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针布齿条表面化学沉积Ni-P-SiC复合镀层的耐磨性研究 被引量:2
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作者 林吉曙 《纺织器材》 2004年第1期18-21,共4页
对针布齿条表面化学沉积Ni P SiC复合镀层的耐磨性进行了研究,结果表明:Ni P SiC复合镀层具有弥散强化、沉淀强化和固溶强化三重强化机制;齿条表面Ni P SiC复合镀层可以大幅度提高针布的耐磨性,并有利于对纤维的梳理。
关键词 针布齿条 表面化学沉积 Ni—P—SiC复合镀层 耐磨性 纺织器材
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Investigation on Quick Surface Metallization of Nano Titania Powder
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作者 徐丽娜 周凯常 +4 位作者 刘春平 欧丹林 顾宁 刘举正 陈坤基 《Journal of Southeast University(English Edition)》 EI CAS 2002年第1期92-94,共3页
Quick surface metallization of titania powder was carried out by electrolesschemical deposition of nickel. The fabricated product was characterized by XRD, SEM, FTIR andcross-section metallography. The analysis result... Quick surface metallization of titania powder was carried out by electrolesschemical deposition of nickel. The fabricated product was characterized by XRD, SEM, FTIR andcross-section metallography. The analysis results show that titania particles are completely coatedby a thin nickel shell about 600 nm thick composed of nano-sized crystalline nickel particles.Mechanism of nickel chemical deposition on nano powder is proposed. 展开更多
关键词 electroless chemical deposition nickel methallization nano titania
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Effect of nanofibers at surface of carbon fibers on microstructure of carbon/carbon composites during chemical vapor infiltration 被引量:1
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作者 肖鹏 陈洁 +1 位作者 徐先锋 卢雪峰 《Journal of Central South University》 SCIE EI CAS 2014年第7期2590-2595,共6页
Before densification by chemical vapor infiltration,carbon or SiC nanofibers were grown on the surface of carbon fibers by catalytic chemical vapor deposition using electroplated Ni as catalyst.The modification and me... Before densification by chemical vapor infiltration,carbon or SiC nanofibers were grown on the surface of carbon fibers by catalytic chemical vapor deposition using electroplated Ni as catalyst.The modification and mechanism of nanofibers on the pyrocarbon deposition during chemical vapor infiltration were investigated.The results show that the nanofibers improve the surface activity of the carbon fibers and become active nucleation centers during chemical vapor infiltration.They can induce the ordered deposition of pyrocarbon and adjust the interface bonding between pyrocarbon and carbon fibers during the infiltration. 展开更多
关键词 carbon nanofiber SiC nanofiber PYROCARBON interface bonding
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Laser Processing Mechanism of Monocrystalline Diamond
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作者 Etsuji Ohmura Katsuko Harano +1 位作者 Kenichi Watatani Keiji Ebata 《Journal of Mechanics Engineering and Automation》 2011年第3期191-199,共9页
When a Nd:YAG laser, the wavelength of which is permeable for diamond, is focused on the surface of a diamond sample, a layer of surface material is ablated. Therefore, diamond can be cut by repetitive irradiation. I... When a Nd:YAG laser, the wavelength of which is permeable for diamond, is focused on the surface of a diamond sample, a layer of surface material is ablated. Therefore, diamond can be cut by repetitive irradiation. In this study, the processing mechanism of ablation for a single crystal diamond was examined using a heat conduction analysis, considering laser absorption at the surface or the temperature dependence of absorption coefficient. When the laser beam is absorbed at the surface layer, the surface layer is ablated during an early period in the laser pulse. Once the absorption surface layer is ablated, the laser beam penetrates the base material and ablation stops. On the other hand, if the authors assume that single crystal diamond has the temperature dependence of absorption coefficient which is about equal to that of CVD (chemical vapor deposition) diamond, the temperature rise is not enough to ablate the material. However, it became clear that the diamond is ablated deeply when the authors consider both absorption at the surface layer and the temperature dependence of the absorption coefficient. It can be considered that the surface is transformed to graphite and becomes the absorption layer during the repetitive irradiation. It is estimated that the phase change to graphite is very small and its volume fraction is a few percent at most. 展开更多
关键词 Laser ablation laser cutting single crystal diamond absorption layer absorption coefficient heat conduction analysis
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Fabrication of superhydrophilic surface on copper substrate by electrochemical deposition and sintering process
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作者 刘侨鹏 汤勇 +2 位作者 罗文杰 付婷 袁伟 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2015年第7期1200-1205,共6页
Superhydrophilic surfaces were fabricated on copper substrates by an electrochemical deposition and sintering process. Superhydrophobic surfaces were prepared by constructing micro/nano-structure on copper substrates ... Superhydrophilic surfaces were fabricated on copper substrates by an electrochemical deposition and sintering process. Superhydrophobic surfaces were prepared by constructing micro/nano-structure on copper substrates through an electrochemical deposition method. Conversion from superhydrophobic to superhydrophilic was obtained via a suitable sintering process. After reduction sintering, the contact angle of the superhydrophilic surfaces changed from 155° to 0°. The scanning electron microscope (SEM) images show that the morphology of superhydrophobic and superhydrophilic surfaces looks like corals and cells respectively. The chemical composition and crystal structure of these surfaces were examined using energy dispersive spectrometry (EDS) and X-ray diffraction (XRD). The results show that the main components on superhydrophobic surfaces are Cu, Cu2O and CuO, while the superhydrophilic surfaces are composed of Cu merely. The crystal structure is more inerratic and the grain size becomes bigger after the sintering. The interracial strength of the superhydrophilic surfaces was investigated, showing that the interfacial strength between superhydrophilic layer and copper substrate is considerably high. 展开更多
关键词 Superhydrophilic Superhydrophobic Copper surface Electrochemical deposition Sintering process
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Effect of pyrolysis temperature on properties of ACF/CNT composites
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作者 王丽平 黄柱成 +1 位作者 张明瑜 廖兴盛 《Journal of Central South University》 SCIE EI CAS 2012年第10期2746-2750,共5页
Activated carbon fiber/carbon nanotube(ACF/CNT) composites were fabricated by chemical vapor deposition(CVD) process.The effects of pyrolysis temperature on properties of ACF/CNT composites,including BET specific surf... Activated carbon fiber/carbon nanotube(ACF/CNT) composites were fabricated by chemical vapor deposition(CVD) process.The effects of pyrolysis temperature on properties of ACF/CNT composites,including BET specific surface area,mass increment rate and adsorption efficiency for rhodamine B in solution,were investigated by scanning electron microscopy.The results show that the pyrolysis temperature is a key factor affecting the qualities of ACF/CNT composites.The mass increment rate and BET specific surface area sharply decrease with the increase of pyrolysis temperatures from 550 ℃ to 850 ℃ and the minimum diameter of CNTs appears at 750 ℃.The maximum adsorption efficiency of ACF/CNT composites for rhodamine B is obtained at 650 ℃.ACF/CNT composites are expected to be useful in adsorption field. 展开更多
关键词 ACF/CNT composites pyrolysis temperature chemical vapor deposition BET specific surface area ADSORPTION
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Investigation of surface morphology and ion activation of aluminium implanted 4H-SiC 被引量:3
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作者 SONG QingWen ZHANG YuMing +1 位作者 ZHANG YiMen TANG XiaoYan 《Science China(Technological Sciences)》 SCIE EI CAS 2012年第12期3401-3404,共4页
Multiple-energy aluminium (AI+) implantation into 4H-SiC (0001) epilayer and activation anneal with a graphite encapsnlation layer were investigated in this paper. Measurements showed that the implanted Ak+ box ... Multiple-energy aluminium (AI+) implantation into 4H-SiC (0001) epilayer and activation anneal with a graphite encapsnlation layer were investigated in this paper. Measurements showed that the implanted Ak+ box doping profile was formed and a high ion activation ratio of 78% was achieved by 40 rain annealing at 1600℃ using a horizontal chemical vapor deposition (CVD) reactor. The step bunching effect associated with the high temper:lture post implantation activation annealing (PIA) process was dramatically suppressed by using the graphite encapsulation layer. And a flat and smooth surface with a small average surface roughness (RMS) value of around 1.16 nm was achieved for the implanted 4H-SiC after the PIA process. It was demonstrated that this surface protection technique is a quite effective process for 4H-SiC power devices fabrication. 展开更多
关键词 4H-SIC Al+ implantation activation anneal surtaee morphology
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A n-Si/CoOx/Ni:CoOOH photoanode producing 600 mV photovoltage for efficient photoelectrochemical water splitting 被引量:2
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作者 Zhuocheng Yin Yuchuan Shi Shaohua Shen 《Science China Materials》 SCIE EI CAS CSCD 2022年第12期3442-3451,共10页
n-Si,believed as a promising photoanode candidate,has suffered from sluggish oxygen evolution reaction(OER)kinetics and poor chemical stability when exposed to aqueous electrolyte.Herein,CoO_(x)/Ni:CoOOH bilayers were... n-Si,believed as a promising photoanode candidate,has suffered from sluggish oxygen evolution reaction(OER)kinetics and poor chemical stability when exposed to aqueous electrolyte.Herein,CoO_(x)/Ni:CoOOH bilayers were successfully deposited on n-Si substrate by atomic layer-deposition(ALD)and photoassisted electrochemical deposition(PED)for stabilizing and catalyzing photoelectrochemical(PEC)water oxidation.In comparison to the n-Si/CoO_(x)photoanode as reference,the prepared n-Si/CoO_(x)/Ni:CoOOH photoanode upon the optimized PED process presents a much improved PEC performance for water splitting,with the onset potential cathodically shifted to~1.03 V vs.reversible hydrogen electrode(RHE)and the photocurrent density much increased to 20 mA cm^(−2)at 1.23 V vs.RHE.It is revealed that the introduction of Ni dopants increases the work functions of the deposited Ni:CoOOH overlayers,which gives rise to the upward band bending weakened at the n-Si/CoO_(x)/Ni:CoOOH cascading interface while strengthened at the Ni:CoOOH/electrolyte interface(with the band bending shifted from downward to upward),contributing to the decreased and the increased driving forces for charge transfer at the interfaces,respectively.Then,the balanced driving forces at the interfaces would endow the n-Si/CoO_(x)/Ni:CoOOH photoanode with the best PEC performance.Moreover,PED has been evidenced superior to ED to dope Ni into CoOOH with the formed overlayer effectively catalyzing and stabilizing PEC water splitting. 展开更多
关键词 n-Si PHOTOANODE work function photoelectrochemical water splitting
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A new sediment type of coated grain: Oolitic sinter 被引量:1
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作者 WU ChiHua YI HaiSheng +2 位作者 HUI Bo XIA GuoQing MA Xue 《Science China Earth Sciences》 SCIE EI CAS 2014年第9期2013-2024,共12页
As a special sedimentary grain type, the coated grain(with an ooid model) has been known for two centuries due to its fascinating special fabric and genesis developments. The leading factors in forming the coated grai... As a special sedimentary grain type, the coated grain(with an ooid model) has been known for two centuries due to its fascinating special fabric and genesis developments. The leading factors in forming the coated grain consist mainly of:(1) microorganism movement field;(2) chemical sedimentary effect;(3) hydrodynamic force environment and topography condition;(4) abundant core material supply;(5) embedding condition; and(6) humic acids condition in water medium. With the development of the coated grain genesis, the single factor theory cannot reasonably explain the exact formation of the surface sediment of coated grain. Here, we find a new way to study the coated grain on the basis of traditional research methods. The Wenquan area on the northeast edge of the Qiangtang Basin is one of the few areas where the coated grain is developing, and is a rare "natural laboratory" for the study of the coated grain and the thermal spring sediment. The oolitic sinter of the area has the triaxiality modality of pea polymer, and is obviously different from the karst travertine and the normal lacustrine ooid. We found that the hot spring water in the Wenquan area has higher partial pressure of CO2(PCO2) and saturation index of the calcite(SIc) than normal. Macrocosmically, the oolitic sinter is shaped like a pea, and its grains and gap fillings are light yellow. Microcosmically, the sinter grain forms six types of fundamental lamina, and those six types are developed to be four grain types with different combinations. The C-axis of the mineral grain of sinter cement(calcite) is normal to the lamina face, and grows on it with distinct generation formations. In short, the grain type of oolitic sinter is the oncoid, with the grain development caused by the factors such as the shallow water of strong hydrodynamic force, the special hydrochemistry condition, and the extensive algae activities(diatom). 展开更多
关键词 Qiangtang Basin Wenquan graben oolitic sinter coated grain oncoid
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Study on PECVD SiO_2 /Si_3 N_4 double-layer electrets with different thicknesses 被引量:1
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作者 ZOU XuDong ZHANG JinWen 《Science China(Technological Sciences)》 SCIE EI CAS 2011年第8期2123-2129,共7页
In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliabi... In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliability in high humidity environment. Samples with different thicknesses of Si 3 N 4 and SiO 2 were prepared on Pyrex 7740 glass substrates and characterized by isothermal and high humidity charge decay. The results of experiment approved that the PECVD SiO 2 /Si 3 N 4 double layers electrets on glass substrate has as good chargeability and charge stability in high temperature and high humidity environment as thermal oxidation or APCVD/LPCVD ones on silicon substrates. The experiment results indicated that a Si 3 N 4 layer no less than 50 nm is necessary for good charge stability in high temperature and a Si 3 N 4 layer thicker than 500 nm decreases the chargeability. Even a 2 nm Si 3 N 4 layer is enough to significantly improve the charge stability in high humidity environment. Thick SiO 2 layer can increase the surface potential of electrets under the same charging condition and its charge stability in high temperature. However, the electrets with high surface potential also exhibit poor uniformity of charge stability in high humidity environment. 展开更多
关键词 PECVD SiO 2 /Si 3 N 4 double layer ELECTRETS thicknesses
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Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires
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作者 Dongdong Li Liang Zhao +2 位作者 Ruqian Wu Carsten Ronning G. Lu 《Nano Research》 SCIE CAS CSCD 2011年第11期1110-1116,共7页
Ga-doped ZnO nanowires have been synthesized by a pulsed laser chemical vapor deposition method. The crystal structure and photoluminescence spectra indicate that the dopant atoms are well integrated into the ZnO wurt... Ga-doped ZnO nanowires have been synthesized by a pulsed laser chemical vapor deposition method. The crystal structure and photoluminescence spectra indicate that the dopant atoms are well integrated into the ZnO wurtzite lattice. The photocurrent properties at different temperatures have been systematically investigated for nanowires configured as a three-terminal device. Among the experimental highlights, a pronounced semiconductor-to-metal transition occurs upon UV band-to-band excitation. This is a consequence of the reduction in electron mobility arising from the drastically enhanced Coulomb interactions and surface scattering. Another feature is the reproducible presence of two resistance valleys at 220 and 320 K upon light irradiation. This phenomenon originates from the trapping and detrapping processes in the impurity band arising from the native defects as well as the extrinsic Ga dopants. This work demonstrates that due to the dimensional confinement in quasi-one-dimensional structures, enhanced Coulomb interaction, surface scattering, and impurity states can significantly influence charge transport. 展开更多
关键词 ZnO NANOWIRE DOPING semiconductor-to-metal transition PHOTOCONDUCTANCE impurity states
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