关于薄SiO_2的高场弛豫电导与击穿机制的研究

薄SiO_2的早期高场弛豫电导与原生电子陷阱的俘获及新生正电荷的产生密切相关;中、后期的电导弛豫与新生电子陷阱的产生-俘获过程相关,新生电子陷阱遵从单分子产生规律.一个“新生电子陷阱-新生SiO_2/Si_2O,界面陷阱相关击穿”模型,用以解释薄SiO_2的后期弛豫电导突变失控和不可逆转的失效——脉冲热击穿.

薄栅SiO_2早期电导机制的研究

本文利用恒定电压作用方法,测量硅栅MOS结构高场隧道电流的时间相关特性,研究了薄栅SiO_2的早期电导机制。认为在高场作用下,影响SiO_2电导的主要因素不仅有SiO_2体内阳极附近局域内的新生正电荷和SiO_2体内原生、新生电子陷阱,还应当包括新生界面态;并且,新生正电荷和新生界面态很有可能源于同一种产生物理机制。

甲基化对多孔SiO2增透薄膜光学稳定性能的影响

分别通过引入甲基三乙氧基硅烷(MTES)、二甲基二乙氧基硅烷(DMDES)以及六甲基二硅氮烷(HMDS)组分对SiO2悬胶体进行改性,得到不同甲基化的多孔SiO2改性薄膜。研究了改性薄膜的光学稳定性,抗激光破坏性能以及机械抗擦性能。结果表明,HMDS改性薄膜的光学稳定性最好而机械抗擦性较弱,MTES与DMDES改性薄膜的光学稳定性较低而机械抗擦性良好且均与改性组分的含量有关,甲基化改性薄膜的抗激光破坏性能比未改性薄膜的有所降低。

UV-curing of hyperbranched polyurethane acrylate-polyurethane diacrylate/SiO_2 dispersion and TGA/FTIR study of cured films

UV-curable hyperbranched polyurethane acrylate-polyurethane diacrylate/SiO2 dispersion （HBPUA-PUDA/SiO2） was prepared with isophorone diisocyanate （IPDI）, hyperbranched polyester Boltorn H20 （H20）, hydroxy-ethyl acrylate （HEA）, polyethyleneglycol （PEG-200）and nano-SiO2. The UV curing kinetics of the films was investigated by FTIR. The results show that the curing speed of the films increases with the adding of nano-SiO2 and decreases with the adding of PUDA due to the slower chain movement. The thermal stability of the HBPUA-PUDA/SiO2 films was studied by using thermogravimetric analysis coupled with Fourier transform infrared spectroscopy （TGA/FTIR）. The results show that all films exhibit two degradation stages located at about 320 and 440℃ corresponding to the degradation for hard segments of urethane-acrylate and the degradation for soft segment and polyester core. In addition, the results from the analysis of TGA/FTIR also indicate that the decomposition temperature of HBPUA-PUDA/SiO2 film is 15℃ higher than that obtained for pure polymer. The degradation mechanism was proposed according to TGA/FTIR results.

Transport and electroluminescence mechanism in Au/(Si/SiO_2)/P-Si film

The samples of Au/（Si/SiO2 ）/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the Ⅰ-Ⅴ curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO2 films. The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.

多陷阱相干效应对氧化层电流弛豫谱的影响

本文用单陷阱产生一俘获模型和一级电场因子近似弛豫函数研究了“多陷阱相干效应”对簿栅氧化层电流弛豫谱(OCRS)的影响。给出了高场下、多陷阱共存时,各陷阱OCRS峰并存的条件和峰位、峰值的修正公式。

新一代栅介质材料——高K材料

介绍了微电子工业的发展趋势和Si O2作为CMOS栅介质减薄所带来的问题,从而引出对高K材料的需求,简单介绍了作为栅极介质的各种高介电常数材料的性能的比较及制备高K薄膜的主要方法,总结了一些高K材料的研究现状,论述了目前有待进一步解决的问题,并展望了高K材料的发展趋势。

A Novel Radiation Tolerant SOI Isolation Structure

A novel radiation tolerant SOI isolation structure,consisting of thin SiO2/polysilicon/field SiO2 multilayers,is proposed. A device with this structure does not show obvious changes in subthreshold characteristics and leakage current,indicating a superior radiation tolerance to traditional LOCOS.

Study of colors of diamond-like carbon films

Reflective and transmissive film interference colors were calculated for DLC films on the Si and SiO 2 substrates.The calculated interference colors were compared with photographed colors of the prepared DLC samples.The observed film colors were found to match reasonably well with the corresponding calculated colors,indicating that DLC film colors come from interference instead of color center effects.Color charts for DLC films on the Si and SiO 2 substrates with various optical gaps were constructed,and the relationship between interference color and film properties such as optical gap,thickness and substrate were investigated.Usefulness of the calculated color charts in estimating optical gap or thickness of DLC films were demonstrated.

4H-SiC trench gate MOSFETs with field plate termination

Field plate(FP)-terminated 4H-SiC trench gate MOSFETs are demonstrated in this work.N+/P?/N?/N+multiple epitaxial layers were grown on 3-inch N+type 4H-SiC substrate by chemical vapor deposition(CVD),and then the 4H-SiC trench gate MOSFETs were fabricated based on the standard trench transistor fabrication.Current-voltage measurements in forward and reverse bias have been performed on different devices with and without FP protections.It is found that more than 60%of the devices protected with FP termination are able to block 850 V.The measurements also show that the devices have the small leakage currents 0.15 nA at 600 V and 2.5 nA at 800 V,respectively.The experimental results also were compared with the simulated results,which show good agreement with each other in the trend.The limited performance of the devices is mainly because of the damage induced on the trench sidewalls from the etching process and the quality of the SiO2 films.Therefore,the 4H-SiC trench gate MOSFETs are expected to be optimized by reducing the etching damage and growing high-quality SiO2 dielectric films.

Oxide-on-graphene field effect bio-ready sensors

Electrical detection schemes using nanoscale devices offer fast and label-free alternatives to biosensing techniques based on chemical and optical interactions. Here we report on the design, fabrication, and operation of oxide-on-graphene ion-sensitive field effect sensor arrays using large-area graphene sheets synthesized by chemical vapor deposition. In this scheme, HfO2 and SiO2 thin films are deposited atop the graphene sheet and play the dual role of the sensing interface, as well as the passivation layer protecting the channel and electrodes underneath from direct contact with the electrolyte. We further demonstrate the functionalization of the SiO2 surface with 3-aminopropyltrimethoxysilane （APTMS）. The oxide-on-graphene sensors operate in solution with high stability and a high average mobility of 5,000 cm2/（V＇s）. As a proof of principle, we demonstrate pH sensing using the bare or the APTMS-functionalized SiO2 as the sensing surface. The measured sensitivities, 46 mV/pH and 43 mV/pH, respectively, agree well with existing studies. We further show that by applying the solution gate voltage in pulse, the hysteresis in the transfer curve of the graphene transducer can be eliminated, greatly improving the ionic potential resolution of the sensor. These experiments demonstrate the potential of oxide-on-graphene ion-sensitive field effect sensors in on-chip, label-free and real-time biosensing applications.

Effect of LaNiO_3 Interlayer on the Dielectric Properties of Ba_(0.5)Sr_(0.5)TiO_3 Thin Film on Si Substrate

In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0.5)TiO_3 thin film was strongly affected by the LNO under layer,and the BST thin film deposited on the(100)LNO-coated Si substrate was also found to have a significant(100)-oriented texture.Effects of LNO interlayer on the dielectric properties of BST thin films were investigated.As a result,the tunability of BST thin film was greatly improved with the insertion of(100)-oriented LNO under layer with proper thickness.

Tunable thin-film filter with low angle sensitivity

Conventional angle-tuned thin-film filters have serious angle sensitivity for their low spacer effective refractive index, and it is difficult to fabricate their angle control system. In this paper, we propose and fabricate a novel 100 GHz angletuned thin-film filter stack with low angle sensitivity, which uses the high refractive index material TiO2 as the spacer, and its incident angle can be expanded to 25°. Compared with the traditional Ta2O5-SiO2 thin-film filter stack, the novel stack has fewer layers. Using the polarization beam splitters and the half wave plates, the polarization sensitivity of the angle-tuned filter can also be suppressed. Simulation results and the experiments show that the thin-film filter with low angle sensitivity has an effective tuning range of 33 nm, which can cover the whole C-band, and its angle control system is easy to be fabricated.