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补偿硅的温度敏感特性 被引量:7
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作者 张建 巴维真 +3 位作者 陈朝阳 丛秀云 陶明德 M.K.巴哈迪尔哈诺夫 《电子元件与材料》 CAS CSCD 北大核心 2004年第5期23-24,28,共3页
采用低电阻率的p型单晶硅,在高温条件下扩散金属锰的方法,可以得到高补偿和过补偿硅.在常温下,测试扩散后电阻率分别为3.2×103、4.8×104、1.3×105、3.2×105Ω·cm的几种样品的温度敏感特性,其相应的B值分别为5 ... 采用低电阻率的p型单晶硅,在高温条件下扩散金属锰的方法,可以得到高补偿和过补偿硅.在常温下,测试扩散后电阻率分别为3.2×103、4.8×104、1.3×105、3.2×105Ω·cm的几种样品的温度敏感特性,其相应的B值分别为5 103,5 600,6 103,6 502 K.这种扩锰硅是一种温度敏感材料,笔者将报道这些实验结果并讨论其热敏特性. 展开更多
关键词 补偿硅 补偿 补偿 温敏特性
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高补偿硅的阻-温特性 被引量:6
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作者 张建 巴维真 +3 位作者 陈朝阳 丛秀云 陶明德 M.K.巴哈迪尔哈诺夫 《电子元件与材料》 CAS CSCD 北大核心 2004年第4期19-21,共3页
采用5·cm的p型单晶硅,通过在高温下扩散金属锰的方法,可以得到高补偿硅。笔者选择没有光照下,室温电阻率为5.84×104·cm的样品,进行测量电阻随温度的变化关系(温度从77 K上升到300 K)。测试结果表明:在没有光照条件下测试... 采用5·cm的p型单晶硅,通过在高温下扩散金属锰的方法,可以得到高补偿硅。笔者选择没有光照下,室温电阻率为5.84×104·cm的样品,进行测量电阻随温度的变化关系(温度从77 K上升到300 K)。测试结果表明:在没有光照条件下测试时,电阻随温度的变化同普通的半导体;但在受到光照时,却出现极不相同的情况,这种不同,可能来自所掺杂的硅是一种光敏材料及掺入的杂质是一种深能级杂质。 展开更多
关键词 补偿硅 光敏 深能级
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高补偿硅的光敏感特性 被引量:3
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作者 张建 巴维真 +3 位作者 陈朝阳 丛秀云 陶明德 M.K.巴哈迪尔哈诺夫 《电子元件与材料》 CAS CSCD 北大核心 2004年第3期20-22,共3页
对电阻率为5 ·cm的p型单晶硅,在高温条件下采用扩散金属锰的方法,得到高补偿硅。并在室温(25℃)和液氮温度(196℃)下,测试了这种高补偿硅材料对光强的敏感性。测试结果表明:这种材料是一种光敏感材料,其敏感性受外加的电压、样品... 对电阻率为5 ·cm的p型单晶硅,在高温条件下采用扩散金属锰的方法,得到高补偿硅。并在室温(25℃)和液氮温度(196℃)下,测试了这种高补偿硅材料对光强的敏感性。测试结果表明:这种材料是一种光敏感材料,其敏感性受外加的电压、样品的温度及补偿后样品的电阻率影响。 展开更多
关键词 p型单晶 掺杂锰 补偿硅 光敏感特性
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基于第一性原理研究杂质补偿对硅光电性能的影响
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作者 王秀宇 王涛 +2 位作者 崔雨昂 吴溪广润 王洋 《物理学报》 SCIE EI CAS CSCD 北大核心 2024年第11期263-272,共10页
通过磷(P)和硼(B)共掺杂在硅禁带中构建了P^(+)/B^(-)局域态能级,形成了具有杂质补偿结构的硅.采用基于密度泛函理论框架下的第一性原理研究了杂质补偿硅(n/p-Sic)的电子态密度、介电函数和折射率等光电性能.态密度研究表明,相同浓度P和... 通过磷(P)和硼(B)共掺杂在硅禁带中构建了P^(+)/B^(-)局域态能级,形成了具有杂质补偿结构的硅.采用基于密度泛函理论框架下的第一性原理研究了杂质补偿硅(n/p-Sic)的电子态密度、介电函数和折射率等光电性能.态密度研究表明,相同浓度P和B掺杂(12.5%)的n-Si和p-Si被完全杂质补偿后,费米能级位于两相邻态密度峰构成的谷底,且态密度不为零.在介电函数和折射率研究中,发现n-Sic在掺杂比例C_(B)/C_(P0)=0.25时,在低能区具有最大的介电函数和最大折射率.此外,对比本征硅及其掺杂物的介电常数实部(Re),发现如下规律:在E> 4 eV的高能区,本征Si,n/p-Si和p-Sic的Re为负值;而在0.64 <E <1.50 eV的低能区,n-Sic在掺杂比例C_(B)/C_(P0)=0.25时的Re为负值;这表明在此掺杂比例下n-Sic能在更低的能量下就能获得较好的金属性,从而揭示了其价带电子更易被低能量的长波长光激发.理论研究表明,n-Sic在掺杂比例C_(B)/C_(P0)=0.25时具有较好的光电性能,可能与n-Si被B杂质补偿后部分Si—Si键变成Si—B键的同时产生的Si悬挂键以及在Si禁带中形成的局域态能级有关. 展开更多
关键词 第一性原理 态密度 杂质补偿硅 光学性质
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高补偿单晶硅NTCR镀Ni电极欧姆接触的研究
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作者 崔志明 陈朝阳 +2 位作者 巴维真 蔡志军 丛秀云 《电子元件与材料》 CAS CSCD 北大核心 2006年第3期53-55,共3页
采用4.5Ω.cm的p型单晶硅,通过高温气相扩散法将锰掺入硅中,得到高补偿单晶硅。用化学沉积法,在高补偿单晶硅材料的表面镀金属镍膜,经500℃退火15 min,制成Ni电极。用SEM和XPS对电极进行分析,并测试材料的I-V特性曲线。结果表明:经退火... 采用4.5Ω.cm的p型单晶硅,通过高温气相扩散法将锰掺入硅中,得到高补偿单晶硅。用化学沉积法,在高补偿单晶硅材料的表面镀金属镍膜,经500℃退火15 min,制成Ni电极。用SEM和XPS对电极进行分析,并测试材料的I-V特性曲线。结果表明:经退火后镍与硅形成硅镍化合物(Ni2Si),电极正反向电阻一致,性能稳定,形成欧姆接触。 展开更多
关键词 电子技术 补偿硅 化学沉积法 镍化舍物
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补偿收缩硅粉混凝土在白山水电站的应用
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作者 徐胜国 谢强 《水电工程技术》 2006年第2期33-36,共4页
补偿收缩硅粉混凝土在强度、抗冻性、抗渗性、早强性、抗冲耐磨和抗空蚀性方面与普通混凝土性能相比具有明显的提高,并且可以减少或避免有害的裂缝。通过在白山水电站泄洪消能雾化防护工程中的具体应用,初步摸索出了有关补偿收缩硅粉... 补偿收缩硅粉混凝土在强度、抗冻性、抗渗性、早强性、抗冲耐磨和抗空蚀性方面与普通混凝土性能相比具有明显的提高,并且可以减少或避免有害的裂缝。通过在白山水电站泄洪消能雾化防护工程中的具体应用,初步摸索出了有关补偿收缩硅粉混凝土试验及施工的方法。 展开更多
关键词 膨胀剂 补偿收缩粉混凝土 应用
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A SMART COMPENSATION SYSTEM BASED ON MCA7707 PROCESSOR
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作者 赵敏 姚敏 颜彦 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI 2001年第1期97-101,共5页
This paper presents a smart compensation system based on MCA7707 (a kind of signal processor). The li near errors and high order errors of a sensor (especially piezoresistive sensor) can be corrected by using this s... This paper presents a smart compensation system based on MCA7707 (a kind of signal processor). The li near errors and high order errors of a sensor (especially piezoresistive sensor) can be corrected by using this system. It can optimize the process of piezoresi stive sensor calibration and compensation, then, a total error factor within 0.2 % of the sensor′s repeatability errors is obtained. Data are recorded and coeff icients are determined automatically by this system, thus, the sensor compensati on is simplified greatly. For operating easily, a wizard compensation program is designed to correct every error and to get the optimum compensation. 展开更多
关键词 MCA7707 processor temp erature compensation piezoresistive sensor
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Examination of Silicate Limitation of Primary Production in Jiaozhou Bay, China Ⅱ. Critical Value and Time of Silicate Limitation and Satisfaction of the Phytoplankton Growth 被引量:32
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作者 杨东方 张经 +2 位作者 高振会 陈豫 孙培艳 《Chinese Journal of Oceanology and Limnology》 SCIE CAS CSCD 2003年第1期46-63,共18页
Analysis and comparison of Jiaozhou Bay data collected from May 1991 to February 1994 revealed the spatiotemporal variations of the ambient Si(OH) 4∶NO 3 (Si∶N) concentration ratios and the seasonal variations of (S... Analysis and comparison of Jiaozhou Bay data collected from May 1991 to February 1994 revealed the spatiotemporal variations of the ambient Si(OH) 4∶NO 3 (Si∶N) concentration ratios and the seasonal variations of (Si∶N) ratios in Jiaozhou Bay and showed that the Si∶N ratios were < 1 throughout Jiaozhou Bay in spring, autumn, and winter. These results provide further evidence that silicate limits the growth of phytoplankton (i.e. diatoms) in spring, autumn and winter. Moreover, comparison of the spatiotemporal variations of the Si∶N ratio and primary production in Jiaozhou Bay suggested their close relationship. The spatiotemporal pattern of dissolved silicate matched well that of primary production in Jiaozhou Bay. Along with the environmental change of Jiaozhou Bay in the last thirty years, the N and P concentrations tended to rise, whereas Si concentration showed cyclic seasonal variations. With the variation of nutrient Si limiting the primary production in mind, the authors found that the range of values of primary production is divided into three parts: the basic value of Si limited primary production, the extent of Si limited primary production and the critical value of Si limited primary production, which can be calculated for Jiaozhou Bay by Equations (1), (2) and (3), showing that the time of the critical value of Si limitation of phytoplankton growth in Jiaozhou Bay is around November 3 to November 13 in autumn; and that the time of the critical value of Si satisfaction of phytoplankton growth in Jiaozhou Bay is around May 22 to June 7 in spring. Moreover, the calculated critical value of Si satisfactory for phytoplankton growth is 2.15-0.76 μmol/L and the critical value of Si limitation of phytoplankton growth is 1.42-0.36 μmol/L; so that the time period of Si limitation of phytoplankton growth is around November 13 to May 22 in the next year; the time period of Si satisfactory for phytoplankton growth is around June 7 to November 3. This result also explains why critical values of nutrient silicon affect phytoplankton growth in spring and autumn are different in different waters of Jiaozhou Bay and also indicates how the silicate concentration affects the phytoplankton assemblage structure. The dilution of silicate concentration by seawater exchange affects the growth of phytoplankton so that the primary production of phytoplankton declines outside Jiaozhou Bay earlier than inside Jiaozhou Bay by one and half months. This study showed that Jiaozhou Bay phytoplankton badly need silicon and respond very sensitively and rapidly to the variation of silicon. 展开更多
关键词 PHYTOPLANKTON limitation and satisfaction critical value Jiaozhou Bay
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New resistivity/dopant density model for compensated-Si
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作者 Dominic LEBLANC Karol PUTYERA 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2011年第5期1172-1177,共6页
Models establishing relationships between electrical resistivity and dopant densities of silicon wafers/bricks are not applicable for compensated-Si, such as upgraded metallurgical grade silicon UMG-Si. To date, no sa... Models establishing relationships between electrical resistivity and dopant densities of silicon wafers/bricks are not applicable for compensated-Si, such as upgraded metallurgical grade silicon UMG-Si. To date, no satisfactory theoretical model has been able to explain precisely the variety of new experimental results and observations related to compensated-Si. In this study, a new approach considering equilibrium ionisation constants according to electrolyte theory was proposed, which reproduce, for single-doped Si, Thurber's curves of charge carrier's mobilities. When more than one doping species are involved, as in compensated-Si, a numerical algorithm has to be used for solving multiple equilibrium systems. The study of such systems demonstrates a particular behaviour known from buffered solutions. Equilibrium constants were calculated from thermodynamic properties of chemical compounds, and a new general theory was proposed using available knowledge of electrochemistry (Nernst equation, Butler-Volmer equation). Considering that the silicon/dopant systems constitute a weak electrolyte solid solution, it is concluded that the electrolyte solution theory provides a good physical model and mathematical framework to get a better understanding of solar cell's behaviour. 展开更多
关键词 SILICON RESISTIVITY compensated UMG BORON PHOSPHORUS
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