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聚焦换能器自由场互易校准的冲击响应积分法衍射系数计算 被引量:1
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作者 李丽平 寿文德 +1 位作者 谢志行 夏荣民 《应用声学》 CSCD 北大核心 2003年第6期15-19,5,共6页
在聚焦换能器的会聚球面波自由场互易校准法中,衍射损失修正系数是获得互易常数的一个关键参数.本文利用冲击响应函数积分法系统地计算了超声治疗头、机械扫描B超探头以及多普勒诊断探头的衍射损失系数,得出了一些典型参数下的计算曲线... 在聚焦换能器的会聚球面波自由场互易校准法中,衍射损失修正系数是获得互易常数的一个关键参数.本文利用冲击响应函数积分法系统地计算了超声治疗头、机械扫描B超探头以及多普勒诊断探头的衍射损失系数,得出了一些典型参数下的计算曲线,可供不同类型的聚焦换能器会聚球面波互易校准时引用.与传统的瑞利积分法分析比较显示,本文中所采用的冲击响应函数积分法显著地提高了运算速度,同时基本保持了与瑞利积分算法计算结果的一致性. 展开更多
关键词 聚焦换能器 自由场互易校准法 冲击响应积分法 衍射系数 瑞利积分算法
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自易法测量矩形换能器超声功率研究
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作者 宋仁杰 王亮 +2 位作者 宋丹 罗曼 周小伟 《科技创新与应用》 2024年第11期57-63,共7页
为能够精准且快捷地测量矩形换能器的声功率,探索一种基于自易校准技术测量矩形换能器超声功率的方法。首先利用自易校准方法中的电声互易原理,分析开路电压、第一回波电流与声功率之间的关系,推导出矩形换能器声功率自易测量计算的表达... 为能够精准且快捷地测量矩形换能器的声功率,探索一种基于自易校准技术测量矩形换能器超声功率的方法。首先利用自易校准方法中的电声互易原理,分析开路电压、第一回波电流与声功率之间的关系,推导出矩形换能器声功率自易测量计算的表达式,论述其中衍射系数的计算方法。然后使用自易法和辐射力天平法在不同激励电压下测量2个不同长宽比的矩形换能器,将2种方法所测超声功率分别与电功率、激励电压有效值的平方进行线性拟合,结果取得较好的一致性,并讨论该方法的适用范围。实验证明自易法用于矩形换能器超声功率测量具有可行性。 展开更多
关键词 矩形换能器 自易法 衍射系数 辐射力天平 超声功率测量
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各向异性介质中用几何绕射理论进行衍射快速计算及其应用
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作者 武以立 邓文宇 《云南工业大学学报》 1990年第Z1期104-109,共6页
一、引言迄今用于计算各向异性介质中衍射效应的二个重要方法是抛物线各向异性和菲涅尔近似技术以及波的角谱理论,前者只对波速可很好用抛物线和传播距离足够远使菲涅尔条件得到满足的情形有用,后者对于非抛物线各向异性的普遍情况,是... 一、引言迄今用于计算各向异性介质中衍射效应的二个重要方法是抛物线各向异性和菲涅尔近似技术以及波的角谱理论,前者只对波速可很好用抛物线和传播距离足够远使菲涅尔条件得到满足的情形有用,后者对于非抛物线各向异性的普遍情况,是一个精确的方法但须大量的计算时间。本文介绍任意各向异性介质中衍射计算的另一种方法。此法是由J.B. 展开更多
关键词 各向异性介质 几何绕射理论 快速计算 抛物线 衍射系数 衍射 角谱理论 衍射效应 孔径大小 衍射
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ηc Diffractive Production in the Direct Photon Process
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作者 YANZhan-Yuan DUANChun-Gui LIGuang-Lie 《Communications in Theoretical Physics》 SCIE CAS CSCD 2003年第4X期457-460,共4页
Based on the factorization theorem for lepton induced hard diffractive scattering and color octet heavy quarkonium production mechanism, ηc diffractive production in the direct photon process is studied. The results ... Based on the factorization theorem for lepton induced hard diffractive scattering and color octet heavy quarkonium production mechanism, ηc diffractive production in the direct photon process is studied. The results show that this process can be measured at DESY HERA, and ηc production has different features from J/Ψ production, which is weakly affected by the initial and final state gluon radiation. Therefore, ηc photoproduction can be viewed as reliable estimate. The experimental study of this process can give valuable insight in the co/or octet heavy quarkonium production mechanism. 展开更多
关键词 衍射系数 因数分解理论 色八重态 轻子 真空量子数 衍射散射过程 数值计算 声子衍射
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DEPTH PROFILING OF DEUTERIUM IN Al_2O_3
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作者 谈效华 罗四维 +3 位作者 宋哲明 赖祖武 赵国庆 周筑颖 《Nuclear Science and Techniques》 SCIE CAS CSCD 1995年第3期150-153,共4页
D+2 ions of 70 and 90 keV were separately implanted into two thick samples of sintered alumina ceramic and the distribution of deuterium has been measured for three runs at an interval of 5 months using high energy pr... D+2 ions of 70 and 90 keV were separately implanted into two thick samples of sintered alumina ceramic and the distribution of deuterium has been measured for three runs at an interval of 5 months using high energy proton backscattering and elastic recoil detection (ERD). The measured data show that there is little diffusion of deuterium in A12O3 and the diffusion coefficient is deduced to be 1.1 ×10-17 cm2/s. The measured total concentration of implanted deuterium is 4.5×1018 at./cm2. The profile of hydrogen adsorbed on the surface of Al2O3 samples was also observed by ERD and 1H(19F, αγ)16O analysis. The distribution range of 1H in Al2O3 after deuterium implantation is much larger than that before one. 展开更多
关键词 Depth profiling Diffusion coefficient DEUTERIUM CERAMIC
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Surface wear resistance properties of Ta+N implanted W_(18)Cr_4V high speed steel 被引量:1
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作者 CAO Wei LI Bing-wen +2 位作者 GUO Chu'wen MAO Xin-yuan MA Qin-qin 《Mining Science and Technology》 EI CAS 2009年第1期133-136,共4页
High-speed steel W18Cr4V is commonly used in industries such as blade and mould manufacturers because of its high level of hardness and toughness, M-hardness and resistance, Ion implantation is an effective method to ... High-speed steel W18Cr4V is commonly used in industries such as blade and mould manufacturers because of its high level of hardness and toughness, M-hardness and resistance, Ion implantation is an effective method to improve the wear resistance of W18Cr4V. In our investigation, Ta and Ta+N ion implantation was performed on W18Cr4V high-speed steel. The surface properties after implantation were evaluated by measuring friction coefficients while the cabonyl phase of the surface was analyzed by X-ray diffraction analysis. It was found that the friction coefficients of the treated samples were much lower. Samples implanted with Ta+N had a lower friction coefficients than samples implanted only with Ta. This can be attributed to the formation of a new chemical compound, Fe7Ta3, on both surfaces. An even harder chemical compound, FerN, was formed on both surfaces of Ta+N implanted samples. 展开更多
关键词 ion implantation high speed steel friction coefficient X-ray diffraction
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Molten Salt Synthesis of (K_(0.47)Na_(0.47)Li_(0.06))NbO_3 Lead-Free Piezoelectric Ceramics
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作者 李建华 孙清池 马卫兵 《Transactions of Tianjin University》 EI CAS 2010年第2期152-155,共4页
(K0.47Na0.47Li0.06)NbO3 (KNLN) lead-free ceramics were prepared by molten salt synthesis (MSS) method using k2CO3-Na2CO3 eutectic mixtures as the flux. The microstructure and piezoelectric properties when sintered at ... (K0.47Na0.47Li0.06)NbO3 (KNLN) lead-free ceramics were prepared by molten salt synthesis (MSS) method using k2CO3-Na2CO3 eutectic mixtures as the flux. The microstructure and piezoelectric properties when sintered at 980-1 030 ℃ were investigated. The calcined powders were examined by X-ray diffraction. The microstructure of the calcined powders and sintered bodies was observed using a scanning electron microscope (SEM).The piezoelectric constant d33 was measured using a quasi-static piezoelectric d33 meter. The planar coupling coefficient Kp was calculated by resonance-antiresonance method. The experimental data for each sample's performance indicators were the average values of 8 specimens. The relative densities of sintered specimens are above 97%, and the dielectric loss is below 0.03. It was found that (K0.47Na0.47Li0.06)NbO3 prepared by MSS is compact and lead-free. The piezoelectric constant d33 is 216 pC·N-1 and the planar electromechanical coupling factor Kp is 0.352. 展开更多
关键词 microstructure PIEZOELECTRICITY X-ray diffraction (XRD) MSS method
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Well-posed analysis for a class of Helmholtz equation with periodic coefficients
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作者 冯立新 屈彦呈 《Journal of Harbin Institute of Technology(New Series)》 EI CAS 2005年第3期261-265,共5页
The scattering theory in periodic structures has many applications in modern microoptics and industry. Periodic structures are often referred to as diffraction gratings. In this paper we consider a planar dielectric-l... The scattering theory in periodic structures has many applications in modern microoptics and industry. Periodic structures are often referred to as diffraction gratings. In this paper we consider a planar dielectric-layer modulated grating problem. The diffraction problem may be modeled by a Helmholtz equation with periodic coefficients. Results on existence and uniqueness of the solution for the diffraction problem are obtained by variational method and integral equation method, respectively. At the end of the paper, we also discuss the Born approximation to the solution of an equivalent integral equation. 展开更多
关键词 periodic coefficients Helmholtz equation well-posed analysis
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Crystallographic Parameters and Band Gap of CdSxSe1-x Mixed Crystals
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作者 Abdullah A. Al-Bassam Usamh A. Elani 《Journal of Energy and Power Engineering》 2014年第4期770-774,共5页
Crystals of CdSxSe1-x alloys have been grown from the vapour phase. Some of the physical properties, such as lattice parameters, crystal structure and x-rays data of CdSxSe1-x alloys were determined using x-ray diffra... Crystals of CdSxSe1-x alloys have been grown from the vapour phase. Some of the physical properties, such as lattice parameters, crystal structure and x-rays data of CdSxSe1-x alloys were determined using x-ray diffractometry. X-ray diffractometry has shown that CdS-CdSe mixed crystals had the wurtzite structure for all compositions between CdS and CdSe. The lattice parameters (both a and c) were found to show a linear dependence with composition. The dependence of the lattice parameters of a and c on composition can be expressed as: a(x) = 4.165 + 0.16x; c(x) = 6.713 + 0.27x. The variation of band gap with composition was determined for these samples from optical absorption measurements, which showed that the band gap varied smoothly and monotonically, but not linearly over the composition range typical results were found between 2.42-1.74 eV at room temperature. 展开更多
关键词 Thin films mixed crystals lattice parameter SEMICONDUCTORS devices.
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