期刊文献+
共找到13篇文章
< 1 >
每页显示 20 50 100
射频反应溅射制备SnO_2薄膜机理研究
1
作者 马黎君 《北京建筑工程学院学报》 2003年第1期72-76,共5页
SnO2 薄膜的成膜机制是研究其结构的一项重要内容 ,本文就射频反应溅射成膜过程中影响成膜质量的因素进行了讨论 ,给出了薄膜形成过程的初步模型 。
关键词 SNO2薄膜 射频 薄膜机理
下载PDF
电化学技术制备BaMoO_4薄膜的初期生长特性(英文)
2
作者 杨祖念 安红娜 +3 位作者 肖定全 余萍 陈连平 王辉 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2008年第A02期248-251,共4页
采用恒电流电化学技术直接在金属钼片上制备了具有白钨矿结构的钼酸盐(BaMoO4)薄膜。对BaMoO4薄膜进行了SEM测试,并对相应的测试结果进行了对比和分析。研究表明,在薄膜生长初期,其生长特性具有若干显著的特点,包括:晶核和晶粒优先选择... 采用恒电流电化学技术直接在金属钼片上制备了具有白钨矿结构的钼酸盐(BaMoO4)薄膜。对BaMoO4薄膜进行了SEM测试,并对相应的测试结果进行了对比和分析。研究表明,在薄膜生长初期,其生长特性具有若干显著的特点,包括:晶核和晶粒优先选择在基体缺陷处堆砌和生长;生长初期形成的晶核都具有白钨矿结构的骨架;晶核和刚开始长大生成的晶粒都是疏松的;晶粒都明显显示有蜂窝状空隙存在等。在薄膜生长的初始阶段,晶粒基本上以其c轴垂直于薄膜基体表面进行生长;随着薄膜制备时间的延长,晶粒的生长方向倾向于按其c轴在薄膜的表面内的方向进行生长。 展开更多
关键词 电化学技术 BAMOO4 白钨矿结构 薄膜成核机理
下载PDF
单层聚对苯乙炔薄膜器件载流子的注入和传输
3
作者 黄生祥 彭景翠 +2 位作者 夏辉 李宏建 瞿述 《湖南大学学报(自然科学版)》 EI CAS CSCD 北大核心 2002年第1期29-32,共4页
从实验事实出发 ,根据不同注入情形分析了载流子的注入和传输 ,数值计算了载流子注入时的电流 ,阐述了各种因素对所注入电流的影响 ,简单地介绍了所注入的载流子在输运过程中 ,其密度在各种注入情形下随聚对苯乙炔 ( PPV)
关键词 PPV薄膜 注入 传输 注入势垒 聚对苯乙炔薄膜 载流子 注入电流 薄膜发光机理
下载PDF
果蔬微孔包装膜开孔模型的建立与验证 被引量:1
4
作者 余立 林渊智 王永祥 《包装工程》 CAS 北大核心 2023年第23期111-117,共7页
目的建立一种能够有效控制果蔬气调包装袋内气体浓度的微孔膜开孔模型,以便有效延长果蔬保质期。方法通过分析气体在薄膜微孔中的透气机理,并结合原膜透气机理和果蔬自身呼吸速率,建立薄膜开孔模型。以樱桃为包装对象,通过对比包装容器... 目的建立一种能够有效控制果蔬气调包装袋内气体浓度的微孔膜开孔模型,以便有效延长果蔬保质期。方法通过分析气体在薄膜微孔中的透气机理,并结合原膜透气机理和果蔬自身呼吸速率,建立薄膜开孔模型。以樱桃为包装对象,通过对比包装容器内实测气体浓度与预测气体浓度,判别开孔模型的准确性。结果开孔模型3-1设计的包装方案,其内部实测氧气浓度与预测氧气浓度最吻合;模型1-1与模型1-2计算的开孔方案其孔径达到毫米级,开孔数量达到100,不适合用于薄膜开孔。模型3-2、模型2-1和模型2-2设计的包装方案,其内部实测气体浓度与预测气体浓度不一致。结论微孔直径大小会直接影响气体分子在微孔中的扩散形式和开孔模型的准确性。当微孔直径在100μm时,利用Fick定律和Kundsen定律的扩散系数Dk构建的数学模型能够准确地控制包装袋内的O_(2)浓度与CO_(2)浓度,依据该模型制作的微孔气调包装袋能够有效延长樱桃的保质期。 展开更多
关键词 开孔模型 微孔膜 薄膜透气机理
下载PDF
足尺钢框架结构中楼板火灾行为数值分析 被引量:5
5
作者 王勇 郭文轩 +4 位作者 李凌志 简晓红 马帅 张耕源 赵行行 《工程力学》 EI CSCD 北大核心 2021年第7期133-146,共14页
为研究受火跨位置和数量对结构中混凝土楼板火灾行为影响,基于Vulcan软件,采用厚板单元和梁柱杆单元,结合EC2材料高温本构模型,对钢框架结构中受火顶层楼板(角区格和中区格)和第二层楼板(四区格)的温度和变形进行数值模拟,分析了混凝土... 为研究受火跨位置和数量对结构中混凝土楼板火灾行为影响,基于Vulcan软件,采用厚板单元和梁柱杆单元,结合EC2材料高温本构模型,对钢框架结构中受火顶层楼板(角区格和中区格)和第二层楼板(四区格)的温度和变形进行数值模拟,分析了混凝土膨胀应变对火灾下结构中楼板受火区格变形的影响规律,考察了受火板格薄膜机理、裂缝分布和钢梁内力发展规律。结果表明:楼板温度和变形计算结果与试验结果总体吻合较好,且混凝土膨胀应变对结构中受火区格跨中变形有决定性影响,即膨胀应变取值较大时,计算变形较大;边界条件对受火板格薄膜机理和裂缝分布有决定性影响,且受火板格可分为环型、对边U型和对角U型三种薄膜机理;受火板格附近钢梁弯矩和轴力逐渐增加,且钢梁轴力增加幅度相对较大。 展开更多
关键词 钢框架 火灾 数值模拟 楼板 薄膜机理 内力
下载PDF
Preparation, formation mechanism and mechanical properties of multilayered TiO_2-organic nanocomposite film 被引量:2
6
作者 牟文宁 翟玉春 石双志 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第4期1128-1134,共7页
Ti O2-organic multilayered nanocomposite films were deposited on a self-assembled monolayer-coated silicon substrate based on layer-by-layer technique and chemical bath deposition method by a hydrolysis of Ti Cl4 in a... Ti O2-organic multilayered nanocomposite films were deposited on a self-assembled monolayer-coated silicon substrate based on layer-by-layer technique and chemical bath deposition method by a hydrolysis of Ti Cl4 in an acid aqueous solution. The chemical compositions, surface morphologies and mechanical properties of the films were investigated by X-ray photoelectron spectrometer(XPS), scanning electron microscopy(SEM) and nanoindentation depth-sensing technique, respectively. The results indicate that the major chemical compositions of the films are Ti and O. The principal mechanism for the nucleation and growth of the films is homogeneous nucleation, and the layer number of films has great influence on the surface morphology and roughness of the films. In addition, mechanical nanoindentation testing presents a significant increase in hardness and fracture toughness of titanium dioxide multilayered films compared with single-layer titanium dioxide thin film. 展开更多
关键词 titanium dioxide multilayered film self-assembly monolayer formation mechanism mechanical properties
下载PDF
Growth Mechanism of Microcrystalline Silicon Films by Scaling Theory and Monte Carlo Simulation 被引量:1
7
作者 訾威 周玉琴 +1 位作者 刘丰珍 朱美芳 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第8期1465-1468,共4页
Hydrogenated microcrystalline silicon (~c-Si:H) films with a high deposition rate of 1.2nm/s were prepared by hot-wire chemical vapor deposition (HWCVD). The growth-front roughening processes of the μc-Si..H fil... Hydrogenated microcrystalline silicon (~c-Si:H) films with a high deposition rate of 1.2nm/s were prepared by hot-wire chemical vapor deposition (HWCVD). The growth-front roughening processes of the μc-Si..H films were investi- gated by atomic force microscopy. According to the scaling theory, the growth exponent β≈0.67, the roughness exponent α≈0.80,and the dynamic exponent 1/z = 0.40 are obtained. These scaling exponents cannot be explained well by the known growth models. An attempt at Monte Carlo simulation has been made to describe the growth process of μc-Si: H film using a particle reemission model where the incident flux distribution,the type and concentration of growth radical, and sticking,reemission,shadowing mechanisms all contributed to the growing morphology. 展开更多
关键词 μc-Si:H growth mechanism scaling theory Monte Carlo simulations reemission process
下载PDF
SUCCESSFUL EXTRACORPOREAL MEMBRANE OXYGENATION SUPPORT IN A PATIENT WITH FULMINANT MYOCARDITIS 被引量:1
8
作者 Yong Yuan Jian-ting Dong Xuan-sheng Huang Li-ting Zhang Bin-fei Li Zhi-gang Zhang Ying Han 《Chinese Medical Sciences Journal》 CAS CSCD 2006年第3期194-196,共3页
FULMINANT myocarditis complicated with refractory cardiogenic shock carries a very high mortality (76%). Herein we report our experi-ence in treating a 23-year-old Chinese woman with fulminant myocarditis complicate... FULMINANT myocarditis complicated with refractory cardiogenic shock carries a very high mortality (76%). Herein we report our experi-ence in treating a 23-year-old Chinese woman with fulminant myocarditis complicated with cardiogenic shock, who was rescued by extracorporeal membrane oxygenation (ECMO). 展开更多
关键词 extracorporeal membrane oxygenation fulminant myocarditis TREATMENT
下载PDF
Growth mechanism of a preferentially oriented mordenite membrane
9
作者 厉刚 林瑞森 +1 位作者 KIKUCHI Eiichi MATSUKATA Masahiko 《Journal of Zhejiang University-Science B(Biomedicine & Biotechnology)》 SCIE EI CAS CSCD 2005年第5期369-372,共4页
A preferentially oriented mordenite membrane was successfully prepared on a seeded porous α-alumina support. Characterization results of XRD (X-ray diffractometer) and FE-SEM (field emission scanning electron microsc... A preferentially oriented mordenite membrane was successfully prepared on a seeded porous α-alumina support. Characterization results of XRD (X-ray diffractometer) and FE-SEM (field emission scanning electron microscope) revealed that evolutionary selection might predominantly contribute to the formation of the sharply oriented mordenite membrane. The nec- essary conditions under which evolutionary selection occurs are: (a) the number density of nuclei on the support surface should be high enough at the early stage; (b) the crystals should grow fastest along one direction; and (c) the zeolite layer should proceed via the successive growth of the crystals nucleated on the support surface instead of the accumulation of the crystals formed in the bulk solution. 展开更多
关键词 MORDENITE Zeolite membrane ORIENTATION Evolutionary selection
下载PDF
Chemical Vapor Deposition Mechanism of Copper Films on Silicon Substrates 被引量:1
10
作者 Song Wu Bo Tao +1 位作者 Yong-ping Shen Qi Wang 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 北大核心 2006年第3期248-252,共5页
A versatile metal-organic chemical vapor deposition (MOCVD) system was designed and constructed. Copper films were deposited on silicon (100) substrates by chemical vapor deposition (CVD) using Cu(hfac)2 as a ... A versatile metal-organic chemical vapor deposition (MOCVD) system was designed and constructed. Copper films were deposited on silicon (100) substrates by chemical vapor deposition (CVD) using Cu(hfac)2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu(hfac)2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode (island), and then transforms to Stranski-Rastanov mode (layer-by-layer plus island). The mechanism of Cu nucleation on silicon (100) substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu(hfac) formed by the thermal dissociation of Cu(hfac)2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu(hafc)2 and H2 occurs. 展开更多
关键词 Metal-organic chemical vapor deposition Copper film Silicon (100) Deposition reaction mechanism
下载PDF
Damage Mechanism of Optical Films by High-power Laser
11
作者 PAN Yingjun FENG Jun (Chongqing University, Chongqing 630044, CHN) 《Semiconductor Photonics and Technology》 CAS 1996年第3期199-203,213,共6页
From sevenal models about damage mechanism, the damage mechanism of optical films and the factors which affect the damage threshold are described experimentally and theoretically. Some reasonable proposals are given i... From sevenal models about damage mechanism, the damage mechanism of optical films and the factors which affect the damage threshold are described experimentally and theoretically. Some reasonable proposals are given in this paper on how to select the high-threshold films. 展开更多
关键词 LASER Optical Films DAMAGE
下载PDF
SiH_4/H_2等离子体气相生长硅薄膜的动力学模型 被引量:1
12
作者 文书堂 张红卫 +2 位作者 张丽伟 陈改荣 卢景霄 《物理学报》 SCIE EI CAS CSCD 北大核心 2010年第7期4901-4910,共10页
在化学气相沉积微晶硅薄膜过程中,为了降低成本,必须提高生长速率,但薄膜的微观结构和光电性能则随之降低,原因是成膜先驱物在薄膜表面上的扩散长度降低了.本文利用量子化学的反应动力学理论建立有关成膜先驱物SiH3和H的反应平衡方程,... 在化学气相沉积微晶硅薄膜过程中,为了降低成本,必须提高生长速率,但薄膜的微观结构和光电性能则随之降低,原因是成膜先驱物在薄膜表面上的扩散长度降低了.本文利用量子化学的反应动力学理论建立有关成膜先驱物SiH3和H的反应平衡方程,求解薄膜生长速率和成膜先驱物的扩散长度,并找出影响生长速率与扩散长度的微观参数,发现生长速率不仅与流向衬底的SiH3的通量密度有关,而且与H的通量密度有关;SiH3的扩散长度与衬底温度和薄膜表面的硅氢键的形态有关,当薄面表面被Si—H覆盖时,SiH3扩散长度较大,当薄面表面被Si—3H覆盖时,扩散长度较小,当薄面表面被悬键覆盖时,扩散长度趋于零. 展开更多
关键词 等离子体化学气相沉积 薄膜生长机理 扩散长度
原文传递
Reveal the growth mechanism in perovskite films via weakly coordinating solvent annealing 被引量:2
13
作者 Yafei Wang Detao Liu +9 位作者 Peng Zhang Ting Zhang Waseem Ahmad Xiangxiao Ying Feng Wang lian Li Li Chen liang Wu Zhi David Chen Shibin Li 《Science China Materials》 SCIE EI CSCD 2018年第12期1536-1548,共13页
In this study, we investigated the nucleation mechanism of perovskite films by employing isopropanol(IPA), a weakly coordinating solvent, to anneal both PbI2 and CH3 NH3 PbI3 in the sequential deposition and CsPbI3 in... In this study, we investigated the nucleation mechanism of perovskite films by employing isopropanol(IPA), a weakly coordinating solvent, to anneal both PbI2 and CH3 NH3 PbI3 in the sequential deposition and CsPbI3 in the one-step deposition. IPA solvent annealing(IPA SA) of PbI2 films was carried out at different temperatures. The grain size,compactness, roughness and morphology of PbI2 and CH3 NH3 PbI3 films were seriously affected by annealing methods. Similarly, weakly coordinating solvent annealing process was also employed to anneal all inorganic CsPbI3 perovskite in a one-step method. A continuous and dense CsPbI3 film with uniform grain size was obtained. We recognized that weakly coordinating solvent annealing for perovskite could regulate the dissolution-recrystallization process via controlling the volume of residual solvent in perovskite intermediate films. The power conversion efficiency(PCE) of conventional CH3 NH3 PbI3 perovskite solar cells(PSCs)reached 17.4% and that of CsPbI3 PSCs reached 2.5% based on this sequential IPA SA process. 展开更多
关键词 perovskite solar cells solvent annealing weak coordinating solvent recrystaUization
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部