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论SBEMB型薄膜电磁线线芯发黑及其影响 被引量:1
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作者 周新民 《大电机技术》 北大核心 2003年第1期64-65,共2页
SBEMB线即双玻璃丝包薄膜绕包铜扁线 ,是大型电机的关键材料之一 ,它的质量对电机质量有致命影响。但在生产中 ,常发现其线芯有发黑现象。本文对发黑物的化学成分、发黑原因、对电机的影响及防止发黑的方法作了一些探讨。
关键词 SBEMB型 薄膜电磁线 线 发黑 绝缘 电机材料 化学成份
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论SBEMB型薄膜电磁线线芯发黑及其影响
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作者 周新民 《电气牵引》 2003年第1期16-17,共2页
SBEMB线即双玻璃丝包薄膜绕包铜扁线,是大型电机的关键材料之一,它的质量对电机质量有致命影响。但在生产中,常发现其线芯有发黑现象。本文对发黑物的化学成分、发黑原因、对电机的影响及防止发黑的方法作了一些探讨。
关键词 SBEMB型薄膜电磁线 线芯发黑 绝缘材料 米电阻 电机
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Photoluminescence origin of nanocrystalline SiC films 被引量:1
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作者 LIU Ji-wen LI Juan +4 位作者 LI Yan-hui LI Chang-ling ZHAO Yan-ping ZHAO Jie XU Jing-jun 《Optoelectronics Letters》 EI 2005年第2期96-99,共4页
The nanocrystalline SiC films were prepared on Si then annealed at 800℃ and 1 000℃ for 30 minutes (111) substrates by rf magnetron sputtering and in a vacuum annealing system. The crystal structure and crystalliza... The nanocrystalline SiC films were prepared on Si then annealed at 800℃ and 1 000℃ for 30 minutes (111) substrates by rf magnetron sputtering and in a vacuum annealing system. The crystal structure and crystallization of as-annealed SiC films were determined by the Fourier transform infrared (FIR) absorption spectra and the X-ray diffraction (XRD) analysis. Measurement of photoluminescence (PL) of the nanocrystalline SiC (nc-SiC) films shows that the blue light with 473 nm and 477 nm wavelengths emitted at room temperature and that the PL peak shifts to shorter wavelength side and the PL intensity becomes stronger as the annealing temperature decreases. The time-resolved spectrum of the PL at 477 nm exhibits a bi-exponential decay process with lifetimes of 600 ps and 5 ns and a characteristic of the direct band gap. The strong blue light emission with short PL lifetimes suggests that the quantum confinement effect of the SiC nanocrystals resulted in the radiative recombination of the direct optical transitions. 展开更多
关键词 光致发光 纳米晶体 碳化硅薄膜 磁电管喷射 X射线
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