Well known for their good performance,thin film transistors (TFTs) with active layers which were nickel induced laterally crystallized,are fabricated by conventional process of dual gate CMOS.The influence of pre h...Well known for their good performance,thin film transistors (TFTs) with active layers which were nickel induced laterally crystallized,are fabricated by conventional process of dual gate CMOS.The influence of pre high temperature treatment of device fabrication on the performance of TFTs is also investigated.The experiment shows that the high temperature treatment affects the performance of the devices strongly.The best performance is obtained by adopting pre treatment of 1000℃.The mobility of 314cm 2/(V·s) is obtained at NMOS TFTs with pre treatment of 1000℃,which is 10% and 22% higher than that treated at 1100℃ and without pre high temperature treatment,respectively.A maximum on/off current ratio of 3×10 8 is also obtained at 1000℃.Further investigation of uniformity verifies that the result is reliable.展开更多
This paper focused on investigating local tensile strength of connection between steel beam flange and concrete-filled circular column tube with through diaphragm. Three specimens were designed and tested to failure, ...This paper focused on investigating local tensile strength of connection between steel beam flange and concrete-filled circular column tube with through diaphragm. Three specimens were designed and tested to failure, and the structure behavior was studied by experiment and FEM analysis. On the basis of the results obtained, an estimation for local plastic and ultimate strengths of the connections using yield line theory was attempted, which results in a good prediction.展开更多
The geotubes have been widely applied in the engineering of land reclamation from sea. At present three kinds of material can be used to make geotubes: splitting film, fibrillated splitting film and multifilament. The...The geotubes have been widely applied in the engineering of land reclamation from sea. At present three kinds of material can be used to make geotubes: splitting film, fibrillated splitting film and multifilament. The geotubes made of these materials have their advantages and disadvantages. In engineering application to know the rule of forces change is very important. Based on geometry way, limit-filling height of geotubes is determined. Experiment in Pudong International Airport reflects that packing soil height of small-size geotubes will be smaller than that of large-size geotubes.展开更多
The full solution-processed oxide thin-film-transistors(TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, a...The full solution-processed oxide thin-film-transistors(TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, and attracting extensive research interest. However, the performance of the solution-processed TFTs is generally lower than that of the vacuum-deposited ones. In this article, the full-solution processed TFTs with zinc-tin-oxide(ZTO) semiconductor and aluminium(Al_2O_3) dielectrics were fabricated, and their mobilities in the saturation region are high. Besides, the effect of the Al_2O_3 dielectrics' preparation technology on ZTO TFTs' performance was studied. Comparing the ZTO TFTs using the spin-coated Al_2O_3 dielectrics of 1–4 layers, the ZTO TFT with 3-layer Al_2O_3 dielectrics achieved the optimal performance as its field-effect carrier mobility in the saturation region is 112 cm^2/V s, its threshold voltage is 2.4 V, and its on-to-off current ratio is 2.8×105. This is also the highest reported carrier mobility of the solution-processed ZTO TFTs.展开更多
文摘Well known for their good performance,thin film transistors (TFTs) with active layers which were nickel induced laterally crystallized,are fabricated by conventional process of dual gate CMOS.The influence of pre high temperature treatment of device fabrication on the performance of TFTs is also investigated.The experiment shows that the high temperature treatment affects the performance of the devices strongly.The best performance is obtained by adopting pre treatment of 1000℃.The mobility of 314cm 2/(V·s) is obtained at NMOS TFTs with pre treatment of 1000℃,which is 10% and 22% higher than that treated at 1100℃ and without pre high temperature treatment,respectively.A maximum on/off current ratio of 3×10 8 is also obtained at 1000℃.Further investigation of uniformity verifies that the result is reliable.
文摘This paper focused on investigating local tensile strength of connection between steel beam flange and concrete-filled circular column tube with through diaphragm. Three specimens were designed and tested to failure, and the structure behavior was studied by experiment and FEM analysis. On the basis of the results obtained, an estimation for local plastic and ultimate strengths of the connections using yield line theory was attempted, which results in a good prediction.
文摘The geotubes have been widely applied in the engineering of land reclamation from sea. At present three kinds of material can be used to make geotubes: splitting film, fibrillated splitting film and multifilament. The geotubes made of these materials have their advantages and disadvantages. In engineering application to know the rule of forces change is very important. Based on geometry way, limit-filling height of geotubes is determined. Experiment in Pudong International Airport reflects that packing soil height of small-size geotubes will be smaller than that of large-size geotubes.
基金supported by the National Natural Science Foundation of China(Grant No.21161160447)
文摘The full solution-processed oxide thin-film-transistors(TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, and attracting extensive research interest. However, the performance of the solution-processed TFTs is generally lower than that of the vacuum-deposited ones. In this article, the full-solution processed TFTs with zinc-tin-oxide(ZTO) semiconductor and aluminium(Al_2O_3) dielectrics were fabricated, and their mobilities in the saturation region are high. Besides, the effect of the Al_2O_3 dielectrics' preparation technology on ZTO TFTs' performance was studied. Comparing the ZTO TFTs using the spin-coated Al_2O_3 dielectrics of 1–4 layers, the ZTO TFT with 3-layer Al_2O_3 dielectrics achieved the optimal performance as its field-effect carrier mobility in the saturation region is 112 cm^2/V s, its threshold voltage is 2.4 V, and its on-to-off current ratio is 2.8×105. This is also the highest reported carrier mobility of the solution-processed ZTO TFTs.
