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带隙可调铌酸钾基铁电薄膜制备与物性研究
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作者 胡澳月 丁宇 +1 位作者 祖丽胡马尔·图尔荪 李传青 《上海师范大学学报(自然科学版)》 2022年第4期401-406,共6页
以钡镍元素共掺形成的铌酸钾-铌镍酸钡薄膜(1-x)KNbO_(3)-xBaNi_(0.5)Nb_(0.5)O_(3-δ)(KNxBNNO)为主要研究对象,围绕其材料发展趋势:高质量铌酸钾-铌镍酸钡薄膜材料的关键制备技术、铌酸钾-铌镍酸钡薄膜的微结构、元素化合价和拉曼声... 以钡镍元素共掺形成的铌酸钾-铌镍酸钡薄膜(1-x)KNbO_(3)-xBaNi_(0.5)Nb_(0.5)O_(3-δ)(KNxBNNO)为主要研究对象,围绕其材料发展趋势:高质量铌酸钾-铌镍酸钡薄膜材料的关键制备技术、铌酸钾-铌镍酸钡薄膜的微结构、元素化合价和拉曼声子模式等内容进行了研究. 展开更多
关键词 可调KN-xBNNO铁电薄膜 化学溶液沉积 结构与物性 光学吸收性能
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溅射气压对HfO_2薄膜结构和光学性能的影响 被引量:3
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作者 马紫微 苏玉荣 +4 位作者 谢毅柱 赵海廷 刘利新 李健 谢二庆 《材料导报》 EI CAS CSCD 北大核心 2012年第10期16-18,22,共4页
HfO2薄膜的结构和光学性能与反应溅射时使用的气压有很强的依赖关系。薄膜的晶粒生长取向、生长速率和折射率明显受溅射气压的影响。所有的薄膜均为单斜相,晶粒尺寸在纳米量级。薄膜的折射率在1.92~2.08范围内变化,透过率大于85%。结... HfO2薄膜的结构和光学性能与反应溅射时使用的气压有很强的依赖关系。薄膜的晶粒生长取向、生长速率和折射率明显受溅射气压的影响。所有的薄膜均为单斜相,晶粒尺寸在纳米量级。薄膜的折射率在1.92~2.08范围内变化,透过率大于85%。结果表明,这些HfO2薄膜很适宜用作增透膜或者高反膜。此外,通过Tauc公式推出光学带隙在5.150~5.433eV范围内变化,表明样品是良好的绝缘体。 展开更多
关键词 HfO2薄膜溅射法光学性能光学
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基于金属掺杂ITO透明导电层的紫外LED制备 被引量:2
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作者 文如莲 胡晓龙 +2 位作者 高升 梁思炜 王洪 《发光学报》 EI CAS CSCD 北大核心 2018年第12期1735-1742,共8页
为降低ITO薄膜对紫外波段的光吸收,制备低电压高功率的紫外LED,研究了一种基于金属掺杂ITO透明导电层的365nm紫外LED的制备工艺。利用1cm厚的石英片生长了不同厚度ITO薄膜以及在ITO上掺杂不同金属的新型薄膜,并研究了在不同的退火条件... 为降低ITO薄膜对紫外波段的光吸收,制备低电压高功率的紫外LED,研究了一种基于金属掺杂ITO透明导电层的365nm紫外LED的制备工艺。利用1cm厚的石英片生长了不同厚度ITO薄膜以及在ITO上掺杂不同金属的新型薄膜,并研究了在不同的退火条件下这种薄膜的电阻和透过率,分析了掺杂金属ITO薄膜的带隙变化。将这种掺杂的ITO薄膜生长在365nm外延片上并完成电极生长,制备成14mil×28mil的正装LED芯片。利用电致发光(EL)设备对LED光电性能进行测试并对比。实验结果表明:掺Al金属的ITO薄膜能够相对ITO薄膜的带隙提高0.15eV。在600℃退火后,方块电阻降低6.2Ω/□,透过率在356nm处达到90.8%。在120mA注入电流下,365nmLED的电压降低0.3V,功率提高14.7%。ITO薄膜掺金属能够影响薄膜带隙,改变紫光LED光电性能。 展开更多
关键词 ITO 掺金属 薄膜带隙 紫外LED
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Preparation and Properties of C-axis Oriented PT/PEK-c Films
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作者 GUOSY RENQ 《Semiconductor Photonics and Technology》 CAS 2001年第4期209-211,229,共4页
The preparation of PT/PEK c films is reported as well as their dielectric and optical properties. The c axis orientation ratio of the films is 68%. Dielectric constant and loss factor at 10 kHz is about 4.023 F/m and ... The preparation of PT/PEK c films is reported as well as their dielectric and optical properties. The c axis orientation ratio of the films is 68%. Dielectric constant and loss factor at 10 kHz is about 4.023 F/m and 0.003, respectively. The refractive indices of the films, n e and n o, are 1.657 3 and 1.627 8 at 0.63 μm wavelength, respectively. The optical band gap of the film with a thickness of 2.33 μm is found to be 3.06 eV. 展开更多
关键词 PT/PEK c films Orientation ratio Dielectric Optical band gap
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Tradeoffbetween Narrowing Optical Band Gap and Enhancing Electrical Conductivity of the Metal Nanoparticles-Modified Titanium Oxide Films
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作者 Aung Chan Thar Thaung Hlaing Win +1 位作者 Nyein Wint Lwin Than Zaw Oo 《Journal of Physical Science and Application》 2015年第3期220-225,共6页
The n-type semiconducting titanium oxide thin films are well-known as electron transporting interlayer in photovoltaic cells. The favorable characteristics of interlayers in photovoltaics are high optical transmittan... The n-type semiconducting titanium oxide thin films are well-known as electron transporting interlayer in photovoltaic cells. The favorable characteristics of interlayers in photovoltaics are high optical transmittance (T%), wide band gap energy (Eg) and high electrical conductivity (σ). Modifying titanium oxide films with metal nanoparticles would increase electrical conductivity but reduce optical band gap energy. We developed the sol-gel derived titanium suboxide (TiOx) films modified with silver (Ag) or gold (Au) or copper (Cu) nanoparticles (NPs). This study explores a tradeoff between narrowing optical band gap and enhancing electrical conductivity of nanostructured TiOx films by controlling the Au- or Ag- or Cu-NPs loading concentrations (mol%) in titania. The Au- and Cu-NPs loading concentration of 4 mol% should meet a tradeoff which yields the higher T%, wider Eg and higher compared to those of pure TiOx films. In addition, since the pure Cu is not thermodynamically stable in ambience as compared to Au and Ag, the stability of as-obtained colloidal CuNPs is also examined. A careful examination of the time evolution of surface plasmon resonance (SPR) bands of CuNPs indicates that their stability is only up to 4 h. 展开更多
关键词 Titanium suboxide metal nanoparticles electrical conductivity band gap energy.
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Study of colors of diamond-like carbon films 被引量:1
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作者 LI QiongYu WANG FuMing ZHANG Ling 《Science China Chemistry》 SCIE EI CAS 2013年第3期545-550,共6页
Reflective and transmissive film interference colors were calculated for DLC films on the Si and SiO 2 substrates.The calculated interference colors were compared with photographed colors of the prepared DLC samples.T... Reflective and transmissive film interference colors were calculated for DLC films on the Si and SiO 2 substrates.The calculated interference colors were compared with photographed colors of the prepared DLC samples.The observed film colors were found to match reasonably well with the corresponding calculated colors,indicating that DLC film colors come from interference instead of color center effects.Color charts for DLC films on the Si and SiO 2 substrates with various optical gaps were constructed,and the relationship between interference color and film properties such as optical gap,thickness and substrate were investigated.Usefulness of the calculated color charts in estimating optical gap or thickness of DLC films were demonstrated. 展开更多
关键词 DLC film color interference color color center color chart
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Topological crystalline insulator nanomembrane with strain-tunable band gap 被引量:5
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作者 Xiaofeng Qian Liang Fu Ju Li 《Nano Research》 SCIE EI CAS CSCD 2015年第3期967-979,共13页
The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we propose that the electronic properties of free-standing nanome... The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we propose that the electronic properties of free-standing nanomernbranes of the topological crystalline insulators (TCI) SnTe and Pb1-xSnx(Se,Te) are highly tunable by engineering elastic strain and membrane thickness, resulting in tunable band gap and giant piezoconductivity. Membrane thickness governs the hybridization of topological electronic states on opposite surfaces, while elastic strain can further modulate the hybridization strength by controlling the penetration length of surface states. We propose a frequency-resolved infrared photodetector using force-concentration induced inhomogeneous elastic strain in TCI nanomembranes with spatially varying width. The predicted tunable band gap accompanied by strong spin-textured electronic states will open new avenues for fabricating piezoresistive devices, infrared detectors and energy-efficient electronic and spintronic devices based on TCI nanomembrane. 展开更多
关键词 elastic strain engineering pseudoheterostructure infrared photodetector METAL-INSULATORTRANSITION DFT calculations
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Synthesis and properties of copolymers based on 5,6-dinitrobenzothiadiazole with low band gap and broad absorption spectra 被引量:1
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作者 WANG Fei LIU YongSheng WAN XiangJian ZHOU JiaoYan CHEN YongSheng 《Science China Chemistry》 SCIE EI CAS 2011年第4期617-624,共8页
One polythiophene derivative PT3T and two low band gap copolymers,PBTT-T3T and PBTT,with different ratios of 5,6-dini-trobenzothiadiazole as the acceptor unit in the polymer backbone have been synthesized by Pd-cataly... One polythiophene derivative PT3T and two low band gap copolymers,PBTT-T3T and PBTT,with different ratios of 5,6-dini-trobenzothiadiazole as the acceptor unit in the polymer backbone have been synthesized by Pd-catalyzed Stille-coupling polymerizations.Thermal stability,X-ray diffraction analyses,UV-vis absorption spectra,photoluminescence spectra and electrochemical properties of the copolymers were investigated.The band gap estimated from UV-vis-NIR spectra of the copolymers films varied from 1.39 to 1.94 eV.Among these copolymers,the films of PBTT-T3T and PBTT,which contain the 5,6-dinitrobenzothiadiazole unit,cover a broad wavelength range in the visible and near-infrared region from 400 to 1000 nm with the maximal peak absorption around 700 nm,which is exactly matched with the maximum in the photon flux of the sun. 展开更多
关键词 COPOLYMER broad absorption low band gap charge transfer
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Influence of annealing on the structural,optical and electrical properties of indium oxide films deposited on c-sapphire substrate
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作者 赵鸿铎 弭伟 +1 位作者 张楷亮 赵金石 《Optoelectronics Letters》 EI 2016年第1期39-42,共4页
Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respec... Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively. 展开更多
关键词 ANNEALING Energy gap Hall mobility INDIUM Metallorganic chemical vapor deposition Organic chemicals ORGANOMETALLICS SAPPHIRE SUBSTRATES X ray diffraction analysis
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