弯月薄镜的侧向支撑

弯月薄镜在侧向均匀承重和弯月薄镜在采用侧向均匀承重和等间距竖直推拉侧向支撑方式时,等间距竖直推拉侧向支撑方式时,会产生明显的弯曲变形问题。为消除附加弯矩带来的镜面变形,本文分析了弯月薄镜的结构特点,提出了适用于弯月薄镜的等角间距推一拉一剪切和不等角间距推一拉一剪切两种侧向支撑方式。通过在侧向支撑上增加轴向剪切平衡作用力分量,推导了在上述两种侧向支撑方式下各向作用力分量的表达式。针对1.23 m弯月薄镜,优化出切向分量最佳比率β为0.75。对16点等间距侧向支撑增加轴向剪切分量后,镜面变形RMS值由1259.1nm减小到3.4nm,无需轴向主动校正即可获得较好的支撑面形。不等角间距侧向支撑方式则解决了等间距侧向支撑方式中各个侧向支撑点的作用力大小差异较大的问题,结合弯月薄镜轴向支撑的主动校正能力,在最大校正力仅为-1.01 N的主动校正后,16点不等间距侧向支撑实现了镜面变形RMS为4.6 nm的支撑效果。

弯月薄镜的切向侧支撑设计研究

针对主动光学系统中的φ620mm弯月薄镜设计了双向柔性侧支撑结构,从理论上分析了薄镜切向侧支撑方式的工作原理和支撑力的分布情况,并采用有限元法计算出望远镜指向水平时薄镜所受侧支撑力的大小和方向,验证了受力分析的正确性。通过有限元计算出不同俯仰角下,切向侧支撑方式和轴向主动支撑共同作用时薄镜校正前后的镜面面形的变化情况。当望远镜指向水平时,薄镜镜面变形最大,经过主动校正后的镜面面形误差RMS值为14.1nm,满足设计指标要求。

主动光学薄镜支撑及驱动研究

随着光学遥感器分辨能力的不断提高和口径的不断增大,导致遥感器的重量越来越重,使得载体无法承受。针对此问题,提出了对薄反射镜进行主动支撑的方式,以解决口径大、重量重的问题。利用有限元分析和数学理论相结合的方法在对反射镜施加垂直镜面1g加速度(g=9.80665m/s2为重力加速度)和10℃的温升载荷情况下,对薄反射镜的位移驱动器数量及分布是否合理进行了分析计算,得出了反射镜变形最小时的各促动器的位移量,然后把位移量输入到有限元中相应的节点,计算出了校正后反射镜的面形指标能够达到光学成像要求。具体对Φ500mm、厚3mm的反射镜进行了分析,初步计算的3点和9点支撑的变形值分别为26μm和2.4μm,不能满足系统的成像要求。当运用数学方法计算支撑促动器的间距为72mm时,得出支撑点数为107个,由此再进行有限元分析,得出薄反射镜的面形值,PV值和RMS值分别为119nm和31nm,满足系统的成像要求。分析结果表明,利用数学理论与有限元仿真分析相结合的方法,在薄反射镜变形控制中是可行性的,并为主动光学实验提供了数值依据。

傅里叶望远镜外场实验聚光镜子镜支撑模块的设计

傅里叶望远镜作为一种新兴的光电探测技术,已经成为对深空目标高分辨率成像的首选技术之一。为了推进实际系统的工程化进展,提出了傅里叶望远镜外场实验系统聚光镜子镜支撑模块,串联分级设计了镜面支撑与角度调整机构。子镜底支撑采用圆周均布的3点柔性膜片,可以很好地抵消热变形对面型精度的影响;侧支撑采用中心柔性隔膜定位,6点杠杆重锤承受径向重力载荷;角度调整机构采用3点螺旋传动来实现对子镜室的3自由度调整。有限元分析表明,镜面的PV值为200nm,RMS值为40nm,曲率半径变化<1mm。该设计方法对薄镜面的支撑调整也具有一定的参考价值。

Ф1.2m主镜光学加工中轴向支撑系统的补偿力分析计算

大镜面反射镜在加工过程中需要处理一些低阶的Zernike多项式面形中非旋转对称的面形残余量。这些面型残余量大大增加了加工的难度。提出利用主动支撑技术指导镜面面形的加工过程,降低加工难度。主要研究加工过程中应用主动支撑技术补偿某些低阶Zernike系数面形残差的技术方法。在轴向支撑系统中采用全浮动支撑方式对镜面面形进行控制,采用力作为控制变量的控制模式使镜面产生低阶Zernike多项式面形变化,进一步"修正"处理某些不满足合力为零和合力矩平衡的解,成功实现主动支撑补偿低阶Zernike系数项面形。最后通过Ansys-Workbench软件仿真验证该计算方法的可行性。

Relationship Between Leaf Structure and Aloin Content in Six Species of Aloe L.

The leaf structure, content and the storage location of aloin in the leaves of six species of Aloe L. were studied by means of semi-thin section, high performance liquid chromatography (HPLC) and fluorescent microscope. Results showed that all leaves consisted of epidermis, chlorenchyma, aquiferous tissue and vascular bundles. The leaves had the xeromorphic characteristics, including thickened epidermal cell wall, thickened cuticle, sunken stomata and well-developed aquiferous tissue. With the exception of thus, there were remarkable differences in leaf structure among the six species. The chlorenchyma cells were similar to palisade tissues in Aloe arborescens Mill. and A. mutabilis Pillans, but isodiametric in A. vera L., A. vera L. var. chinensis Berg., A. saponaria Hawer and A. greenii Bali. A. arborescens, A. mutabilis, A. very and A. vera var. chinensis included large parenchymatous cells at the vascular bundles, whereas no such cells were observed at the vascular bundles of A. saponaria and A. greenii. In A. arborescens, A. mutabilis and A. vera, the aquiferous tissue sheaths were present and composed of a layer of small parenchymatous cells without chloroplasts around the aquiferous tissue. While there were no aquiferous tissue sheaths in A. vera var. chinensis, A. saponaria and A. greenii. The HPLC revealed that the content of aloin was high in A. arborescens, low in A. vera, and very low in A. saponaria among the six species. The fluorescent microscopy showed that the yellow-green globule only appeared in the large parenchymatous cells of vascular bundles, vascular bundle sheath and aquiferous tissue sheath, but not in the chlorenchyma and aquiferous tissue. Consequently, the large parenchymatous cells of vascular bundles, vascular bundle sheath and aquiferous tissue sheath were the storage location of aloin. They were positively correlated with the content of aloin.

Unsedated ultrathin upper endoscopy is better than conventional endoscopy in routine outpatient gastroenterology practice:A randomized trial

AIM： to compare the feasibility and patients＇ tolerance of esophagogastroduodenoscopy （EGD） using a thin endoscope with those of conventional oral EGD and to determine the optimal route of introduction of smallcaliber endoscopes. METHODS： One hundred and sixty outpatients referred for diagnostic EGD were randomly allocated to 3 groups： conventional （C）-EGD （9.8 mm in diameter）, transnasal （TN）-EGD and transoral （TO）-EGD （5.9 mm in diameter）. Pre-EGD anxiety was measured using a 100-mm visual analogue scale （VAS）. After EGD, patients and endoscopists completed a questionnaire on the pain, nausea, choking, overall discomfort, and quality of the examination either using VAS or answering some questions. The duration of EGD was timed. Blood oxygen saturation （SaO2） and heart rate （HR） were monitored during EGD. RESULTS： Twenty-one patients refused to participate in the study. The 3 groups were well-matched for age, gender, experience with EGD, and anxiety. EGD was completed in 91.1% （41/45）, 97.5% （40/41）, and 96.2% （51/53） of cases in TN-EGD, TO-EGD, and C-EGD groups, respectively. TN-EGD lasted longer （3.11 ± 1.60 min） than TO-EGD （2.25 ± 1.45 min） and C-EGD （2.49 ± 1.64 rain） （P 〈 0.05）. The overall tolerance was higher （P 〈 0.05） and the overall discomfort was lower （P 〈 0.05） in TN-EGD group than in C-EGD group. EGD was tolerated ＂better than expected＂ in 73.2% of patients in TN-EGD group and 55% and 39.2% of patients in TO-EGD and C-EGD groups, respectively （P 〈 0.05）. Endoscopy was tolerated ＂worst than expected＂ in 4.9% of patients in TN-EGD group and 17.5% and 23.5% of patients in TO- EGD and C-EGD groups, respectively （P 〈 0.05）. TN-EGD caused mild epistaxis in one case, The ability to insuffiate air, wash the lens, and suction of the thin endoscope were lower than those of conventional instrument （P 〈 0,001）, All biopsies performed were adequate for histological assessment. CONCLUSION： Diagnostic TN-EGD is better tolerated than C-EGD, Narrow-diameter endoscope has a level of diagnostic accuracy comparable to that of conventional gastroscope, even though some technical characteristics of these instruments should be improved, Transnasal EGD with narrow-diameter endoscope should be proposed to all patients undergoing diagnostic EGD.

Structural and optical properties of nano-spin coated sol-gel porous TiO_2 films

Three thicknesses of TiO2 films, 174, 195, and 229 nm, were deposited onto quartz substrates by sol–gel spin coating method. The as-deposited thin films were characterized by nano-crystallite with different sizes (19–46 nm) and relatively high porous structure. Optical constants were determined and showed the lowest refractive index of 1.66 for the as-prepared films that ever reported till now. Obtained results were discussed through current theoretical ideas.

Preparation of High Quality Indium Tin Oxide Film on a Microbial Cellulose Membrane Using Radio Frequency Magnetron Sputtering

Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency （RF） magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction （XRD）,scanning electron microscopy （SEM）,atomic force mi-croscopy （AFM）,and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content （O2/Ar,volume ratio） in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 （Ω·sq-1）] and transparent （above 76%） ITO thin films （240 nm thick） were obtained with a moderate sputtering power （about 60 W） and with an oxygen flow rate of 0.25 ml·min-1 （sccm） during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.

Properties of fluoride film and its effect on electroless nickel deposition on magnesium alloys

The physical characteristics and microstructure of the fluoride film formed during activation were investigated using SEM,XPS and SAM,and its stability in electroless nickel(EN) bath was analyzed.The effects of the fluoride film on EN deposition were studied additionally.The results show that the fluoride film on magnesium alloys is a kind of porous film composed of MgF2 with thickness of 1.6-3.2 μm.The composition of the activation bath and pretreatment of EN processing have influence on the composition of the fluoride film.The fluoride is stable and dissolves little in EN bath;as a result,the fluoride film can protect magnesium substrate from the corrosion of EN bath.The composition of fluoride determines the initial deposition of EN and part of the fluoride film finally exists as inclusion in EN coating.

Experimental Study on Mechanical Properties of Micro-Structured Porous Silicon Film

Mechanical properties of micro-structured porous silicon film （PS） were studied combining X-ray diffraction with micro-Raman spectroscopy. The micro-structured porous silicon samples with different porosities ranging from 30.7700 to 96.2500 were obtained by chemical etching. Lattice parameters of the samples were measured using X-ray diffraction and its maximal change is up to （1.000.） This lattice mismatch with the bulk silicon substrate may introduce residual stress to the porous film. The residual stress measurement by micro-Raman spectroscopy reveals that the maximum of tensile residual stress has reached GPa level in the porous film. Moreover, the lattice mismatch and its corresponding residual stress are increasing with the porosity of PS, but average （elastic） modulus is about 14.5 GPa, one order of magnitude lower than that of substrate Si. The mechanical properties of PS have a close relation with its micro-pore structure.

Experimental Study on the Surface Modification of Ultra Thin DLC Films

Surface modification of Diamond-like carbon (DLC) films was carried out in order to estimate the reliability of the ultra thin DLC films. The wear resistance, conductivity and mechatronic reliability of the films were studied by contact atomic force microscope (AFM), electric force microscope (EFM) and conductive AFM. The failure mechanism of pits formed and the reason for conductivity changed of DLC films were examined.

Influence of oxygen partial pressure on properties of N-doped ZnO films deposited by magnetron sputtering

N-doped ZnO films were radio frequency(RF)sputtered on glass substrates and studied as a function of oxygen partial pressure(OPP)ranging from 3.0×10-4 to 9.5×10-3 Pa.X-ray diffraction patters confirmed the polycrystalline nature of the deposited films.The crystalline structure is influenced by the variation of OPP.Atomic force microscopy analysis confirmed the agglomeration of the neighboring spherical grains with a sharp increase of root mean square(RMS)roughness when the OPP is increased above 1.4×10-3 Pa.X-ray photoelectron spectroscopy analysis revealed that the incorporation of N content into the film is decreased with the increase of OPP,noticeably N 1s XPS peaks are hardly identified at 9.5×10-3 Pa.The average visible transmittance(380-700 nm) is increased with the increase of OPP(from～17%to 70%),and the optical absorption edge shifts towards the shorter wavelength.The films deposited with low OPP(≤3.0×10-4 Pa)show n-type conductivity and those deposited with high OPP(≥9.0×10-4 Pa)are highly resistive(>105Ω·cm)

Influence of Tin Doping on the Photocatalytic Activity of Zinc Oxide Thin Films under UV Light

Pure ZnO and Sn-doped ZnO thin films were successfully prepared by the spray pyrolysis method onto glass substrates. The obtained films were characterized by XRD （X-ray diffraction）, SEM （scanning electron microscopy） and ultraviolet-visible spectroscopy. The XRD results showed that the FWHM of Sn-doped ZnO film increased due to the substitution of Sn for Zn, the tin doping within the film causes the ZnO crystallinity to deteriorate. The grains of the film doped with Sn using dibutyltin diacetate were found to be non-uniform distribution through the sample but those appeared to form ganglia-like hills in the case of pure ZnO film. Furthermore, the Sn-doped ZnO films were tested with respect to the photocatalysis in aqueous solutions of MG （malachite green） upon UV-light illumination and in darkness. It was found that Sn-doped ZnO films prepared under specific conditions showed a lower photocatalytic activity than that of pure ZnO films.

Synthesis and Characterization of ZnO Film on Stainless Steel Wire and Bioaerosol Antimicrobial Activity Evaluation

ZnO thin films were prepared by electrophoretic deposition on stainless steel wire sieve, using zinc acetate as a precursor. The film was sintered and characterised by Scanning Electron Microscopy （SEM）, X-Ray Diffraction （XRD） and chemisorption of oxygen. A culture bacterial consortium composed by gram negative rod-shaped microbes was prepared in a liquid agar in a flask. It was transported by air through a reactor equipped with a UV lamp with 3 and 5 sieves of a stainless steel wire coated with ZnO film. It was exposed in continuous in five experiments to photocatalytic advanced oxidation. The experiments showed a total efficiency for colony forming unit reduction of a maximum of 99.66% for a residence time of 20 seconds with 5 stainless steel wire where exposed in continuous to UV. Also they were evaluated at 7.5 seconds, observing that the contribution of residence time and amount of catalytic for the CFU reduction was quite similar. Variance analysis showed that the efficiency was significant with the no parametric Kruskal-Wallis test with P 〈 0.05. This technology could be used to clean indoor air of closed environments such as hospitals, crowded buildings or public transportation systems where airborne bacteria has been documented.

Development of the Atomic Force Microscopy Research Technique for the Nanostructures on the Vertical Edge of Thin Insulating Film

In this work, a development of a method of a thin insulating film vertical edge visualization of metal-insulator-metal （MIM） memory cells with atomic force microscopy （AFM） using a modified Omicron UHV AFM/STM microscope was performed. This included a development of a technique of the AFM visualization of segments of a vertical edge of thin insulator SiO2 film structures on a conductive substrate, a comparison of AFM topography and current profilograms for the edge profiles, and an Omicron microscope custom upgrade. The latter allowed us to perform the AFM probe positioning to any specific area of the sample in the scanning plane by two coordinates with an order of precision of 1 micrometer. The method is illustrated with the experimental results of AFM investigations of the special MIM structures with comb-type topology, and of the cells of functioning memory matrices with 20 nm thin silicon dioxide film open edge perimeter and TiN lower electrode, including topography/current profilograms. As a conclusion, our ongoing work on the AFM visualization of a complete perimeter of a SiO2 open edge of memory cells with a special new topology with a goal to visualize conductive phase nanoparticles during switching processes is briefly overviewed.

Formation and capacitance properties of Ti-Al composite oxide film on aluminum

Al specimens were covered with TiO2 film by sol-gel dip-coating and then anodized in ammonium adipate solution.The structure,composition and capacitance properties of the anodic oxide film were investigated by transmission electron microscopy (TEM),Auger electron spectroscopy (AES),X-ray diffractometry (XRD) and electrochemical impedance spectroscopy (EIS).It was found that an anodic oxide film with a dual-layer structure formed between TiO2 coating and Al substrate.The film consisted of an inner Al2O3 layer and an outer Ti-Al composite oxide layer.The thickness of layers varied with the number of times of sol-gel dip-coating.The capacitance of anodic oxide films formed on coated specimens was at most 80% higher than that without TiO2.In film formation mechanism,it was claimed that the formation of composite oxide film was mainly affected by the structure of micro-pores network in TiO2 coating which had an influence on Al3+ and O2? ions transport during the anodizing.

Scanning Tunneling Microscope Observations of Non-AB Stacking of Graphene on Ni Films

Microscopic features of graphene segregated on Ni films prior to chemical transfer--including atomic structures of monolayers and bilayers, Moire patterns due to non-AB stacking, as well as wrinkles and ripples caused by strain effects-have been characterized in detail by high-resolution scanning tunneling microscopy （STM）. We found that the stacking geometry of the bilayer graphene usually deviates from the traditional Bernal stacking （or so-called AB stacking）, resulting in the formation of a variety of Moir6 patterns. The relative rotations inside the bilayer were then qualitatively deduced from the relationship between Moir6 patterns and carbon lattices. Moreover, we found that typical defects such as wrinkles and ripples tend to evolve around multi-step boundaries of Ni, thus reflecting strong perturbations from substrate corrugations. These investigations of the morphology and the mechanism of formation of wrinkles and ripples are fundamental topics in graphene research. This work is expected to contribute to the exploration of electronic and transport properties of wrinkles and ripples.

Dynamic observation of oxygen vacancies in hafnia layer by in situ transmission electron microscopy

The charge-trapping process, with HfO2 film as the charge-capturing layer, has been investigated by using in situ electron energy-loss spectroscopy and in situ energy-filter image under positive external bias. The results show that oxygen vacancies are non-uniformly distributed throughout the HfO2 trapping layer during the programming process. The distribution of the oxygen vacancies is not the same as that of the reported locations of the trapped electrons, implying that the trapping process is more complex. These bias-induced oxygen defects may affect the device performance characteristics such as the device lifetime. This phenomenon should be considered in the models of trapping processes.

Optoeletronic investigation of Cu2ZnSn(S,Se)4 thin-films ＆ Cu2Zn Sn(S,Se)4/CdS interface with scanning probe microscopy

The kesterite-structured semiconductor Cu_2 Zn Sn(S,Se)_4(CZTSSe) is prepared by spin coating a non-hydrazine precursor and annealing at Se atmosphere. Local electrical and optoelectronic properties of the CZTSSe thin-film are explored by Kelvin probe force microscopy and conductive atomic force microscopy. Before and after irradiation, no marked potential bending and very low current flow are observed at GBs, suggesting that GBs behave as a charge recombination site and an obstacle for charge transport. Furthermore, Cd S nano-islands are synthesized via successive ionic layer adsorption and reaction(SILAR) method on the surface of CZTSSe. By comparing the work function and current flow change of CZTSSe and Cd S in dark and under illumination, we demonstrate photo-induced electrons and holes are separated at the interface of p-n junction and transferred in Cd S and CZTSSe, respectively.