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以陶瓷厚膜为绝缘层的红色ZnSvSm,Cl电致发光器件 被引量:6
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作者 唐春玖 朱文清 +4 位作者 赵伟明 刘祖刚 蒋雪茵 张志林 许少鸿 《光学学报》 EI CAS CSCD 北大核心 1999年第10期1430-1432,共3页
报道采用高介电常数的陶瓷厚膜作绝缘层、ZnSvSm , Cl作为发光层的红色薄膜电致发光器件。测量了器件的电致发光光谱和亮度电压曲线, 研究了发光机理和效率电压等特性。制备的器件在市电频率驱动下16 V启亮, 最大亮度为... 报道采用高介电常数的陶瓷厚膜作绝缘层、ZnSvSm , Cl作为发光层的红色薄膜电致发光器件。测量了器件的电致发光光谱和亮度电压曲线, 研究了发光机理和效率电压等特性。制备的器件在市电频率驱动下16 V启亮, 最大亮度为18.4 cd/m 2, 最大效率为0.06 lm /W。 展开更多
关键词 陶瓷厚膜 绝缘层 陶瓷基片 薄致发光器件
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Electroluminescent Excitation Mechanism of Erbium-activated Zinc Sulfide Semiconductor Thin Film Devices
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作者 LIU Zhaohong WANG Yujiang +1 位作者 CHEN Zhenxiang LIU Ruitang(Xiamen University, Xiamen 361005, CHN) 《Semiconductor Photonics and Technology》 CAS 1996年第3期175-179,共5页
The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation l... The electroluminescunce (EL) transient characteristics of erbium-doped zinc sulfide thin film (TF) devices excited by short rectangular pulses are studied, the luminescence delay after de-exciting and the relaxation luminance peaks during decay are observed. A model description for energy transfer has been proposed. The experimental results can be theoretically explained with the computer curve fittings. 展开更多
关键词 Semiconductor Materials Thin Film Devices ELECTROLUMINESCENCE EL Displays
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Effect of BCP ultrathin layer on the performance of organic light-emitting devices
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作者 WANG Hong YU Jun-sheng LI Lu TANG Xiao-qing JIANG Ya-dong 《Optoelectronics Letters》 EI 2008年第5期317-320,共4页
Based on conventional double layer device, triple layer organic light-emitting diodes (OLEDs) with two heterostructures of indium-tin oxide (ITO)/N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'-... Based on conventional double layer device, triple layer organic light-emitting diodes (OLEDs) with two heterostructures of indium-tin oxide (ITO)/N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'-diamine(NPB)/2,9-dimethyl-4,7-diphenyl- 1,10-phenanthroline (BCP)/ 8-Hydroxyquinoline aluminum (Alq3)/Mg:Ag using vacuum deposition method have been fabricated. The influence of different film thickness of BCP layer on the performance of OLEDs has been investigated. The results showed that when the thickness of the BCP layer film gradually varied from 0.1 nm to 4.0 nm, the electrolumines- cence (EL) spectra of the OLEDs shifted from green to greenish-blue to blue, and the BCP layer acted as the recombination region of charge carriers related to EL spectrum, enhancing the brightness and power efficiency. The power efficiency of OLEDs reached as high as 7.3 lm/W. 展开更多
关键词 电致发光器件 超薄层 OLEDS 异质结构
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