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三氟化氮—一种新型干蚀刻气 被引量:1
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作者 A.J.Woytek 康显澄 《低温与特气》 CAS 1985年第3期36-40,共5页
目前,三氟化氯正被研究作为一种半导体干气体蚀刻剂。这是因为它有很高的蚀刻速率和选择性。由于这种气体刚用于电子工业,故本文将对该化合物的物理和化学性质进行评论,并提供管理NF_3的资料,以及检漏和排除泄漏的方法。
关键词 三氟化氮 蚀刻气 物理性质 化学性质 纯度 毒性
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电子气研制国内、外概况及发展趋势
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作者 曾德辉 《低温与特气》 CAS 1986年第2期1-5,16,共6页
大规模和超大规模集成电路研制与生产过程中,需要使用多品种、高质量的特种气体。这些气体统称电子气。
关键词 电子 发展趋势 蚀刻气 高纯氨
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氟化物电子气体
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作者 李连清 《宇航材料工艺》 CAS CSCD 北大核心 2003年第2期38-38,共1页
氟化物电子气体是电子信息材料领域特种电子气体的组成部分,它包括掺杂剂、蚀刻剂和成膜材料,品种多,批量小,技术含量高。生产工艺通常包括粗品制备和深度纯化。 本成果研制的系列产品的生产工艺技术和分析技术有:电解制氟,碳型材料、... 氟化物电子气体是电子信息材料领域特种电子气体的组成部分,它包括掺杂剂、蚀刻剂和成膜材料,品种多,批量小,技术含量高。生产工艺通常包括粗品制备和深度纯化。 本成果研制的系列产品的生产工艺技术和分析技术有:电解制氟,碳型材料、氧化物或金属粉末直接氟化,氟氯碳催化技术,低温蒸馏和精馏;低温吸附分离,真空技术,配气技术,气相色谱分析,离子色谱和化学分析。 展开更多
关键词 氟化物电子 电子信息材料 生产工艺 蚀刻气
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六氟丁二烯的制备技术进展 被引量:8
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作者 毛伟 吕剑 +2 位作者 张伟 杜咏梅 王伟 《化工进展》 EI CAS CSCD 北大核心 2011年第3期627-633,648,共8页
作为一种高效、环保的新型蚀刻气,六氟丁二烯已受到半导体行业的广泛重视。本文介绍了多年来六氟丁二烯合成方法的发展和未来动向。至今,六氟丁二烯的合成方法大部分都是围绕制备四卤六氟丁烷和卤化三氟乙烯基锌两类中间体进行,但从工... 作为一种高效、环保的新型蚀刻气,六氟丁二烯已受到半导体行业的广泛重视。本文介绍了多年来六氟丁二烯合成方法的发展和未来动向。至今,六氟丁二烯的合成方法大部分都是围绕制备四卤六氟丁烷和卤化三氟乙烯基锌两类中间体进行,但从工业化生产的角度来看,目前并没有令人满意的合成路线。最后,通过系统评述各类方法的优缺点,展望了工业规模制备六氟丁二烯的发展前景。 展开更多
关键词 六氟丁二烯 全氟丁二烯 蚀刻气 制备方法
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俄罗斯六氟丁二烯的合成工艺进展 被引量:3
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作者 宋敏彦 吴君毅 《有机氟工业》 CAS 2015年第3期49-51,共3页
六氟丁二烯是一种新型蚀刻气体,介绍了俄罗斯六氟丁二烯的合成工艺。俄罗斯主要以1,2,3,4-四氯六氟丁烷和三氟氯乙烯为原料合成六氟丁二烯,简要介绍了六氟丁二烯在俄罗斯的市场情况。
关键词 六氟丁二烯 合成工艺 俄罗斯 蚀刻气
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Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD
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作者 Z.Khalaj M.Ghoranneviss +2 位作者 S.Nasirilaheghi Z.Ghorannevisb R.Hatakeyama 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2010年第6期689-692,746,共5页
We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550℃ and the reaction pressure of 4 kPa by hot filament chemical va... We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550℃ and the reaction pressure of 4 kPa by hot filament chemical vapor deposition method, in which CH4 and H2 act as a source and diluting gases, respectively. N2, H2, and NH3 were used as the etching gases, respectively. Results show that the optimum conditions can be obtained only for the case of H2 gas. The crystal morphology and crystallinity of the samples have been examined by scanning electron microscopy and X-ray diffraction, respectively. 展开更多
关键词 Nano crystalline diamond Etching gas Hot filament chemical vapor deposition
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Field emission from Si tips coated with nanocrystalline diamond films
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作者 王万录 《Journal of Chongqing University》 CAS 2003年第2期39-42,共4页
The electron field emission from Si tips coated with nanocrystalline diamond films was investigated. The Si tips were formed by plasma etching, and nano-diamond films were deposited on the Si tips by hot filament chem... The electron field emission from Si tips coated with nanocrystalline diamond films was investigated. The Si tips were formed by plasma etching, and nano-diamond films were deposited on the Si tips by hot filament chemical vapor deposition. The radius of curvature for the Si tips was averagely about 50 nm. The microstructure of the diamond films was examined by scanning electron microscopy and Raman spectroscopy. The field emission properties of the samples were measured in an ion-pumped vacuum chamber at a pressure of 106 Pa. The experimental results showed that the nanostructured films on Si tips exhibited a lower value of the turn-on electric field than those on flat Si substrates. It was found that the tip shape and non-diamond phase in the films had a significant effect on the field emission properties of the films. 展开更多
关键词 nanocrystalline diamond field emission Sitips CVD diamond films
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近红外激光诱导InP(100)表面蚀刻反应
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作者 秦启宗 张抗战 《中国激光》 EI CAS CSCD 北大核心 1995年第5期361-365,共5页
采用超声氯分子束和时间分辨质谱研究了由1064nm近红外激光诱导InP(100)表面蚀刻反应的产物质量分,入射Cl_2分子束的平动能效应,激光能量密度和表面温度的影响,并讨论了反应机理。
关键词 激光诱导反应 磷化铟 半导体表面 蚀刻
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The coupling effect of slow-rate mechanical motion on the confined etching process in electrochemical mechanical micromachining 被引量:1
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作者 Lianhuan Han Yuchao Jia +6 位作者 Yongzhi Cao Zhenjiang Hu Xuesen Zhao Shusen Guo Yongda Yan Zhongqun Tian Dongping Zhan 《Science China Chemistry》 SCIE EI CAS CSCD 2018年第6期715-724,共10页
By introducing the mechanical motion into the confined etchant layer technique(CELT), we have developed a promising ultraprecision machining method, termed as electrochemical mechanical micromachining(ECMM), for produ... By introducing the mechanical motion into the confined etchant layer technique(CELT), we have developed a promising ultraprecision machining method, termed as electrochemical mechanical micromachining(ECMM), for producing both regular and irregular three dimensional(3 D) microstructures. It was found that there was a dramatic coupling effect between the confined etching process and the slow-rate mechanical motion because of the concentration distribution of electrogenerated etchant caused by the latter. In this article, the coupling effect was investigated systemically by comparing the etchant diffusion, etching depths and profiles in the non-confined and confined machining modes. A two-dimensional(2 D) numerical simulation model was proposed to analyze the diffusion variations during the ECMM process, which is well verified by the machining experiments. The results showed that, in the confined machining mode, both the machining resolution and the perpendicularity tolerance of side faces were improved effectively. Furthermore, the theoretical modeling and numerical simulations were proved valuable to optimize the technical parameters of the ECMM process. 展开更多
关键词 confined etchant layer technique electrochemical micromachining coupling effect mechanical motion confined etching
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