InSe single layer was deposited on the resulting Cu layer to produce CIS thin film. XRD （X-ray diffraction） analysis revealed that deposited film has an amorphous nature. Electrical resistivity measurements were carried out as a function of temperature during heating and cooling cycles in air. The heating and cooling cycles of the sample are almost reversible after successive heat-treatment in air. In order to consider the influence of the InSe upper layer on the optical properties, the thickness of the InSe upper layer in the CIS films was varied from 50 to 150 nm. Analysis of the transmittance and reflectance spectra, recorded in the wavelength range of 400-1,100 nm, revealed that the CIS films have high absorption coefficient of-104 cm1. The direct band gap varies from 1.40 to 1.22 eV. The refractive index, the extinction coefficient and the dielectric constant of the CIS films depend on the film thickness.展开更多
基金Project of Key Science and Technologyof Tianjin (No.06YFGZGX02100)Projects of National Key Fun-damental Research Development Plan of China (Nos.2006CB202602, 2006CB202603)Natural Science Founda-tion of Tianjin (Nos.05YFJMJC01600,06YFJZJC 01700)
文摘The Indium Tin Oxide films have been prepared at different substrate-temperamre on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 1.3 × 10^-1Pa and a deposition rate of 10.2 nrrds. The best ITO films obtained have an electrical resistivity of 4.35 × 10^4 Ω.cm, a carrier concentration of 4,02 × 10^2o cm^-3 and a Hall mobility of 67.5 cm2wlsI. The influence of the substrate-temperamre on the structural, optical and electrical properties of the obtained films has been investigated.
文摘The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO2 films. The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.
文摘Various ocean energy technologies have been developed that harness several kinds of renewable energy resources of the ocean. However, these technologies suffer from problems such as high construction and maintenance costs, restrictive installation requirements and damage by extraordinary weather conditions. In this paper, we propose a lightweight and FPGD （flexible power generation device） that overcomes these problems. The FPGD essentially consists of piezoelectric films and silicon rubber. Because the FPGD is small and flexible, it is anticipated to efficiently convert fluid energy into electrical energy even when the fluid energy is low. We perform several experiments to confirm the effectiveness of the FPGD and we discuss the results.
文摘The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation luminance peaks during decay are observed. A model description for energy transfer has been proposed. The experimental results can be theoretically explained with the computer curve fittings.
文摘The zinc sulfide electroluminescence(EL) thin film doped with erbium,fabricated by thermal evaporation with two boats,are made and analyzed by the technology of X-ray photoelectron spectroscopy.The information of surface states of the microcrystalline thin films is obtained.The transient EL spectroscopy of the thin film devices is measured and simulated by the formulae of different energy transfer mechanism.The results indicate that the formula of Gaussian line shape can fit well for description of transient EL process of zinc sulfide thin film doped with erbium.It shows that the surface states have important effect on the relaxation peaks during the decay process of EL for the thin film devices.
文摘Near infrared electroluminescence characteristics of the Er-doped ZnS thin film devices,fabricated by thermal evaporation with two boats, are reported. The study of the film microstructure has been carried out using X-ray diffraction. The effects of the Er-doped film microstructure on luminescence are pointed out.
文摘Ag nanoparticles grown on reduced CeO2-x thin films have been studied by X-ray plhotoelec- tron spectroscopy and resonant photoelectron spectroscopy of the valence band to understand the effect of oxygen vacancies in the CeO2-x thin films on the growth and interracial elec- tronic properties of Ag. Ag grows as three-dimensional particles on the CeO2-x （111） surface at 300 K. Compared to the fully oxidized ceria substrate surface, Ag favors the growth of smaller particles with a larger particle density on the reduced ceria substrate surface, which can be attributed to the nucleation of Ag on oxygen vacancies. The binding energy of Ag3d increases when the Ag particle size decreases, which is mainly attributed to the final-state screening. The interracial interaction between Ag and CeO2_x（lll） is weak. The resonant enhancement of the 4f level of Ce3＋ species in RPES indicates a partial Ce4＋--＋Ce3＋ reduction after Ag deposited on reduced ceria surface. The sintering temperature of Ag on CeO 1.85 （111） surface during annealing is a little higher than that of Ag on CeO2 （111） surface, indicating that Ag nanoparticles are more stable on the reduced ceria surface.
文摘CIS （Cu-InSe） thin films were prepared onto glass substrate by the two stage process--generally called bilayer process. At first, Cu layer was deposited onto glass substrate by electron beam evaporation technique and then InSe single layer was deposited on the resulting Cu layer to produce CIS thin film. XRD （X-ray diffraction） analysis revealed that deposited film has an amorphous nature. Electrical resistivity measurements were carried out as a function of temperature during heating and cooling cycles in air. The heating and cooling cycles of the sample are almost reversible after successive heat-treatment in air. In order to consider the influence of the InSe upper layer on the optical properties, the thickness of the InSe upper layer in the CIS films was varied from 50 to 150 nm. Analysis of the transmittance and reflectance spectra, recorded in the wavelength range of 400-1,100 nm, revealed that the CIS films have high absorption coefficient of-104 cm1. The direct band gap varies from 1.40 to 1.22 eV. The refractive index, the extinction coefficient and the dielectric constant of the CIS films depend on the film thickness.
