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工艺参数对磁控反应溅射AlN薄膜沉积速率的影响 被引量:30
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作者 乔保卫 刘正堂 李阳平 《西北工业大学学报》 EI CAS CSCD 北大核心 2004年第2期260-263,共4页
采用射频磁控反应溅射法 ,以高纯 Al为靶材 ,高纯 N2 为反应气体 ,成功制备了氮化铝( Al N)薄膜。研究了 N2 气流量、射频功率、溅射气压等工艺参数对 Al N膜沉积速率的影响规律。结果表明 ,随着 N2 气流量的增加 ,靶面溅射由金属态过... 采用射频磁控反应溅射法 ,以高纯 Al为靶材 ,高纯 N2 为反应气体 ,成功制备了氮化铝( Al N)薄膜。研究了 N2 气流量、射频功率、溅射气压等工艺参数对 Al N膜沉积速率的影响规律。结果表明 ,随着 N2 气流量的增加 ,靶面溅射由金属态过渡到氮化态 ,沉积速率随之明显降低 ;沉积速率随射频功率的增大几乎成线性增大 ,随靶基距的增大而减小 ;随着溅射气压的增大 ,沉积速率不断增大 ,但在一定气压下达到最大值后 ,沉积速率又随气压不断减小。 展开更多
关键词 磁控反应溅射 AlN薄膜 沉积速率
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Cr薄膜沉积速率对AlGaInP发光二极管电压的影响
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作者 肖和平 朱迪 《材料科学与工程学报》 CAS CSCD 北大核心 2019年第5期823-827,共5页
研究了在Si基片上沉积Cr薄膜的沉积速率对薄膜残余应力、晶粒尺寸的影响,并进一步讨论薄膜电阻率与残余应力、晶粒尺寸的关系,该电阻率主要由电子在薄膜晶粒内运动及穿越薄膜晶界运动受到阻力而形成。结果表明:薄膜电阻率随残余应力、... 研究了在Si基片上沉积Cr薄膜的沉积速率对薄膜残余应力、晶粒尺寸的影响,并进一步讨论薄膜电阻率与残余应力、晶粒尺寸的关系,该电阻率主要由电子在薄膜晶粒内运动及穿越薄膜晶界运动受到阻力而形成。结果表明:薄膜电阻率随残余应力、晶粒尺寸的增加而变小。基于这一实验结果可以改善AlGaInP的LED正向工作电压。 展开更多
关键词 薄膜沉积速率 金属薄膜 晶粒尺寸 残余应力 正向电压
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PVD溅射技术在MEMS器件制作中的应用 被引量:1
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作者 王雄 吴学忠 《传感技术学报》 CAS CSCD 北大核心 2006年第05A期1434-1436,1440,共4页
简单介绍了PVD溅射系统和溅射原理.实验分析了PVD溅射技术在微晶玻璃基片溅射沉积Cu膜时,沉积速率随相关工艺参数变化而变化的几点规律.给出了用PVD溅射技术沉积的Cu膜的表面形貌(AFM)图和显微镜照片.
关键词 微机电系统 PVD溅射 薄膜沉积速率 原子力显微镜
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Growth Rate of a-Si∶H Film Influenced by Magnetic Field Gradient in MWECR CVD Plasma System 被引量:2
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作者 胡跃辉 吴越颖 +3 位作者 陈光华 王青 张文理 阴生毅 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第6期613-619,共7页
The magnetic field profiles,which are produced by three ways in the deposition chamber and plasma chamber of single coil divergent field MWECR CVD system,are investigated.The magnetic field gradient of these magnetic ... The magnetic field profiles,which are produced by three ways in the deposition chamber and plasma chamber of single coil divergent field MWECR CVD system,are investigated.The magnetic field gradient of these magnetic field profiles is obtained quantitatively by using Lorentz fit.The results indicate that the gradient value of the magnetic field profile near by the substrate,which is produced by a coil current with 137.7A if a SmCo permanent magnet is equipped under the substrate holder,is the largest;when the SmCo permanent magnet is taken away,the larger one is produced by the coil current with 137.7A and the smallest one produced by a coil current with 115.2A.High deposition rate of a-Si∶H film is observed near by the substrate with high magnetic field gradient.But uneven deposition rate along the radius of the sample holder is also found by infrared analysis technology when sample is deposited in magnetic field profile,which is produced by the coil current with 137.7A if the SmCo permanent magnet is equipped under the substrate holder. 展开更多
关键词 magnetic field gradient Lorentz fit a-Si∶H film deposition rate MWECR CVD deposition system
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High-Throughput Multi-Plume Pulsed-Laser Deposition for Materials Exploration and Optimization 被引量:2
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作者 Samuel S.Mao Xiaojun Zhang 《Engineering》 SCIE EI 2015年第3期367-371,共5页
A high-throughput multi-plume pulsed-laser deposition (MPPLD) system has been demonstrated and compared to previous techniques. Whereas most combinatorial pulsedlaser deposition (PLD) systems have focused on achie... A high-throughput multi-plume pulsed-laser deposition (MPPLD) system has been demonstrated and compared to previous techniques. Whereas most combinatorial pulsedlaser deposition (PLD) systems have focused on achieving thickness uniformity using sequential multilayer deposition and masking followed by post-deposition annealing, MPPLD directly deposits a compositionally varied library of compounds using the directionality of PLD plumes and the resulting spatial variations of deposition rate. This system is more suitable for high-throughput compound thin-film fabrication. 展开更多
关键词 pulsed-laser deposition HIGH-THROUGHPUT
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